JPS558036A - Electrode formation - Google Patents

Electrode formation

Info

Publication number
JPS558036A
JPS558036A JP8012278A JP8012278A JPS558036A JP S558036 A JPS558036 A JP S558036A JP 8012278 A JP8012278 A JP 8012278A JP 8012278 A JP8012278 A JP 8012278A JP S558036 A JPS558036 A JP S558036A
Authority
JP
Japan
Prior art keywords
substrate
thin film
metallic electrode
electrode layers
low
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8012278A
Other languages
Japanese (ja)
Inventor
Yoshinari Matsumoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP8012278A priority Critical patent/JPS558036A/en
Publication of JPS558036A publication Critical patent/JPS558036A/en
Pending legal-status Critical Current

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  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: For developing a high reproducibility in obtaining low-resistance (low ohm value) electrodes, to make heat-treatment by using such thin film as to prevent the evaporation of the readily volatile element in compound semiconductor material when forming an electrode in said semiconductor material.
CONSTITUTION: A metallic electrode layer 12 is deposited on one side of a compound semiconductor substrate 11 made of InP for example by an ordinary method, and a metallic electrode layer 13 on the reverse side of said substrate 11 by a similar method. Next, CVD method for example is used for forming on the both sides of said substrate 11 on which said electrode layers 12 and 13 are formed, the thin film 14 of SiO2 and Si3N4 for example of which the rate of the reaction with said metallic electrode layers 12 and 13 is 0 or low at heat treatment temperature and which are not or hardly permeable to the component elements of said substrate 11 such as P and the component elements of said metallic electrode layers 12 and 13 for example. Thereafter, heat-treatment is made in forcing gas or H2 gas, and next said thin film 14 is removed with buffer for example.
COPYRIGHT: (C)1980,JPO&Japio
JP8012278A 1978-06-30 1978-06-30 Electrode formation Pending JPS558036A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8012278A JPS558036A (en) 1978-06-30 1978-06-30 Electrode formation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8012278A JPS558036A (en) 1978-06-30 1978-06-30 Electrode formation

Publications (1)

Publication Number Publication Date
JPS558036A true JPS558036A (en) 1980-01-21

Family

ID=13709393

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8012278A Pending JPS558036A (en) 1978-06-30 1978-06-30 Electrode formation

Country Status (1)

Country Link
JP (1) JPS558036A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS577982A (en) * 1980-06-18 1982-01-16 Fujitsu Ltd Manufacture of light emitting element
JPS5720431A (en) * 1980-07-14 1982-02-02 Toshiba Corp Manufacture of gaas semiconductor device
JPS5720432A (en) * 1980-07-14 1982-02-02 Toshiba Corp Formation of ohmic electrode

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS577982A (en) * 1980-06-18 1982-01-16 Fujitsu Ltd Manufacture of light emitting element
JPS5720431A (en) * 1980-07-14 1982-02-02 Toshiba Corp Manufacture of gaas semiconductor device
JPS5720432A (en) * 1980-07-14 1982-02-02 Toshiba Corp Formation of ohmic electrode

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