GB1230880A - - Google Patents

Info

Publication number
GB1230880A
GB1230880A GB1230880DA GB1230880A GB 1230880 A GB1230880 A GB 1230880A GB 1230880D A GB1230880D A GB 1230880DA GB 1230880 A GB1230880 A GB 1230880A
Authority
GB
United Kingdom
Prior art keywords
wafer
contacts
silver
components
feb
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19681639176 external-priority patent/DE1639176C3/en
Application filed filed Critical
Publication of GB1230880A publication Critical patent/GB1230880A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/535—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including internal interconnections, e.g. cross-under constructions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5384—Conductive vias through the substrate with or without pins, e.g. buried coaxial conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/023—Redistribution layers [RDL] for bonding areas
    • H01L2224/0236—Shape of the insulating layers therebetween
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/023—Redistribution layers [RDL] for bonding areas
    • H01L2224/0237—Disposition of the redistribution layers
    • H01L2224/02375—Top view
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/0401—Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05541—Structure
    • H01L2224/05548—Bonding area integrally formed with a redistribution layer on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/1302—Disposition
    • H01L2224/13024—Disposition the bump connector being disposed on a redistribution layer on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12035—Zener diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12043—Photo diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Die Bonding (AREA)

Abstract

1,230,880. Integrated circuits. ITT INDUSTRIES Inc. 19 Feb., 1969 [23 Feb., 1968], No. 8949/69. Heading H1K. In an integrated circuit consisting of a wafer carrying or containing the individual circuit components, the only external connections are made to a pair of large centrally disposed contacts on opposite sides of the wafer. As shown in Fig. 2, a mushroom contact 5a may be deposited on one of the central contacts 5, possibly through an aperture in an insulating layer of glass, silicon nitride, silicon oxides or P.T.F.E. overlying the contact. The circuit may be mounted with lead out wires soldered to contacts 1 and 5a or clamped between pressure contacts in a conventional diode housing. Internal connections such as 4a, 4c may consist of evaporated films consisting of layers of aluminium and silver, chromium and silver, chromium, silver and gold, nickel and gold, or nickel, lead and tin. In the arrangement shown, the N+ zone forms a collector common to various transistors. In other embodiments the wafer is of P + type with an N-type epitaxial surface layer in which the components are formed. Internal connections between the wafer faces may be made by means of P + paths through the epitaxial layer formed by diffusion, alloying or epitaxial deposition, the paths sometimes functioning also as isolation walls. In another embodiment the wafer material is insulating and metal interconnections extend through it between components mounted on one or both faces.
GB1230880D 1968-02-23 1969-02-19 Expired GB1230880A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19681639176 DE1639176C3 (en) 1968-02-23 1968-02-23 Temperature-compensated Zener diode arrangement in the form of a semiconductor circuit

Publications (1)

Publication Number Publication Date
GB1230880A true GB1230880A (en) 1971-05-05

Family

ID=5683973

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1230880D Expired GB1230880A (en) 1968-02-23 1969-02-19

Country Status (7)

Country Link
CH (1) CH493097A (en)
DE (1) DE1639176B2 (en)
ES (1) ES363985A1 (en)
FR (1) FR2002487A1 (en)
GB (1) GB1230880A (en)
NL (1) NL6902799A (en)
SE (1) SE358050B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5965930A (en) * 1997-11-04 1999-10-12 Motorola, Inc. High frequency bipolar transistor and method of forming the same

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6473669A (en) * 1987-09-14 1989-03-17 Fujitsu Ltd Semiconductor integrated circuit
JP2737334B2 (en) * 1989-01-23 1998-04-08 モトローラ・インコーポレーテッド Substrate power supply contact for power integrated circuit
JPH02210860A (en) * 1989-02-09 1990-08-22 Fujitsu Ltd Semiconductor integrated circuit device
DE4143209A1 (en) * 1991-12-30 1993-07-01 Hoefflinger Bernd Prof Dr INTEGRATED CIRCUIT

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5965930A (en) * 1997-11-04 1999-10-12 Motorola, Inc. High frequency bipolar transistor and method of forming the same

Also Published As

Publication number Publication date
CH493097A (en) 1970-06-30
FR2002487A1 (en) 1969-10-17
DE1639176B2 (en) 1971-02-25
SE358050B (en) 1973-07-16
NL6902799A (en) 1969-08-26
DE1639176A1 (en) 1970-08-20
ES363985A1 (en) 1971-01-01

Similar Documents

Publication Publication Date Title
GB1233466A (en)
GB1400608A (en) Transcalent semiconductor device
GB1021359A (en) Improved electrical connection to a semiconductor body
GB1053069A (en)
GB1107577A (en) Improvements in semiconductor diodes
GB1023531A (en) Improvements in or relating to semiconductor devices
GB1384850A (en) Semiconductor components
GB1514795A (en) Contacts on semiconductors
GB1230880A (en)
GB1160086A (en) Semiconductor Devices and methods of making them
US3463971A (en) Hybrid semiconductor device including diffused-junction and schottky-barrier diodes
GB1193532A (en) Improved Electrical Contact for Semiconductor Devices.
GB907569A (en) Improvements in or relating to semi-conductor devices
GB1057817A (en) Semiconductor diodes and methods of making them
EP0026788A4 (en) Semiconductor device.
GB1088637A (en) Four layer semiconductor switching devices having a shorted emitter
US3636418A (en) Epitaxial semiconductor device having adherent bonding pads
US3365628A (en) Metallic contacts for semiconductor devices
ES355851A1 (en) Improvements relating to Terminal Structures
GB1139352A (en) Process for making ohmic contact to a semiconductor substrate
GB1191093A (en) Improvement of the Electrode Lead-Out Structure of a Semiconductor Device
US3723830A (en) Low current, now noise avalanche diode
GB1238876A (en)
GB1202253A (en) All electronic vhf tuner
US3319135A (en) Low capacitance planar diode

Legal Events

Date Code Title Description
PS Patent sealed
435 Patent endorsed 'licences of right' on the date specified (sect. 35/1949)
PE20 Patent expired after termination of 20 years