GB2095904B - Semiconductor device with built-up low resistance contact and laterally conducting second contact - Google Patents

Semiconductor device with built-up low resistance contact and laterally conducting second contact

Info

Publication number
GB2095904B
GB2095904B GB8203332A GB8203332A GB2095904B GB 2095904 B GB2095904 B GB 2095904B GB 8203332 A GB8203332 A GB 8203332A GB 8203332 A GB8203332 A GB 8203332A GB 2095904 B GB2095904 B GB 2095904B
Authority
GB
United Kingdom
Prior art keywords
electrode
contact
low resistance
semiconductor device
built
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB8203332A
Other versions
GB2095904A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of GB2095904A publication Critical patent/GB2095904A/en
Application granted granted Critical
Publication of GB2095904B publication Critical patent/GB2095904B/en
Expired legal-status Critical Current

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  • Engineering & Computer Science (AREA)
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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Wire Bonding (AREA)

Abstract

A semiconductor device having low resistance connection to a portion thereof carrying substantial current. First and second electrodes 34,32 are provided on a major surface of the semiconductor 12, the first electrode 34 providing lateral contact to a wire bond from e.g. a base 18 of a transistor; the second electrode 32 providing low resistance vertical contact from the high current carrying region eg. emitter 20. A conductive plate 43 is supported between upstanding spaced apart portions of the second electrode 32 and is thereby vertically spaced apart from the first electrode 34, which electrodes are further protected by dielectric layer 36. Electrode 32 includes layers of metal (32-40) and a solder blob 42. <IMAGE>
GB8203332A 1981-03-23 1982-02-05 Semiconductor device with built-up low resistance contact and laterally conducting second contact Expired GB2095904B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US24623181A 1981-03-23 1981-03-23

Publications (2)

Publication Number Publication Date
GB2095904A GB2095904A (en) 1982-10-06
GB2095904B true GB2095904B (en) 1985-11-27

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GB8203332A Expired GB2095904B (en) 1981-03-23 1982-02-05 Semiconductor device with built-up low resistance contact and laterally conducting second contact

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JP (1) JPS57172753A (en)
CA (1) CA1197629A (en)
DE (1) DE3209666A1 (en)
FR (1) FR2502399B1 (en)
GB (1) GB2095904B (en)
MX (1) MX151818A (en)

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JPS60119777A (en) * 1983-11-30 1985-06-27 Mitsubishi Electric Corp Gate turn-off thyristor
DE3446789A1 (en) * 1984-12-21 1986-07-03 SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg METHOD FOR PRODUCING SEMICONDUCTOR COMPONENTS
DE3635708A1 (en) * 1986-10-21 1988-04-28 Bbc Brown Boveri & Cie Method and arrangement for connecting an electrode to a plurality of emitter/cathode regions of a semiconductor component
GB8902431D0 (en) * 1989-02-03 1989-03-22 Plessey Co Plc Flip chip solder bond structure for devices with gold based metallisation
FR2759493B1 (en) * 1997-02-12 2001-01-26 Motorola Semiconducteurs SEMICONDUCTOR POWER DEVICE
US6130141A (en) * 1998-10-14 2000-10-10 Lucent Technologies Inc. Flip chip metallization
EP1306898A1 (en) 2001-10-29 2003-05-02 Dialog Semiconductor GmbH Sub-milliohm on-chip interconnection
US7339110B1 (en) 2003-04-10 2008-03-04 Sunpower Corporation Solar cell and method of manufacture
US7388147B2 (en) 2003-04-10 2008-06-17 Sunpower Corporation Metal contact structure for solar cell and method of manufacture
DE10355953B4 (en) * 2003-11-29 2005-10-20 Infineon Technologies Ag Method of electroplating and contact projection arrangement
CN110998807B (en) 2017-08-01 2023-12-01 株式会社村田制作所 Semiconductor device with a semiconductor device having a plurality of semiconductor chips

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US3381183A (en) * 1965-06-21 1968-04-30 Rca Corp High power multi-emitter transistor
FR1569479A (en) * 1967-07-13 1969-05-30
FR2254879B1 (en) * 1973-12-12 1977-09-23 Alsthom Cgee
JPS50114183A (en) * 1974-02-15 1975-09-06

Also Published As

Publication number Publication date
JPS57172753A (en) 1982-10-23
MX151818A (en) 1985-03-27
DE3209666A1 (en) 1982-11-11
FR2502399B1 (en) 1986-01-31
FR2502399A1 (en) 1982-09-24
GB2095904A (en) 1982-10-06
CA1197629A (en) 1985-12-03

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