ES355851A1 - Improvements relating to Terminal Structures - Google Patents

Improvements relating to Terminal Structures

Info

Publication number
ES355851A1
ES355851A1 ES355851A ES355851A ES355851A1 ES 355851 A1 ES355851 A1 ES 355851A1 ES 355851 A ES355851 A ES 355851A ES 355851 A ES355851 A ES 355851A ES 355851 A1 ES355851 A1 ES 355851A1
Authority
ES
Spain
Prior art keywords
layer
chromium
glass
nickel
contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES355851A
Other languages
Spanish (es)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of ES355851A1 publication Critical patent/ES355851A1/en
Expired legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02Bonding areas ; Manufacturing methods related thereto
    • H01L24/03Manufacturing methods
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    • H01L24/02Bonding areas ; Manufacturing methods related thereto
    • H01L24/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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    • H01L2224/05155Nickel [Ni] as principal constituent
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    • H01L2924/151Die mounting substrate
    • H01L2924/156Material
    • H01L2924/15786Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787Ceramics, e.g. crystalline carbides, nitrides or oxides

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Wire Bonding (AREA)
  • Bipolar Transistors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Die Bonding (AREA)

Abstract

A semi-conductor device or printed circuit having a layer of a first metal in an aperture in an insulating layer is provided with a terminal structure comprising a layer of chromium deposited in the aperture and bonded to the first metal and to the insulating layer, a layer of nickel overlying and bonded to the chromium layer, and a terminal portion including solder on the nickel layer. As shown, Fig. 1, a diffused region 14 produced in a P- or N-type body 12 by diffusion using a photolithographically processed silicon dioxide mask 15 is provided with a deposited ohmic contact layer 18 of aluminium, aluminiumsilicon, platinum, palladium, chromium or molybdenum, which is covered with a layer 16 of glass in which a window is formed and layers 22, 24 and 26 of chromium, nickel, and gold, respectively, are deposited to form a laminated contact pad 20. A contact ball 30 is secured to the contact pad by a solder mass 28. Alternatively, the contact ball may be replaced by a solder mound. The chromium and nickel layers may be deposited from separate sources or by fractional distillation of a chromium-nickel alloy. The silicon dioxide layer may be produced by thermal growth or RF sputtering and a layer of alumina or silicon nitride may be used instead of silicon dioxide. In a modification, Fig. 2 (not shown), the layer of glass is formed before deposition of the ohmic contact layer (42). In a second modification, Figs. 3 and 4 (not shown), the contact layer (54) to the emitter of a transistor extends between the oxide and glass layers (15, 16) to a point remote from the active areas of the device where it is contacted by the laminated contact pad (20). In a further modification, Fig. 5 (not shown), a contact layer (64) to a diffused region extends between insulating layers to a remote point where it is contacted by a second buried layer (68) of aluminium, silver, copper, molybdenum or laminated chromium-gold-chromium, which is itself contacted by the laminated contact pad (20). In a second embodiment, Fig. 6 (not shown), a conductive band (74) on a glass or ceramic substrate (72) is covered with a layer (76) of glass and is contacted by means of a laminated contact pad (20) to which is soldered the terminal (81) of a component (80).
ES355851A 1967-07-13 1968-07-06 Improvements relating to Terminal Structures Expired ES355851A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US65312867A 1967-07-13 1967-07-13

Publications (1)

Publication Number Publication Date
ES355851A1 true ES355851A1 (en) 1970-03-16

Family

ID=24619594

Family Applications (1)

Application Number Title Priority Date Filing Date
ES355851A Expired ES355851A1 (en) 1967-07-13 1968-07-06 Improvements relating to Terminal Structures

Country Status (6)

Country Link
BE (1) BE717095A (en)
CH (1) CH476397A (en)
DE (1) DE1764572A1 (en)
ES (1) ES355851A1 (en)
FR (1) FR1569479A (en)
GB (1) GB1173117A (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3821785A (en) * 1972-03-27 1974-06-28 Signetics Corp Semiconductor structure with bumps
IT1075077B (en) * 1977-03-08 1985-04-22 Ates Componenti Elettron METHOD PR REALIZING CONTACTS ON SEMICONDUCTORS
US4307179A (en) * 1980-07-03 1981-12-22 International Business Machines Corporation Planar metal interconnection system and process
GB2095904B (en) * 1981-03-23 1985-11-27 Gen Electric Semiconductor device with built-up low resistance contact and laterally conducting second contact
FR2531302A1 (en) * 1982-07-30 1984-02-03 Xerox Corp METHODS OF FORMING A HIGH DENSITY ELECTRICAL CIRCUIT AND INTERCONNECTING ELEMENTS FOR THE CIRCUIT
IT1215268B (en) * 1985-04-26 1990-01-31 Ates Componenti Elettron APPARATUS AND METHOD FOR THE PERFECT PACKAGING OF SEMICONDUCTIVE DEVICES.

Also Published As

Publication number Publication date
GB1173117A (en) 1969-12-03
DE1764572A1 (en) 1971-03-04
FR1569479A (en) 1969-05-30
BE717095A (en) 1968-12-02
CH476397A (en) 1969-07-31

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