GB1139495A - Schottky barrier semi-conductor devices - Google Patents

Schottky barrier semi-conductor devices

Info

Publication number
GB1139495A
GB1139495A GB3685966A GB3685966A GB1139495A GB 1139495 A GB1139495 A GB 1139495A GB 3685966 A GB3685966 A GB 3685966A GB 3685966 A GB3685966 A GB 3685966A GB 1139495 A GB1139495 A GB 1139495A
Authority
GB
United Kingdom
Prior art keywords
layer
schottky barrier
semi
conductor devices
recess
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3685966A
Inventor
Harold Victor Shurmer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Associated Electrical Industries Ltd
Original Assignee
Associated Electrical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Associated Electrical Industries Ltd filed Critical Associated Electrical Industries Ltd
Priority to GB3685966A priority Critical patent/GB1139495A/en
Priority to DE19671589465 priority patent/DE1589465A1/en
Publication of GB1139495A publication Critical patent/GB1139495A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

1,139,495. Semi-conductor devices. ASSOCIATED ELECTRICAL INDUSTRIES Ltd. 6 July, 1967 [17 Aug., 1966], No. 36859/66. Heading H1K. A Schottky barrier device comprises a semiconductor wafer 7, e.g. of Si or Ge having a resistivity of the order of 1 ohm-cm., having a region 10 of reduced thickness, with a Schottky barrier-forming metal layer 14, e.g. of W, on one face of the region 10, and an ohmic contactforming metal layer 13 on the other face. Both layers 13 and 14 may cover the respective surfaces of the wafer 7, one or both of which surfaces may be provided with a recess, such as 8, by etching. Alternatively the layer on the recessed surface may comprise a pellet filling the recess. An insulating layer, e.g. of the oxide or nitride of the semi-conductor material, may underlie the barrier forming layer 14 to form a varactor diode. The free surface of the layer 14, if it is of W, may be plated with Ni or Au, contact being made to this by a whisker, large area pressure contacts, or soldered leads.
GB3685966A 1966-08-17 1966-08-17 Schottky barrier semi-conductor devices Expired GB1139495A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GB3685966A GB1139495A (en) 1966-08-17 1966-08-17 Schottky barrier semi-conductor devices
DE19671589465 DE1589465A1 (en) 1966-08-17 1967-08-16 Schottky semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB3685966A GB1139495A (en) 1966-08-17 1966-08-17 Schottky barrier semi-conductor devices

Publications (1)

Publication Number Publication Date
GB1139495A true GB1139495A (en) 1969-01-08

Family

ID=10391757

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3685966A Expired GB1139495A (en) 1966-08-17 1966-08-17 Schottky barrier semi-conductor devices

Country Status (2)

Country Link
DE (1) DE1589465A1 (en)
GB (1) GB1139495A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2007393A1 (en) * 1968-04-05 1970-01-09 Matsushita Electronics Corp
FR2053304A1 (en) * 1969-07-30 1971-04-16 Gen Electric
US3699407A (en) * 1971-09-29 1972-10-17 Motorola Inc Electro-optical coupled-pair using a schottky barrier diode detector

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2007393A1 (en) * 1968-04-05 1970-01-09 Matsushita Electronics Corp
FR2053304A1 (en) * 1969-07-30 1971-04-16 Gen Electric
US3699407A (en) * 1971-09-29 1972-10-17 Motorola Inc Electro-optical coupled-pair using a schottky barrier diode detector

Also Published As

Publication number Publication date
DE1589465A1 (en) 1970-04-02

Similar Documents

Publication Publication Date Title
GB1233466A (en)
GB1053069A (en)
US3040218A (en) Constant current devices
GB1296348A (en)
ES370557A1 (en) Schottky barrier semiconductor device having a substantially non-conductive barrier for preventing undesirable reverse-leakage currents and method for making the same
GB1514795A (en) Contacts on semiconductors
US3495141A (en) Controllable schottky diode
GB1359780A (en) Beam-lead semiconductor components
GB1288578A (en)
GB1207093A (en) Improvements in or relating to schottky barrier semiconductor devices
US3463971A (en) Hybrid semiconductor device including diffused-junction and schottky-barrier diodes
GB1139495A (en) Schottky barrier semi-conductor devices
GB1088795A (en) Semiconductor devices with low leakage current across junction
GB1088637A (en) Four layer semiconductor switching devices having a shorted emitter
US3457473A (en) Semiconductor device with schottky barrier formed on (100) plane of gaas
US3599323A (en) Hot carrier diode having low turn-on voltage
US3365628A (en) Metallic contacts for semiconductor devices
GB1057817A (en) Semiconductor diodes and methods of making them
GB973722A (en) Improvements in or relating to semiconductor devices
GB1268335A (en) Semiconductor device
GB1268406A (en) Improvements in and relating to pressure sensitive semiconductor devices and method of manufacturing the same
GB1265018A (en)
GB1238876A (en)
US3723830A (en) Low current, now noise avalanche diode
GB1230880A (en)