GB1139495A - Schottky barrier semi-conductor devices - Google Patents
Schottky barrier semi-conductor devicesInfo
- Publication number
- GB1139495A GB1139495A GB3685966A GB3685966A GB1139495A GB 1139495 A GB1139495 A GB 1139495A GB 3685966 A GB3685966 A GB 3685966A GB 3685966 A GB3685966 A GB 3685966A GB 1139495 A GB1139495 A GB 1139495A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- schottky barrier
- semi
- conductor devices
- recess
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 230000004888 barrier function Effects 0.000 title abstract 3
- 239000002184 metal Substances 0.000 abstract 2
- 229910052751 metal Inorganic materials 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 229910052759 nickel Inorganic materials 0.000 abstract 1
- 150000004767 nitrides Chemical class 0.000 abstract 1
- 239000008188 pellet Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
1,139,495. Semi-conductor devices. ASSOCIATED ELECTRICAL INDUSTRIES Ltd. 6 July, 1967 [17 Aug., 1966], No. 36859/66. Heading H1K. A Schottky barrier device comprises a semiconductor wafer 7, e.g. of Si or Ge having a resistivity of the order of 1 ohm-cm., having a region 10 of reduced thickness, with a Schottky barrier-forming metal layer 14, e.g. of W, on one face of the region 10, and an ohmic contactforming metal layer 13 on the other face. Both layers 13 and 14 may cover the respective surfaces of the wafer 7, one or both of which surfaces may be provided with a recess, such as 8, by etching. Alternatively the layer on the recessed surface may comprise a pellet filling the recess. An insulating layer, e.g. of the oxide or nitride of the semi-conductor material, may underlie the barrier forming layer 14 to form a varactor diode. The free surface of the layer 14, if it is of W, may be plated with Ni or Au, contact being made to this by a whisker, large area pressure contacts, or soldered leads.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB3685966A GB1139495A (en) | 1966-08-17 | 1966-08-17 | Schottky barrier semi-conductor devices |
DE19671589465 DE1589465A1 (en) | 1966-08-17 | 1967-08-16 | Schottky semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB3685966A GB1139495A (en) | 1966-08-17 | 1966-08-17 | Schottky barrier semi-conductor devices |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1139495A true GB1139495A (en) | 1969-01-08 |
Family
ID=10391757
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB3685966A Expired GB1139495A (en) | 1966-08-17 | 1966-08-17 | Schottky barrier semi-conductor devices |
Country Status (2)
Country | Link |
---|---|
DE (1) | DE1589465A1 (en) |
GB (1) | GB1139495A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2007393A1 (en) * | 1968-04-05 | 1970-01-09 | Matsushita Electronics Corp | |
FR2053304A1 (en) * | 1969-07-30 | 1971-04-16 | Gen Electric | |
US3699407A (en) * | 1971-09-29 | 1972-10-17 | Motorola Inc | Electro-optical coupled-pair using a schottky barrier diode detector |
-
1966
- 1966-08-17 GB GB3685966A patent/GB1139495A/en not_active Expired
-
1967
- 1967-08-16 DE DE19671589465 patent/DE1589465A1/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2007393A1 (en) * | 1968-04-05 | 1970-01-09 | Matsushita Electronics Corp | |
FR2053304A1 (en) * | 1969-07-30 | 1971-04-16 | Gen Electric | |
US3699407A (en) * | 1971-09-29 | 1972-10-17 | Motorola Inc | Electro-optical coupled-pair using a schottky barrier diode detector |
Also Published As
Publication number | Publication date |
---|---|
DE1589465A1 (en) | 1970-04-02 |
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