CN102692280A - Ntc temperature sensor chip electrode structure - Google Patents
Ntc temperature sensor chip electrode structure Download PDFInfo
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- CN102692280A CN102692280A CN2011100715000A CN201110071500A CN102692280A CN 102692280 A CN102692280 A CN 102692280A CN 2011100715000 A CN2011100715000 A CN 2011100715000A CN 201110071500 A CN201110071500 A CN 201110071500A CN 102692280 A CN102692280 A CN 102692280A
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Abstract
Disclosed in the invention is an NTC temperature sensor chip electrode structure, comprising a chip and an electrode film layer. Besides, a transition layer or two transition layers is/are arranged between the chip and the electrode film layer. The NTC temperature sensor chip electrode structure with high density and resistance precision as well as uniform thickness is not influenced by an application environment condition and ion electrode migration does not occur, thereby substantially improving reliability and stability of the temperature sensor performance.
Description
Technical field
The present invention relates to a kind of NTC temperature sensor production structure design.
Background technology
Thermometer is the parameter that often needs test in the practical application, is fabricated onto semiconductor production from iron and steel, and a lot of processing procedures all will rely on the measurement of temperature to realize, so temperature sensor is the bridge between application system and the real world.The measurement of temperature is used very extensive; Not only procedure for producing needs temperature control; Some electronic product also needs they self temperature is measured, and wants the temperature of monitoring CPU like computing machine, and motor controller will be known temperature of power drive IC or the like; And the sensor kind that is used for measuring temperature is a lot, and thermal resistor is exactly one of them.Many thermistors have negative temperature coefficient (NTC), that is to say that its resistance value can raise when temperature descended.In all passive type temperature sensors, the sensitivity of thermistor (be the every variation of temperature once time changes in resistance) is the highest, is that industry institute generally adopts by thermistor as temperature sensor therefore.
NTC themistor has high sensitivity and lower price, so suitable to especially temperature sensor.In-55 ℃～+ 300 ℃ temperature range; With NTC themistor or NTC thermistor chip temperature sensor as core parts---be called for short the NTC temperature sensor; Obtain widespread usage in fields such as industrial automation, instrument and meter, automotive electronics, medical electronics, household electrical appliance, space flight and aviation, computing machines, only household electrical appliance just have: domestic air conditioning, refrigerator, refrigerator, water heater, water dispenser, warm-air drier, dish-washing machine, disinfection cabinet, washing machine, dryer, oven, electromagnetic oven, soy bean milk making machine, toaster, charger for mobile phone, charger for electric bicycle, rechargeable battery, Electronic desk calendar etc.
This NTC temperature sensor adopts NTC themistor or NTC themistor chip as core parts, can make all styles of according to the difference of its purposes.The sensing head structural difference that the main difference of existing various NTC temperature sensors is to be enclosed with NTC themistor or NTC themistor chip is very big; But no matter contour structures has great difference; Its extension line overwhelming majority all is PVC or resistant to elevated temperatures Teflon insulated conductor; Thermal resistor chip electrode structure is generally printed one deck electrode film at chip surface, like the Ag electrode film.The environmental baseline that this series products is used (humidity and corrosive gas) influence, the Electrode Ag ion moves, and causes properties of product to worsen, and reliability and stability descend.
Summary of the invention
The present invention provides a kind of have higher density and resistance accuracy; The uniform NTC temperature sensor chip of thick book electrode structure; The environmental influence that this NTC temperature sensor chip electrode structure is not used; The electrode ion does not move, and greatly improves the reliability and stability of temperature sensor performance.
The present invention realizes through following technical scheme:
NTC temperature sensor chip electrode structure comprises chip and electrode thin film layer, also is provided with transition bed between described chip and the electrode thin film layer, and described transition bed is one deck or two-layer.
Described transition bed is two-layer, and the transition bed of described next-door neighbour's chip is the chromium thin film layer, and the transition bed of described next-door neighbour's electrode thin film layer is a copper film layer
Described one deck or two-layer transition bed and electrode thin film layer are that chip is placed the magnetron sputtering apparatus vacuum chamber, adopt quality purity be 99.99% different metal as target, magnetron sputtering deposition forms.
A kind of NTC temperature sensor chip of the present invention electrode structure; Comprise chip and electrode thin film layer; Also be provided with transition bed between described chip and the electrode thin film layer, described transition bed forms through magnetron sputtering deposition, has higher density and resistance accuracy; Thick book is even, greatly improves the reliability and stability of temperature sensor performance.
Beneficial effect of the present invention: the thick book of electrode film is even, and density is high, has greatly improved the product resistance accuracy.
Description of drawings
Fig. 1 implements 1 structural representation for the present invention.
Fig. 2 implements 2 structural representation for the present invention.
Sequence number among the figure: 1, chip, 2, electrode thin film layer, 3, transition bed.
Embodiment
Below in conjunction with accompanying drawing and embodiment the present invention is described further.
Implement 1: according to shown in Figure 1, a kind of NTC temperature sensor chip electrode structure comprises chip 1, transition bed 3 and electrode thin film layer 2; Described transition bed 3 is two-layer; Described NTC temperature sensor chip 1 is a semiconductor sensitive ceramic substrate, and described electrode thin film layer 2 is the gold thin film layer, and the transition bed 3 of described next-door neighbour's chip 1 is the chromium thin film layer; The transition bed 3 of described next-door neighbour's electrode thin film layer 2 is a copper film layer; Described chromium thin film layer and copper film layer transition bed 3 and electrode thin film layer 2 are that chip 1 is placed the magnetron sputtering apparatus vacuum chamber, adopt successively quality purity be 99.99% crome metal, copper and gold as target, magnetron sputtering deposition forms.Thickness of electrode of the present invention 0.8 μ m, and density is high, and thick book is even, and < ± 10%, the product resistance accuracy is brought up to 0.5%--1% to error.The environmental baseline that electrode thin film layer is not used (humidity and corrosive gas) influence, the electrode ion does not move, the reliability and stability of greatly enhancing product performance.
Implement 2: according to shown in Figure 2; A kind of NTC temperature sensor chip electrode structure; Comprise chip 1, transition bed 3 and electrode thin film layer 2, described NTC temperature sensor chip 1 is a semiconductor sensitive ceramic substrate, and described electrode thin film layer 2 is the gold thin film layer; Described transition bed 3 is the chromium thin film layer; Described chromium thin film layer and electrode thin film layer 2 are that chip 1 is placed the magnetron sputtering apparatus vacuum chamber, to adopt quality purity successively be 99.99% crome metal with gold as target, magnetron sputtering deposition forms.
Embodiment is just for the ease of understanding technical scheme of the present invention; Do not constitute restriction to protection domain of the present invention; Every interior any simple modification, equivalent variations and modification of perhaps according to technical spirit of the present invention above scheme being done that does not break away from technical scheme of the present invention all still belongs within the protection domain of the present invention.
Claims (3)
1.NTC the temperature sensor chip electrode structure comprises chip ⑴ and electrode thin film layer ⑵, it is characterized in that: also be provided with transition bed ⑶ between described chip ⑴ and the electrode thin film layer ⑵, described transition bed ⑶ is one deck or two-layer.
2. NTC temperature sensor chip electrode structure according to claim 1; It is characterized in that: described transition bed ⑶ is two-layer; The transition bed ⑶ of described next-door neighbour's chip ⑴ is the chromium thin film layer, and the transition bed ⑶ of described next-door neighbour's electrode thin film layer ⑵ is a copper film layer.
3. NTC temperature sensor chip electrode structure according to claim 1 and 2; It is characterized in that: described one deck or two-layer transition bed ⑶ and electrode thin film layer ⑵ place the magnetron sputtering apparatus vacuum chamber with chip ⑴; Adopt quality purity be 99.99% different metal as target, magnetron sputtering deposition forms.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011100715000A CN102692280A (en) | 2011-03-24 | 2011-03-24 | Ntc temperature sensor chip electrode structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011100715000A CN102692280A (en) | 2011-03-24 | 2011-03-24 | Ntc temperature sensor chip electrode structure |
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| CN102692280A true CN102692280A (en) | 2012-09-26 |
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| CN2011100715000A Pending CN102692280A (en) | 2011-03-24 | 2011-03-24 | Ntc temperature sensor chip electrode structure |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4712085A (en) * | 1984-10-30 | 1987-12-08 | Tdk Corporation | Thermistor element and method of manufacturing the same |
| JPH03131001A (en) * | 1989-10-17 | 1991-06-04 | Tama Electric Co Ltd | Resistance temperature sensor |
| CN1367497A (en) * | 2001-01-26 | 2002-09-04 | 奠基石传感器公司 | Thermistor and its production method |
| CN101393942A (en) * | 2008-11-05 | 2009-03-25 | 南京航空航天大学 | Polycrystalline-silicon carbide lamination thin-film solar cell |
| CN101635203A (en) * | 2008-07-27 | 2010-01-27 | 比亚迪股份有限公司 | Semiconductor electrode, manufacture method thereof and solar cell containing same |
-
2011
- 2011-03-24 CN CN2011100715000A patent/CN102692280A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4712085A (en) * | 1984-10-30 | 1987-12-08 | Tdk Corporation | Thermistor element and method of manufacturing the same |
| JPH03131001A (en) * | 1989-10-17 | 1991-06-04 | Tama Electric Co Ltd | Resistance temperature sensor |
| CN1367497A (en) * | 2001-01-26 | 2002-09-04 | 奠基石传感器公司 | Thermistor and its production method |
| CN101635203A (en) * | 2008-07-27 | 2010-01-27 | 比亚迪股份有限公司 | Semiconductor electrode, manufacture method thereof and solar cell containing same |
| CN101393942A (en) * | 2008-11-05 | 2009-03-25 | 南京航空航天大学 | Polycrystalline-silicon carbide lamination thin-film solar cell |
Non-Patent Citations (1)
| Title |
|---|
| 肖虹: "片状NTC热敏电阻的发展动向与可靠性", 《电子产品可靠性与环境试验》, no. 3, 31 March 1996 (1996-03-31), pages 62 - 64 * |
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Application publication date: 20120926 |