GB1271639A - Improvements in or relating to metal-semiconductor diodes - Google Patents
Improvements in or relating to metal-semiconductor diodesInfo
- Publication number
- GB1271639A GB1271639A GB5925170A GB5925170A GB1271639A GB 1271639 A GB1271639 A GB 1271639A GB 5925170 A GB5925170 A GB 5925170A GB 5925170 A GB5925170 A GB 5925170A GB 1271639 A GB1271639 A GB 1271639A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- contact
- insulating layer
- semi
- window
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 229910004298 SiO 2 Inorganic materials 0.000 abstract 2
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 abstract 1
- 229910018507 Al—Ni Inorganic materials 0.000 abstract 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- 229910045601 alloy Inorganic materials 0.000 abstract 1
- 239000000956 alloy Substances 0.000 abstract 1
- 230000015556 catabolic process Effects 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 230000005684 electric field Effects 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 229910021339 platinum silicide Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
1,271,639. Semi-conductor devices. SIEMENS A.G. 14 Dec., 1970 [15 Dec., 1969], No. 59251/70. Heading H1K. In a Schottky diode a conductive layer contacts the surface of the semi-conductor body through an aperture in a thin insulating layer which extends on to a thicker insulating layer surrounding the contact. The part of the contact extending over the thin insulating layer increases the breakdown voltage of the diode by redistributing the electric field at the edge of the contact. As shown, a high resistivity epitaxial layer 2 on a substrate 1 is provided with a thermally deposited layer 3 of SiO 2 , a first window 5 is etched in layer 3, a layer 4 of Si 3 N 4 is thermally deposited, a window 6 is etched in the layer 4 within the window 5, and a rectifying contact 7 of Al, Al-Ni alloy, or platinum silicide is deposited. The thin insulating layer 4 may comprise two. or more films, for example it may be formed by depositing a film of Si 3 N 4 on a film of SiO 2 . The semi-conductor material may be Si, Ge or GaAs.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19691962814 DE1962814A1 (en) | 1969-12-15 | 1969-12-15 | Metal semiconductor diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1271639A true GB1271639A (en) | 1972-04-19 |
Family
ID=5753916
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB5925170A Expired GB1271639A (en) | 1969-12-15 | 1970-12-14 | Improvements in or relating to metal-semiconductor diodes |
Country Status (8)
| Country | Link |
|---|---|
| JP (1) | JPS509674B1 (en) |
| AT (1) | AT317302B (en) |
| CH (1) | CH517382A (en) |
| DE (1) | DE1962814A1 (en) |
| FR (1) | FR2070856B1 (en) |
| GB (1) | GB1271639A (en) |
| NL (1) | NL7018216A (en) |
| SE (1) | SE353815B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0869361A3 (en) * | 1997-04-02 | 1999-12-29 | Tohoku Electronic Industrial Co., Ltd. | Method of and device for measuring antioxidation capability of liquid sample |
| DE50009436D1 (en) | 1999-09-22 | 2005-03-10 | Siced Elect Dev Gmbh & Co Kg | SiC semiconductor device with a Schottky contact and method for its production |
| DE10344749B3 (en) * | 2003-09-25 | 2005-01-20 | Infineon Technologies Ag | Schottky contact used in the production of electronic components comprises an insulating protective layer arranged on an insulating layer and in a protective region lying next to a metal-semiconductor transition |
-
1969
- 1969-12-15 DE DE19691962814 patent/DE1962814A1/en active Pending
-
1970
- 1970-12-11 SE SE1682770A patent/SE353815B/xx unknown
- 1970-12-14 FR FR7044940A patent/FR2070856B1/fr not_active Expired
- 1970-12-14 NL NL7018216A patent/NL7018216A/xx unknown
- 1970-12-14 GB GB5925170A patent/GB1271639A/en not_active Expired
- 1970-12-14 CH CH1850670A patent/CH517382A/en not_active IP Right Cessation
- 1970-12-14 AT AT1122670A patent/AT317302B/en not_active IP Right Cessation
- 1970-12-15 JP JP11138670A patent/JPS509674B1/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| SE353815B (en) | 1973-02-12 |
| AT317302B (en) | 1974-08-26 |
| NL7018216A (en) | 1971-06-17 |
| CH517382A (en) | 1971-12-31 |
| FR2070856B1 (en) | 1974-07-12 |
| DE1962814A1 (en) | 1971-06-16 |
| FR2070856A1 (en) | 1971-09-17 |
| JPS509674B1 (en) | 1975-04-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PCNP | Patent ceased through non-payment of renewal fee |