GB1312678A - Schottky barrier diode - Google Patents
Schottky barrier diodeInfo
- Publication number
- GB1312678A GB1312678A GB3315070A GB3315070A GB1312678A GB 1312678 A GB1312678 A GB 1312678A GB 3315070 A GB3315070 A GB 3315070A GB 3315070 A GB3315070 A GB 3315070A GB 1312678 A GB1312678 A GB 1312678A
- Authority
- GB
- United Kingdom
- Prior art keywords
- epitaxial layer
- region
- junction
- substrate
- annular region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000004888 barrier function Effects 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 abstract 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
1312678 Semi-conductor devices GENERAL ELECTRIC CO 8 July 1970 [30 July 1969] 33150/70 Heading H1K A Schottky barrier diode comprises a silicon N + type substrate 202 on which has been grown an N type epitaxial layer 206, a P + type annular region 210 formed in this epitaxial layer, and a metal rectifying electrode 218 on the surface of the epitaxial layer covering the region bounded by the annular region and extending into the annular region, the junction 208 between the epitaxial layer and the substrate over that region inside the annular region being much closer to the free surface of the epitaxial layer than elsewhere, the spacing between the junction 208 and the free surface here substantially corresponding to the minimum spacing between the junction 208 and the junction between the epitaxial layer and the substrate. The thickness of the epitaxial layer in this region may be further reduced by etching a depression in the surface over this region before provision of the rectifying electrode, Fig. 4, not shown. An ohmic electrode 204 is applied to the substrate and exposed surfaces are covered with an insulating layer 214.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US84608669A | 1969-07-30 | 1969-07-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1312678A true GB1312678A (en) | 1973-04-04 |
Family
ID=25296899
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB3315070A Expired GB1312678A (en) | 1969-07-30 | 1970-07-08 | Schottky barrier diode |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS4838100B1 (en) |
| DE (2) | DE7028462U (en) |
| FR (1) | FR2053304B1 (en) |
| GB (1) | GB1312678A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2137412A (en) * | 1983-03-15 | 1984-10-03 | Standard Telephones Cables Ltd | Semiconductor device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1139495A (en) * | 1966-08-17 | 1969-01-08 | Ass Elect Ind | Schottky barrier semi-conductor devices |
-
1970
- 1970-07-08 GB GB3315070A patent/GB1312678A/en not_active Expired
- 1970-07-29 DE DE19707028462 patent/DE7028462U/en not_active Expired
- 1970-07-29 DE DE19702037533 patent/DE2037533A1/en active Pending
- 1970-07-30 FR FR7028247A patent/FR2053304B1/fr not_active Expired
- 1970-07-30 JP JP6615470A patent/JPS4838100B1/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2137412A (en) * | 1983-03-15 | 1984-10-03 | Standard Telephones Cables Ltd | Semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| DE2037533A1 (en) | 1971-02-11 |
| JPS4838100B1 (en) | 1973-11-15 |
| FR2053304B1 (en) | 1973-10-19 |
| FR2053304A1 (en) | 1971-04-16 |
| DE7028462U (en) | 1972-02-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PLNP | Patent lapsed through nonpayment of renewal fees |