JPS5513935A - Glass for covering semiconductor - Google Patents
Glass for covering semiconductorInfo
- Publication number
- JPS5513935A JPS5513935A JP8676078A JP8676078A JPS5513935A JP S5513935 A JPS5513935 A JP S5513935A JP 8676078 A JP8676078 A JP 8676078A JP 8676078 A JP8676078 A JP 8676078A JP S5513935 A JPS5513935 A JP S5513935A
- Authority
- JP
- Japan
- Prior art keywords
- percent
- charge
- sio
- glass
- positive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE: To obtain the glass for covering a semiconductor having an excellent electric property by adding Ga2O3 to a SiO2 - B2O3 - ZnO system glass.
CONSTITUTION: When a silicon element is covered by adding Ga2O3 to SiO2 - B2O3 - ZnO system glass, a charge induced in the interface with the element is turned positive at the element side. In generally, because the element with a high resistance against voltage is formed by using of a n-type substrate, if the induced charge may be positive, the depletion layer on the surface is extended to increase a resistance against voltage. If the positive charge may be excessive, the inversion layer on the surface is made to increase the current. This limit is the induction charge amount of 0.5 to 2×1012/cm3 an appropriate induction charge can be regulated, the characteristics of the semiconductor is considerably raised, the induction charge is thermally stable and any variation of the characteristics is not appeared even in the heat treatment under a reverse bias condition. The composition ratio is set at 3.5 to 15 percent for SiO2, 15 to 35 percent for B2O3, 45 to 70 percent for ZnO and 0.05 to 20 percent for Ga2O3, but the indispensable component for them, at least, is raised upto 90 percent, and 10 percent of PbO and others are caused to be contained for the effective proessing.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8676078A JPS5513935A (en) | 1978-07-18 | 1978-07-18 | Glass for covering semiconductor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8676078A JPS5513935A (en) | 1978-07-18 | 1978-07-18 | Glass for covering semiconductor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5513935A true JPS5513935A (en) | 1980-01-31 |
Family
ID=13895691
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8676078A Pending JPS5513935A (en) | 1978-07-18 | 1978-07-18 | Glass for covering semiconductor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5513935A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60130847A (en) * | 1983-12-20 | 1985-07-12 | Toshiba Corp | Film sealed rectifier |
CN1084730C (en) * | 1994-02-22 | 2002-05-15 | 花王株式会社 | Taurine derivatives for use in cleanser compositions |
-
1978
- 1978-07-18 JP JP8676078A patent/JPS5513935A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60130847A (en) * | 1983-12-20 | 1985-07-12 | Toshiba Corp | Film sealed rectifier |
CN1084730C (en) * | 1994-02-22 | 2002-05-15 | 花王株式会社 | Taurine derivatives for use in cleanser compositions |
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