JPS5780765A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5780765A JPS5780765A JP15587980A JP15587980A JPS5780765A JP S5780765 A JPS5780765 A JP S5780765A JP 15587980 A JP15587980 A JP 15587980A JP 15587980 A JP15587980 A JP 15587980A JP S5780765 A JPS5780765 A JP S5780765A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- junction
- protective film
- main
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 239000000758 substrate Substances 0.000 abstract 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 230000001681 protective effect Effects 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 2
- 239000011521 glass Substances 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 230000015556 catabolic process Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
Abstract
PURPOSE:To enable always introduction of maximum reverse withstand voltage characteristics in a semiconductor device by forming a P-N junction in a semiconductor substrate, and then etching and removing in advance the surface of the substrate to form a protective film. CONSTITUTION:A P type region is formed on one main surface of an N type substrate 1, a main junction 2 and a guard ring junction 3 are annularly formed, and a protective film 4' of glass member is formed in the range containing the main junction 2 outside the junction 3. A protective film 4'' such as SiO2 is formed in the surface region in which the film 4' of the main junction 2 is not formed. The film 4' is formed by etching and removing the surface of the substrate wider than the range laterally extending under the surface of the substrate in the extension of a depletion layer when the maximum reverse withstand voltage in designing the diode is applied and filling and baking the glass member thereto. In this manner, the surface insulating breakdown by the charge storage in the boundary between the protective film such as SiO2 and the Si substrate can be prevented.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15587980A JPS5780765A (en) | 1980-11-07 | 1980-11-07 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15587980A JPS5780765A (en) | 1980-11-07 | 1980-11-07 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5780765A true JPS5780765A (en) | 1982-05-20 |
Family
ID=15615496
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15587980A Pending JPS5780765A (en) | 1980-11-07 | 1980-11-07 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5780765A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0526100U (en) * | 1991-09-13 | 1993-04-06 | 吉村精機株式会社 | Clothes wrinkle remover |
| JP2006222213A (en) * | 2005-02-09 | 2006-08-24 | Matsushita Electric Ind Co Ltd | Surge protecting semiconductor device and its manufacturing method |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54111287A (en) * | 1978-02-21 | 1979-08-31 | Fuji Electric Co Ltd | Resin seal planar-structure semiconductor element |
-
1980
- 1980-11-07 JP JP15587980A patent/JPS5780765A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54111287A (en) * | 1978-02-21 | 1979-08-31 | Fuji Electric Co Ltd | Resin seal planar-structure semiconductor element |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0526100U (en) * | 1991-09-13 | 1993-04-06 | 吉村精機株式会社 | Clothes wrinkle remover |
| JP2006222213A (en) * | 2005-02-09 | 2006-08-24 | Matsushita Electric Ind Co Ltd | Surge protecting semiconductor device and its manufacturing method |
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