US3559004A - Connector structure for housing of pressure-biased semiconductor device - Google Patents

Connector structure for housing of pressure-biased semiconductor device Download PDF

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Publication number
US3559004A
US3559004A US3559004DA US3559004A US 3559004 A US3559004 A US 3559004A US 3559004D A US3559004D A US 3559004DA US 3559004 A US3559004 A US 3559004A
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Prior art keywords
housing portion
housing
semiconductor device
electrical
contact
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Harry Rambeau
Fritz Kirschner
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Siemens AG
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Siemens AG
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Priority claimed from DE19681639402 external-priority patent/DE1639402C3/de
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
    • H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
    • H01L23/049—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body the other leads being perpendicular to the base
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/926—Elongated lead extending axially through another elongated lead

Definitions

  • First and second electrical connectors pass through the housing of a semiconductor device in a gas-tight manner and are electrically insulated from the housing and from each other.
  • the first connector is in electrical contact with an electrically conductive body and with a first contact electrode of the semiconductor device via the conductive body, a plurality of spring discs and a pressure member.
  • the second connector is in electrical contact with the control electrode of the semiconductor device.
  • the present invention relates to a connector structure for the housing of a pressure-biased semiconductor device. More particularly, the invention relates to a connector structure for the gas-tight housing of a pressure-biased thyristor.
  • the semiconductor device of the present invention comprises a semiconductor body of wafer type having a pair of spaced opposed substantially planar surfaces positioned between the first and second contact electrodes and a control electrode which passes through an aperture formed through the first contact electrode.
  • a first housing portion has a substantially planar contact surface which supports the second contact electrode.
  • a second housing portion of substantially hollow cylindrical configuration has a closed top base and forms a gas-tight housing with the first housing portion enclosing the semiconductor body.
  • An electrically conductive pressure member is supported on the first contact electrode and has an aperture formed therethrough in the area of and corresponding with the aperture formed through the first contact electrode.
  • the control electrode passes through the apertures formed through the first contact electrode and the pressure member and is spaced from said first contact electrode and said pressure member.
  • a plurality of spring discs are provided in the housing and function to clamp the semiconductor body, the first and second electrodes and the pressure member between the first housing portion and the second housing portion.
  • the first and second electrical connectors pass through the second housing portion in a gas-tight manner and are electrically insulated from such housing portion and from each other.
  • the first electrical connector is in electrical contact with the first contact electrode of the semiconductor body and the second electrical connector is in electrical contact with the control electrode of said semiconductor body.
  • the pressure member has a connector stud with a central bore formed therethrough through which the control connector or connecting conductor passes.
  • the springs for applying contact pressure between the semiconductor housing and its contact electrodes thereby abut, at least one one side, against the insulated area of the housing.
  • the principal object of the present invention is to provide a new and improved connector structure for the housing of a pressure-biased semiconductor device.
  • An object of the present invention is to provide a new and improved connector structure for the housing of a pressure-biased thyristor.
  • An object of the present invention is to provide a simplified connector structure for the housing of a pressure biased semiconductor device.
  • An object of the present invention is to provide a com nector structure for a pressure-biased semiconductor device, which structure is efiicient, effective and reliable in operation.
  • spring discs utilized to clamp the semiconductor body and its contact electrodes abut at one end against an electrically conductive portion of the second housing portion.
  • an electrically conductive body is provided in the housing and is interposed between the spring discs and the top of the second housing portion.
  • the first electrical connector passes through the second housing portion in a gas-tight manner and is electrically insulated from the second housing portion.
  • the first electrical counector is in electrical contact with the conductive body and with the first contact electrode via the conductive body, the spring discs and the pressure member.
  • the second electrical connector passes through the second housing portion in a gas-tight manner and is electrically insulated from the second housing portion.
  • the second electrical connector is in electrical contact with the control electrode.
  • the second housing portion comprises electrical insulating material and the conductive body abuts the second housing portion on one side and abuts the spring discs on the other side.
  • the conductive body supports the first electrical connector.
  • a sleeve of electrically conductive material is aflixed to each of the first and second housing portions and seals the first housing portion to the second housing portion around the open-base area of the second housing portion.
  • the sleeve comprises metal of substantially annular configuration and is affixed to each of the first and second housing portions by solder.
  • a metal coat may be provided on the side of the second housing portion and the sleeve may be aifixed to such metal coat.
  • the second housing portion may be constructed so that at least the closed top thereof comprises electrical insulating material.
  • the second housing portion may be constructed so that at least the cylindrical side thereof comprises electrical insulating material.
  • a coating of good electrically conductive material such as, for example, silver, is provided on each electrically conductive surface.
  • the second housing portion comprises electrical insulating material such as, for example, ceramic or glass, and the electrically conductive body may comprise a metal coat on part of the inside surface of the top of the second housing portion, or the electrically conductive body may comprise an annular metal body.
  • a semiconductor device comprises an axially symmetrical, plate shaped, first housing portion 1 having a threaded stud 11 extending from one surface thereof and a protruding support portion 12 extending from the other surface thereof.
  • the diameter of the support portion 12 of the first housing portion 1 is similar on that of the plate-shaped part of said first housing portion.
  • the support portion 12 has a substantially planar contact surface on which is positioned one of the principal electrodes of a semiconductor body 3.
  • the semiconductor body 3 is a wafer having a pair of spaced opposed substantially planar surfaces.
  • a first contact electrode 31 is in electrical contact with the upper planar surface of the semiconductor body.
  • the semiconductor body rests on the second contact electrode so that its lower contact surface is in electrical contact with said second contact electrode.
  • the second contact electrode is positioned on and in electrical contact with the support portion 12 of the first housing portion 1.
  • the first contact electrode 31 is of substantially annular configuration having an aperture formed therethrough.
  • a control electrode 32 passes through the aperture formed through the first electrode 31 and is in electrical contact with the upper planar contact surface of the semiconductor body.
  • the control electrode 32 is spaced from, and therefore electrically insulated from the first contact electrode 31.
  • a second housing portion 7 comprises electrical insulating material such as, for example, ceramic material.
  • the second housing portion 7 is of substantially hollow cylindrical configuration. The top base of the cylinder is closed and the bottom base of said cylinder remains open. The second housing portion 7 forms a gas-tight housing with the first housing portion 1 to enclose the semiconductor device.
  • the first and second housing portions 1 and 7 are sealed to form a gas-tight housing by a sleeve or annular member 71 having a flange in its lower periphery.
  • the sleeve 71 comprises electrically conductive material such as, for example, a suitable metal, and is affixed to the cylindrical side of the second housing portion 7 and to the plateshaped part of the first housing portion 1.
  • the sleeve 71 is afiixed to the second housing portion 7 and to the first housing portion 1 by any suitable means such as, for example, solder.
  • a metal coat may be provided on the cylindrical side of the second housing portion 7 to facilitate the soldering of the sleeve 71 to said second housing portion.
  • the second housing portion 7 is aflixed to the first housing portion 1, via the sleeve 71, after the semiconductor body, its first and second contact electrodes, its control electrode and its ancillary components have been positioned on said first housing portion.
  • a first electrical connector 72 passes through the top base of the second housing portion 7 in a gas-tight manner and is electrically insulated from said second housing portion.
  • a first electrical conductor 61 of the first electrical connector 72 extends into the sealed housing of the semiconductor device.
  • a second electrical connector 73 passes through the second housing portion 7 in a gas-tight manner and is electrically insulated from said second housing portion and from the first electrical connector 72 and the first electrical connector 61 thereof.
  • a second electrical conductor 9 of the second electrical connector 73 is in electrical contact with the control electrode 32 of the semiconductor device.
  • the first electrical conductor 61 of the first electrical connector 72 is in electrical contact with an electrically conductive body 6 which is interposed between a plurality of spring discs and the top of the second housing portion 7.
  • the electrically conductive body 6 is of annular configuration and comprises a suitably conductive material.
  • the electrically conductive body 6 may comprise a metal coat on part of the inside surface of the top of the second housing portion 7.
  • the first electrical conductor 61 of the first electrical connector 72 is in electrical contact with the first contact electrode 31 of the semiconductor device via the electrically conductive body 6, the electrically conductive plurality of spring discs 5 and an electrically conductive pressure member 4.
  • the pressure member 4 comprises electrically conductive material of substantially annular configuration.
  • the pressure member 4 is supported on the first contact electrode 31 and has an aperture formed therethrough in the area of and corresponding with the aperture formed through said first contact electrode.
  • the second electrical conductor 9 thus passes through each of the electrically conductive body 6, the plurality of spring disc 5 and the pressure member 4 without contacting any of these components.
  • the first electrical conductor 6.1 is clamped, crimped or compressed in the first electrical connector 72 so that said first electrical conductor and connector are electrically connected to each other.
  • the first electrical connector 72 is hermetically sealed at its terminus outside the housing.
  • the first electrical conductor 61 of the first electrical connector 72 is preferably afiixed to the electrically conductive body 6 and thereby maintains said electrically conductive body in position against an abutment 74 formed on the inside surface of the top of the second housing portion 7.
  • the plurality of spring discs 5 urge the pressure piece 4 against the first contact electrode 31 of the semiconductor device.
  • the spring discs 5 thus insure an adequate contact pressure of at least 1 kp. per mm.
  • the spring discs 5 also function, as hereinbefore described, to conduct electrical current from the first electrical conductor 61 of the first electrical connector 72 to the first contact electrode 31 of the semiconductor device.
  • the spring discs 5 preferably comprise conventional spring steel and are preferably coated with silver, or other suitable electrically conductive material, to enhance their conductivity.
  • the electrical conductivity of each of the electrically conductive body 6 and the pressure member 4 may also be enhanced by coating each of these components with silver or other suitable material. The silver coating on the various components enhances the electrical contact between them.
  • the second electrical conductor 9 of the second electrical connector 73 is clamped, crimped or compressed in said second electrical connector in a manner similar to the clamping of the first electrical conductor 61 and the first electrical connector 72.
  • the second electrical connector 72 is hermetically sealed at its terminus outside the housing, similarly to the first electrical connector 72.
  • the second electrical conductor 9 of the second electrical connector 73 thus is in electrical contact with the control electrode of the semiconductor device, as hereinbefore described, and is spaced from, and therefore insulated from, each of the components through which it passes.
  • a controllable semiconductor device comprising:
  • a semiconductor body of wafer type having a pair of spaced opposed substantially planar surfaces
  • a first contact electrode having an aperture formed therethrough in electrical contact with one of the surfaces of said semiconductor body
  • control electrode passing through the aperture through said first electrode in electrical contact with said one of the surfaces of said semiconductor body
  • a second contact electrode in electrical contact with the other of the surfaces of said semiconductor body
  • a first housing portion having a substantially planar contact surface supporting the second contact electrode
  • a second housing portion of substantially hollow cylindrical configuration having a closed top base and forming a gas-tight housing with said first housing portion enclosing said semiconductor body;
  • an electrically conductive pressure member supported on said first contact electrode and having an aperture formed therethrough in the area of and corresponding with the aperture formed through said first contact electrodes;
  • spring disc means in the housing clamping said semiconductor body, said first and second electrodes and said pressure member between said first housing portion and said second housing portion;
  • a second electrical connector passing through said second housing portion in a gas-tight manner and electrically insulated from said second housing portion and from said first electrical connector and in electrical contact with said control electrode.
  • a controllable semiconductor device as claimed in claim 3, wherein said sleeve comprises metal of substantially annular configuration and is affixed to each of said first and second housing portions by solder.

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Thyristors (AREA)
  • Die Bonding (AREA)
  • Connections Effected By Soldering, Adhesion, Or Permanent Deformation (AREA)

Abstract

FIRST AND SECOND ELECTRICAL CONNECTORS PASS THROUGH THE HOUSING OF A SEMICONDUCTOR DEVICE IN A GAS-TIGHT MANNER AND ARE ELECTRICALLY INSULATED FROM THE HOUSING AND FROM EACH OTHER. THE FIRST CONNECTOR IS IN ELECTRICAL CONTACT WITH AN ELECTRICALLY CONDUCTIVE BODY AND WITH A FIRST CONTACT ELECTRODE OF THE SEMICONDUCTOR DEVICE VIA THE CON-

DUCTIVE BODY, A PLURALITY OF SPRING DISCS AND A PRESSURE MEMBER. THE SECOND CONNECTOR IS IN ELECTRICAL CONTACT WITH THE CONTROL ELECTRODE OF THE SEMICONDUCTOR DEVICE.

Description

Jan. 26, 1971 B AU ETAL 3,559,004
' CONNECTOR STRUCTUREFOR HOUSING OF PRESSURE-BIASED SEMICONDUCTOR DEVICE v Filed Jan. 28, 1969 FIRST ELECTRICAL 72 73 CONNECTOR EEEM SECOND ELECTRICAL CONNECTOR 61 7 --7l. 6 ---ELECTR|CALLY 5 CONDUCTIVE BODY L ""SPRING DISC r v 71 "-31 PRESSURE MEMBER 3 .1 I H I FIRST HOUSING PORTION United States Patent O 3,559,004 CONNECTOR STRUCTURE FOR HOUSING OF PRESSURE-BIASED SEMICONDUCTOR DEVICE Harry Rambeau and Fritz Kirschner, Munich, Germany, assignors to Siemens Aktiengesellschaft, a corporation of Germany Filed Jan. 28, 1969, Ser. No. 794,698 Claims priority, application Germany, Feb. 8, 1968, 1,639,402 Int. Cl. H011 1/14 U.S. Cl. 317-234 Claims ABSTRACT OF THE DISCLOSURE First and second electrical connectors pass through the housing of a semiconductor device in a gas-tight manner and are electrically insulated from the housing and from each other. The first connector is in electrical contact with an electrically conductive body and with a first contact electrode of the semiconductor device via the conductive body, a plurality of spring discs and a pressure member. The second connector is in electrical contact with the control electrode of the semiconductor device.
DESCRIPTION OF THE INVENTION The present invention relates to a connector structure for the housing of a pressure-biased semiconductor device. More particularly, the invention relates to a connector structure for the gas-tight housing of a pressure-biased thyristor.
The semiconductor device of the present invention comprises a semiconductor body of wafer type having a pair of spaced opposed substantially planar surfaces positioned between the first and second contact electrodes and a control electrode which passes through an aperture formed through the first contact electrode. A first housing portion has a substantially planar contact surface which supports the second contact electrode. A second housing portion of substantially hollow cylindrical configuration has a closed top base and forms a gas-tight housing with the first housing portion enclosing the semiconductor body. An electrically conductive pressure member is supported on the first contact electrode and has an aperture formed therethrough in the area of and corresponding with the aperture formed through the first contact electrode. The control electrode passes through the apertures formed through the first contact electrode and the pressure member and is spaced from said first contact electrode and said pressure member. A plurality of spring discs are provided in the housing and function to clamp the semiconductor body, the first and second electrodes and the pressure member between the first housing portion and the second housing portion. The first and second electrical connectors pass through the second housing portion in a gas-tight manner and are electrically insulated from such housing portion and from each other. The first electrical connector is in electrical contact with the first contact electrode of the semiconductor body and the second electrical connector is in electrical contact with the control electrode of said semiconductor body.
In the type of semiconductor device of the present invention, the pressure member has a connector stud with a central bore formed therethrough through which the control connector or connecting conductor passes. The springs for applying contact pressure between the semiconductor housing and its contact electrodes thereby abut, at least one one side, against the insulated area of the housing.
The principal object of the present invention is to provide a new and improved connector structure for the housing of a pressure-biased semiconductor device.
An object of the present invention is to provide a new and improved connector structure for the housing of a pressure-biased thyristor.
An object of the present invention is to provide a simplified connector structure for the housing of a pressure biased semiconductor device.
An object of the present invention is to provide a com nector structure for a pressure-biased semiconductor device, which structure is efiicient, effective and reliable in operation.
In accordance with the present invention, spring discs utilized to clamp the semiconductor body and its contact electrodes abut at one end against an electrically conductive portion of the second housing portion. More particularly, an electrically conductive body is provided in the housing and is interposed between the spring discs and the top of the second housing portion. The first electrical connector passes through the second housing portion in a gas-tight manner and is electrically insulated from the second housing portion. The first electrical counector is in electrical contact with the conductive body and with the first contact electrode via the conductive body, the spring discs and the pressure member. The second electrical connector passes through the second housing portion in a gas-tight manner and is electrically insulated from the second housing portion. The second electrical connector is in electrical contact with the control electrode.
The second housing portion comprises electrical insulating material and the conductive body abuts the second housing portion on one side and abuts the spring discs on the other side. The conductive body supports the first electrical connector. A sleeve of electrically conductive material is aflixed to each of the first and second housing portions and seals the first housing portion to the second housing portion around the open-base area of the second housing portion. The sleeve comprises metal of substantially annular configuration and is affixed to each of the first and second housing portions by solder. A metal coat may be provided on the side of the second housing portion and the sleeve may be aifixed to such metal coat.
The second housing portion may be constructed so that at least the closed top thereof comprises electrical insulating material. The second housing portion may be constructed so that at least the cylindrical side thereof comprises electrical insulating material. A coating of good electrically conductive material such as, for example, silver, is provided on each electrically conductive surface.
The second housing portion comprises electrical insulating material such as, for example, ceramic or glass, and the electrically conductive body may comprise a metal coat on part of the inside surface of the top of the second housing portion, or the electrically conductive body may comprise an annular metal body.
In order that the present invention may be readily carried into effect, it will now be described with reference to the accompanying drawing, wherein the single figure is a view, partly in section, of an embodiment of a housed pressure-biased semiconductor device including an embodiment of the connector structure of the present invention.
In the figure, a semiconductor device comprises an axially symmetrical, plate shaped, first housing portion 1 having a threaded stud 11 extending from one surface thereof and a protruding support portion 12 extending from the other surface thereof. The diameter of the support portion 12 of the first housing portion 1 is similar on that of the plate-shaped part of said first housing portion. The support portion 12 has a substantially planar contact surface on which is positioned one of the principal electrodes of a semiconductor body 3.
The semiconductor body 3 is a wafer having a pair of spaced opposed substantially planar surfaces. A first contact electrode 31 is in electrical contact with the upper planar surface of the semiconductor body. The semiconductor body rests on the second contact electrode so that its lower contact surface is in electrical contact with said second contact electrode. The second contact electrode is positioned on and in electrical contact with the support portion 12 of the first housing portion 1.
The first contact electrode 31 is of substantially annular configuration having an aperture formed therethrough. A control electrode 32 passes through the aperture formed through the first electrode 31 and is in electrical contact with the upper planar contact surface of the semiconductor body. The control electrode 32 is spaced from, and therefore electrically insulated from the first contact electrode 31.
A second housing portion 7 comprises electrical insulating material such as, for example, ceramic material. The second housing portion 7 is of substantially hollow cylindrical configuration. The top base of the cylinder is closed and the bottom base of said cylinder remains open. The second housing portion 7 forms a gas-tight housing with the first housing portion 1 to enclose the semiconductor device.
The first and second housing portions 1 and 7 are sealed to form a gas-tight housing by a sleeve or annular member 71 having a flange in its lower periphery. The sleeve 71 comprises electrically conductive material such as, for example, a suitable metal, and is affixed to the cylindrical side of the second housing portion 7 and to the plateshaped part of the first housing portion 1. The sleeve 71 is afiixed to the second housing portion 7 and to the first housing portion 1 by any suitable means such as, for example, solder. A metal coat may be provided on the cylindrical side of the second housing portion 7 to facilitate the soldering of the sleeve 71 to said second housing portion. The second housing portion 7 is aflixed to the first housing portion 1, via the sleeve 71, after the semiconductor body, its first and second contact electrodes, its control electrode and its ancillary components have been positioned on said first housing portion.
A first electrical connector 72, of substantially tubular configuration, passes through the top base of the second housing portion 7 in a gas-tight manner and is electrically insulated from said second housing portion. A first electrical conductor 61 of the first electrical connector 72 extends into the sealed housing of the semiconductor device. A second electrical connector 73, of substantially tubular configuration, passes through the second housing portion 7 in a gas-tight manner and is electrically insulated from said second housing portion and from the first electrical connector 72 and the first electrical connector 61 thereof. A second electrical conductor 9 of the second electrical connector 73 is in electrical contact with the control electrode 32 of the semiconductor device.
The first electrical conductor 61 of the first electrical connector 72 is in electrical contact with an electrically conductive body 6 which is interposed between a plurality of spring discs and the top of the second housing portion 7. The electrically conductive body 6 is of annular configuration and comprises a suitably conductive material. The electrically conductive body 6 may comprise a metal coat on part of the inside surface of the top of the second housing portion 7. The first electrical conductor 61 of the first electrical connector 72 is in electrical contact with the first contact electrode 31 of the semiconductor device via the electrically conductive body 6, the electrically conductive plurality of spring discs 5 and an electrically conductive pressure member 4.
The pressure member 4 comprises electrically conductive material of substantially annular configuration. The pressure member 4 is supported on the first contact electrode 31 and has an aperture formed therethrough in the area of and corresponding with the aperture formed through said first contact electrode. The second electrical conductor 9 thus passes through each of the electrically conductive body 6, the plurality of spring disc 5 and the pressure member 4 without contacting any of these components.
After the semiconductor device and its housing have been assembled, the first electrical conductor 6.1 is clamped, crimped or compressed in the first electrical connector 72 so that said first electrical conductor and connector are electrically connected to each other. The first electrical connector 72 is hermetically sealed at its terminus outside the housing. The first electrical conductor 61 of the first electrical connector 72 is preferably afiixed to the electrically conductive body 6 and thereby maintains said electrically conductive body in position against an abutment 74 formed on the inside surface of the top of the second housing portion 7.
The plurality of spring discs 5 urge the pressure piece 4 against the first contact electrode 31 of the semiconductor device. The spring discs 5 thus insure an adequate contact pressure of at least 1 kp. per mm. The spring discs 5 also function, as hereinbefore described, to conduct electrical current from the first electrical conductor 61 of the first electrical connector 72 to the first contact electrode 31 of the semiconductor device. The spring discs 5 preferably comprise conventional spring steel and are preferably coated with silver, or other suitable electrically conductive material, to enhance their conductivity. The electrical conductivity of each of the electrically conductive body 6 and the pressure member 4 may also be enhanced by coating each of these components with silver or other suitable material. The silver coating on the various components enhances the electrical contact between them.
The second electrical conductor 9 of the second electrical connector 73 is clamped, crimped or compressed in said second electrical connector in a manner similar to the clamping of the first electrical conductor 61 and the first electrical connector 72. The second electrical connector 72 is hermetically sealed at its terminus outside the housing, similarly to the first electrical connector 72. The second electrical conductor 9 of the second electrical connector 73 thus is in electrical contact with the control electrode of the semiconductor device, as hereinbefore described, and is spaced from, and therefore insulated from, each of the components through which it passes.
While the invention has been described by means of a specific example and in a specific embodiment, we do not wish to be limited thereto, for obvious modifications will occur to those skilled in the art without departing from the spirit and scope of the invention.
We claim:
1. A controllable semiconductor device, comprising:
a semiconductor body of wafer type having a pair of spaced opposed substantially planar surfaces;
a first contact electrode having an aperture formed therethrough in electrical contact with one of the surfaces of said semiconductor body;
a control electrode passing through the aperture through said first electrode in electrical contact with said one of the surfaces of said semiconductor body;
a second contact electrode in electrical contact with the other of the surfaces of said semiconductor body;
a first housing portion having a substantially planar contact surface supporting the second contact electrode;
a second housing portion of substantially hollow cylindrical configuration having a closed top base and forming a gas-tight housing with said first housing portion enclosing said semiconductor body;
an electrically conductive pressure member supported on said first contact electrode and having an aperture formed therethrough in the area of and corresponding with the aperture formed through said first contact electrodes;
spring disc means in the housing clamping said semiconductor body, said first and second electrodes and said pressure member between said first housing portion and said second housing portion;
an electrically conductive body in said housing interposed between said spring disc means and the top of said second housing portion;
a first electrical connector passing through said second housing portion in a gas-tight manner and electrically insulated from said second housing portion and in electrical contact with said conductive body and with said first contact electrode via said conductive body, said spring disc means and said pressure member; and
a second electrical connector passing through said second housing portion in a gas-tight manner and electrically insulated from said second housing portion and from said first electrical connector and in electrical contact with said control electrode.
2. A controllable semiconductor device as claimed in claim 1, wherein said second housing portion comprises electrical insulating material and said conductive body abuts said second housing portion on one side and abuts said spring disc means on the other side, said conductive body supporting said first electrical conductor.
3. A controllable semiconductor device as claimed in claim 1, further comprising a sleeve of electrically conductive material affixed to each of said first and second housing portions and sealing said first housing portion to said second housing portion around the open base area of said second housing portion.
4. A controllable semiconductor device as claimed in claim 1, wherein at least the cylindrical side of said second housing portion comprises electrical insulating material, and further comprising a sleeve of electrically conductive material affixed to said second housing portion at its side and affixed to said first housing portion and sealing said first housing portion to said second housing portion around the open base area of said second housing portion.
5. A controllable semiconductor device as claimed in claim 1, further comprising a coating of good electrically conductive material on each electrically conducting surface.
6. A controllable semiconductor device as claimed in claim 1, wherein said second housing portion comprises electrical insulating material.
7. A controllable semiconductor device as claimed in claim 3, wherein said sleeve comprises metal of substantially annular configuration and is affixed to each of said first and second housing portions by solder.
8. A controllable semiconductor device as claimed in claim 3, further comprising a metal coat on the side of said second housing portion, and wherein said sleeve comprises metal of substantially annular configuration and is affixed to the metal coat on the second housing portion by solder and to said first housing portion by solder.
9. A controllable semiconductor device as claimed in claim '6, wherein said electrically conductive body comprises a metal coat on part of the inside surface of the top of said second housing portion.
10. A controllable semiconductor device as claimed in claim 6, wherein said electrically conductive body comprises an annular metal body.
References Cited UNITED STATES PATENTS JAMES D. KALLAM, Primary Examiner R. F. POLISSACK, Assistant Examiner us. (21. X.R, 317-435
US3559004D 1968-02-08 1969-01-28 Connector structure for housing of pressure-biased semiconductor device Expired - Lifetime US3559004A (en)

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DE19681639402 DE1639402C3 (en) 1968-02-08 1968-02-08
DE1968S0114041 DE1639402B2 (en) 1968-02-08 1968-02-08 CONTROLLED SEMICONDUCTOR COMPONENT

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3708722A (en) * 1970-12-18 1973-01-02 Erie Technological Prod Inc Semiconductor device with soldered terminals and plastic housing and method of making the same
US3869703A (en) * 1970-03-16 1975-03-04 Philips Corp Semiconductor device having an improved supply lead support
DE2945972A1 (en) * 1978-11-27 1980-06-04 Gen Electric SEMICONDUCTOR UNIT WITH AN UPPER CHAMBER FOR INCREASING STRENGTH AND SEALING
US4882612A (en) * 1986-05-17 1989-11-21 Kabushiki Kaisha Toshiba Power semiconductor device
US6040625A (en) * 1997-09-25 2000-03-21 I/O Sensors, Inc. Sensor package arrangement

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3869703A (en) * 1970-03-16 1975-03-04 Philips Corp Semiconductor device having an improved supply lead support
US3708722A (en) * 1970-12-18 1973-01-02 Erie Technological Prod Inc Semiconductor device with soldered terminals and plastic housing and method of making the same
DE2945972A1 (en) * 1978-11-27 1980-06-04 Gen Electric SEMICONDUCTOR UNIT WITH AN UPPER CHAMBER FOR INCREASING STRENGTH AND SEALING
US4882612A (en) * 1986-05-17 1989-11-21 Kabushiki Kaisha Toshiba Power semiconductor device
US6040625A (en) * 1997-09-25 2000-03-21 I/O Sensors, Inc. Sensor package arrangement

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BE727717A (en) 1969-07-01
FR2001524A1 (en) 1969-09-26
DE1639402A1 (en) 1970-02-26
DE1639402B2 (en) 1976-12-16
CH484515A (en) 1970-01-15

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