JPS5734374A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5734374A
JPS5734374A JP10993680A JP10993680A JPS5734374A JP S5734374 A JPS5734374 A JP S5734374A JP 10993680 A JP10993680 A JP 10993680A JP 10993680 A JP10993680 A JP 10993680A JP S5734374 A JPS5734374 A JP S5734374A
Authority
JP
Japan
Prior art keywords
film
fluorine
electrode
substrate
amorphous silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10993680A
Other languages
Japanese (ja)
Other versions
JPS6328345B2 (en
Inventor
Genshiro Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP10993680A priority Critical patent/JPS5734374A/en
Publication of JPS5734374A publication Critical patent/JPS5734374A/en
Publication of JPS6328345B2 publication Critical patent/JPS6328345B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To obtain a titled device which has a high withstand voltage by utilizing an amorphous silicon film which contains hydrogen and fluorine as a stabilizing film which covers regions except a junction region in a semiconductor device having a junction region on its surface. CONSTITUTION:A surface protective film 6 is attached on a semiconductor substrate 1, and an opening is prepared on it and a Schottky barrier metal electrode 2 which contacts with the substrate 1 is built extended onto a film 6 near the edge of the opening. Next a Schottky barrier diode is built by an electrode 3 attached on a metal film 2 which extends on the film 6. In this arrangement an amorphous silicon film which contains hydrogen or fluorine is used as the film 6 to make extension of a depletion layer near the electrode 3 wider. In this arrangement by an action of hydrogen or fluorine in the film 6 a local level density in a band is decreased to be approximately 10<16>-10<17>/cm<3>.eV combining severed bond of co-valence combination which happens peculiarly in the film 6. By this action it is made to be an ideal surface stabilizing film by eliminating formation of a level on the boundary surface between the substrate and it.
JP10993680A 1980-08-08 1980-08-08 Semiconductor device Granted JPS5734374A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10993680A JPS5734374A (en) 1980-08-08 1980-08-08 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10993680A JPS5734374A (en) 1980-08-08 1980-08-08 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5734374A true JPS5734374A (en) 1982-02-24
JPS6328345B2 JPS6328345B2 (en) 1988-06-08

Family

ID=14522857

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10993680A Granted JPS5734374A (en) 1980-08-08 1980-08-08 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5734374A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59150480A (en) * 1983-02-04 1984-08-28 Toshiba Corp Semiconductor pressure conversion device
JPS613470A (en) * 1984-06-18 1986-01-09 Nec Corp Semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5068776A (en) * 1973-10-23 1975-06-09
JPS5645018A (en) * 1979-09-20 1981-04-24 Matsushita Electronics Corp Semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5068776A (en) * 1973-10-23 1975-06-09
JPS5645018A (en) * 1979-09-20 1981-04-24 Matsushita Electronics Corp Semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59150480A (en) * 1983-02-04 1984-08-28 Toshiba Corp Semiconductor pressure conversion device
JPS613470A (en) * 1984-06-18 1986-01-09 Nec Corp Semiconductor device

Also Published As

Publication number Publication date
JPS6328345B2 (en) 1988-06-08

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