JPS5513935A - Glass for covering semiconductor - Google Patents

Glass for covering semiconductor

Info

Publication number
JPS5513935A
JPS5513935A JP8676078A JP8676078A JPS5513935A JP S5513935 A JPS5513935 A JP S5513935A JP 8676078 A JP8676078 A JP 8676078A JP 8676078 A JP8676078 A JP 8676078A JP S5513935 A JPS5513935 A JP S5513935A
Authority
JP
Japan
Prior art keywords
percent
charge
sio
glass
positive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8676078A
Other languages
Japanese (ja)
Inventor
Masaru Shinpo
Shinichi Tai
Katsujiro Tanzawa
Mikiko Negishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP8676078A priority Critical patent/JPS5513935A/en
Publication of JPS5513935A publication Critical patent/JPS5513935A/en
Pending legal-status Critical Current

Links

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE: To obtain the glass for covering a semiconductor having an excellent electric property by adding Ga2O3 to a SiO2 - B2O3 - ZnO system glass.
CONSTITUTION: When a silicon element is covered by adding Ga2O3 to SiO2 - B2O3 - ZnO system glass, a charge induced in the interface with the element is turned positive at the element side. In generally, because the element with a high resistance against voltage is formed by using of a n-type substrate, if the induced charge may be positive, the depletion layer on the surface is extended to increase a resistance against voltage. If the positive charge may be excessive, the inversion layer on the surface is made to increase the current. This limit is the induction charge amount of 0.5 to 2×1012/cm3 an appropriate induction charge can be regulated, the characteristics of the semiconductor is considerably raised, the induction charge is thermally stable and any variation of the characteristics is not appeared even in the heat treatment under a reverse bias condition. The composition ratio is set at 3.5 to 15 percent for SiO2, 15 to 35 percent for B2O3, 45 to 70 percent for ZnO and 0.05 to 20 percent for Ga2O3, but the indispensable component for them, at least, is raised upto 90 percent, and 10 percent of PbO and others are caused to be contained for the effective proessing.
COPYRIGHT: (C)1980,JPO&Japio
JP8676078A 1978-07-18 1978-07-18 Glass for covering semiconductor Pending JPS5513935A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8676078A JPS5513935A (en) 1978-07-18 1978-07-18 Glass for covering semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8676078A JPS5513935A (en) 1978-07-18 1978-07-18 Glass for covering semiconductor

Publications (1)

Publication Number Publication Date
JPS5513935A true JPS5513935A (en) 1980-01-31

Family

ID=13895691

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8676078A Pending JPS5513935A (en) 1978-07-18 1978-07-18 Glass for covering semiconductor

Country Status (1)

Country Link
JP (1) JPS5513935A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60130847A (en) * 1983-12-20 1985-07-12 Toshiba Corp Film sealed rectifier
CN1084730C (en) * 1994-02-22 2002-05-15 花王株式会社 Taurine derivatives for use in cleanser compositions

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60130847A (en) * 1983-12-20 1985-07-12 Toshiba Corp Film sealed rectifier
CN1084730C (en) * 1994-02-22 2002-05-15 花王株式会社 Taurine derivatives for use in cleanser compositions

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