JPS5515285A - Forming method for indium-antimony thin film - Google Patents
Forming method for indium-antimony thin filmInfo
- Publication number
- JPS5515285A JPS5515285A JP8906378A JP8906378A JPS5515285A JP S5515285 A JPS5515285 A JP S5515285A JP 8906378 A JP8906378 A JP 8906378A JP 8906378 A JP8906378 A JP 8906378A JP S5515285 A JPS5515285 A JP S5515285A
- Authority
- JP
- Japan
- Prior art keywords
- film
- thin film
- vaccum
- heat treatment
- vaporation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title abstract 8
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 title abstract 3
- 238000000034 method Methods 0.000 title abstract 3
- 239000010408 film Substances 0.000 abstract 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 238000010438 heat treatment Methods 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910018054 Ni-Cu Inorganic materials 0.000 abstract 1
- 229910018481 Ni—Cu Inorganic materials 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 230000027756 respiratory electron transport chain Effects 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Landscapes
- Hall/Mr Elements (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
PURPOSE: To permit an application to a magnetic electric conversion element of a thin film having a nature different from that of a single crystal bulk, by bonding an impurity atom or its ion on a substrate for thin film formation, thereafter placing a InSb thin film thereon and by causing the thin film to recrystlize by a heat treatment.
CONSTITUTION: A very slight amount of a Sn layer 2 is mounted by a vaccum vaporation or a spatter method on a thin film forming substrate 1 and a InSb thin film 3 is formed by the vaccum vaporation method thereon. Successively, In order to prevent an oxidization in the heat treatment and an evenness in the thickness at the recrystlization time, the film 2 is covered with a SiO2 film 4, it is heated in the Ar gas atmosphere over 55°C, to obtain the recystalization of the film 3. Whereby the IsSb thin film including Sn can be obtained, a hole element is pattern etched in an appropriate shape, an opening is given to the film 4 and a Ni-Cu electrode film 5 adjacent to the film 3 is extended on the film 4 and bonded thereto. Thereafter, an electorde 6 is soldered to the above film. This hole element has an excellent electron transfer rate, magnetic sensibility and input/output resistance.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8906378A JPS5515285A (en) | 1978-07-20 | 1978-07-20 | Forming method for indium-antimony thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8906378A JPS5515285A (en) | 1978-07-20 | 1978-07-20 | Forming method for indium-antimony thin film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5515285A true JPS5515285A (en) | 1980-02-02 |
Family
ID=13960388
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8906378A Pending JPS5515285A (en) | 1978-07-20 | 1978-07-20 | Forming method for indium-antimony thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5515285A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59137218U (en) * | 1983-03-07 | 1984-09-13 | 昭和電工建材株式会社 | Transfer equipment for uncured molded products |
-
1978
- 1978-07-20 JP JP8906378A patent/JPS5515285A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59137218U (en) * | 1983-03-07 | 1984-09-13 | 昭和電工建材株式会社 | Transfer equipment for uncured molded products |
| JPS638671Y2 (en) * | 1983-03-07 | 1988-03-15 |
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