JPS57133659A - Manufacture of polycrystalline semiconductor element - Google Patents
Manufacture of polycrystalline semiconductor elementInfo
- Publication number
- JPS57133659A JPS57133659A JP1878481A JP1878481A JPS57133659A JP S57133659 A JPS57133659 A JP S57133659A JP 1878481 A JP1878481 A JP 1878481A JP 1878481 A JP1878481 A JP 1878481A JP S57133659 A JPS57133659 A JP S57133659A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- poly
- doped
- impurity
- type impurity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To manufacture a poly Si resistor having excellent temperature characteristics and resistance value controllability by introducing P type and N type impurities to a poly Si layer at predetermined concentration or higher, introducing a desired impurity and forming a prescribed resistance layer. CONSTITUTION:A poly Si layer 3 is deposited and shaped onto an insulating film 2 (such as a SiO2 film) molded to a Si substrate 1. The P type impurity such as B and the N type impurity such as As are doped to the poly Si layer 3, the surface is thermally treated as necessary, and a diffusion layer 5 is formed to the whole layer. The impurities are doped so that the P type impurity is doped by 10<18>cm<-3> or more and the N type impurity by 3X10<18>cm<-3> or more, the grain boundary of the poly Si 3 is buried, carriers are compensated and high resistance is obtained. A fixed quantity of the impurity 6, such as B, As, P are injected, the surface is thermally treated, and a doped layer 7 having the desired resistance value is shaped. Accordingly, low resistance value can be controlled approximately rectilinearly at the concentration of doping at the succeeding stage, and the poly Si resistor having a small resistance temperature coefficient can be manufactured.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1878481A JPS57133659A (en) | 1981-02-10 | 1981-02-10 | Manufacture of polycrystalline semiconductor element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1878481A JPS57133659A (en) | 1981-02-10 | 1981-02-10 | Manufacture of polycrystalline semiconductor element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57133659A true JPS57133659A (en) | 1982-08-18 |
Family
ID=11981239
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1878481A Pending JPS57133659A (en) | 1981-02-10 | 1981-02-10 | Manufacture of polycrystalline semiconductor element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57133659A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60109260A (en) * | 1983-11-15 | 1985-06-14 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | Compensated polycrystalline silicon resistance element |
| JPH02303154A (en) * | 1989-05-18 | 1990-12-17 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPH0582465A (en) * | 1991-09-24 | 1993-04-02 | Victor Co Of Japan Ltd | Semiconductor device and mos fet |
-
1981
- 1981-02-10 JP JP1878481A patent/JPS57133659A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60109260A (en) * | 1983-11-15 | 1985-06-14 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | Compensated polycrystalline silicon resistance element |
| JPH02303154A (en) * | 1989-05-18 | 1990-12-17 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPH0582465A (en) * | 1991-09-24 | 1993-04-02 | Victor Co Of Japan Ltd | Semiconductor device and mos fet |
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