JPH039622B2 - - Google Patents

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Publication number
JPH039622B2
JPH039622B2 JP59235677A JP23567784A JPH039622B2 JP H039622 B2 JPH039622 B2 JP H039622B2 JP 59235677 A JP59235677 A JP 59235677A JP 23567784 A JP23567784 A JP 23567784A JP H039622 B2 JPH039622 B2 JP H039622B2
Authority
JP
Japan
Prior art keywords
electrode
control electrode
main
gate
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59235677A
Other languages
Japanese (ja)
Other versions
JPS61113249A (en
Inventor
Takeshi Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP59235677A priority Critical patent/JPS61113249A/en
Priority to DE3538815A priority patent/DE3538815C3/en
Priority to FR858516575A priority patent/FR2572852B1/en
Publication of JPS61113249A publication Critical patent/JPS61113249A/en
Publication of JPH039622B2 publication Critical patent/JPH039622B2/ja
Granted legal-status Critical Current

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    • H—ELECTRICITY
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    • H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
    • H—ELECTRICITY
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    • H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
    • H01L23/051—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
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  • Engineering & Computer Science (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Thyristors (AREA)
  • Die Bonding (AREA)

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、環状の制御電極を有する半導体装
置における制御電極取り出し構造の改良に関する
ものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an improvement in a control electrode extraction structure in a semiconductor device having an annular control electrode.

〔従来の技術〕[Conventional technology]

大容量のゲートターンオフサイリスタやトラン
ジスタにおいては、大容量化に伴つて制御用電極
（ゲート又はベース）に流す電流が大きくなり、
最近では数10A〜数100Aの電流を流すものも実
用化されている。特に大容量ゲートターンオフサ
イリスタでは、ターンオフ時に必要なゲート逆電
流が大きく、しかも瞬時に均一に電流を流す必要
があるため、ゲート・カソード間のインピーダン
スを極力小さくする工夫がなされている。例えば
ゲート電極の取り出し部分の形状を環状にして取
り出し部分からエミツタ領域までの距離の短縮と
電流分布の均一化、軽減が図られている。 In large capacity gate turn-off thyristors and transistors, the current flowing through the control electrode (gate or base) increases as the capacity increases.
Recently, devices that flow currents of several 10A to several 100A have been put into practical use. In particular, large-capacity gate turn-off thyristors require a large gate reverse current during turn-off, and the current must flow instantaneously and uniformly, so efforts are made to minimize the impedance between the gate and cathode. For example, the shape of the lead-out portion of the gate electrode is annular to shorten the distance from the lead-out portion to the emitter region and to make the current distribution uniform and light.

第３図は従来の半導体装置の第１例を示し、こ
れは上記環状のゲート電極構造を有するゲートタ
ーンオフサイリスタのエレメントの平面パターン
を示す。図中、１はエレメント、１ａはシリコン
ウエハ、１ｂはシリコンウエハ１ａを支持する補
強板、１ｃはゲート電極、１ｄはカソード電極、
１ｅ，１ｆはゲートの集電電極部分である。 FIG. 3 shows a first example of a conventional semiconductor device, which shows a planar pattern of an element of a gate turn-off thyristor having the above-mentioned annular gate electrode structure. In the figure, 1 is an element, 1a is a silicon wafer, 1b is a reinforcing plate that supports the silicon wafer 1a, 1c is a gate electrode, 1d is a cathode electrode,
1e and 1f are current collecting electrode portions of the gate.

またゲート配線部分の電気抵抗を低くしてゲー
トに大電流を供給する方法としては、従来ゲート
取り出し用電極をエレメントに加圧接触させる方
法があり、この方法はゲートがエレメントの中央
にあるセンターゲート構造のサイリスタや、大容
量のトランジスタ等に用いた場合非常に有効であ
る。 In addition, as a method of supplying a large current to the gate by lowering the electric resistance of the gate wiring part, there is a conventional method of bringing the gate extraction electrode into pressure contact with the element. It is very effective when used in structural thyristors, large capacity transistors, etc.

第４図は従来の半導体装置の第２例を示し、こ
れは上記第１例に示すエレメントを外囲器の中に
装着し、上記ゲート取り出し用電極をエレメント
に加圧接触させる構造を有するサイリスタの断面
構造図である。図中、１はサイリスタエレメン
ト、２は挿入板、３は外部陰電極、４はゲート取
り出しリード、５は該ゲート取り出しリード４及
び挿入板２を外部陰極電極３に対して位置決めす
る絶縁性支持部材、６はゲート取り出しリード４
の先端部４ａを絶縁性支持部材５を介してサイリ
スタエレメント１に加圧するバネ、７は上記ゲー
ト取り出しリード４を外部陰極電極３と絶縁する
ための保護管、８は外部陽極電極、９はサイリス
タエレメント１を支持するセラミツク筒、１０は
外陰極電極３をセラミツク筒９に固着支持する陰
極側フランジ、１１は外部陽極電極８をセラミツ
ク筒９に固着支持する陽極側フランジ、１２は外
部ゲート電極を示す。 FIG. 4 shows a second example of a conventional semiconductor device, which is a thyristor having a structure in which the element shown in the first example is mounted in an envelope and the gate extraction electrode is brought into pressure contact with the element. FIG. In the figure, 1 is a thyristor element, 2 is an insertion plate, 3 is an external cathode, 4 is a gate lead, and 5 is an insulating support member for positioning the gate lead 4 and the insertion plate 2 with respect to the external cathode electrode 3. , 6 is gate extraction lead 4
7 is a protective tube for insulating the gate lead 4 from the external cathode electrode 3, 8 is an external anode electrode, and 9 is a thyristor element. A ceramic cylinder supports the element 1, 10 is a cathode side flange that firmly supports the outer cathode electrode 3 on the ceramic cylinder 9, 11 is an anode side flange that firmly supports the external anode electrode 8 on the ceramic cylinder 9, and 12 is the external gate electrode. show.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

この従来の第２例によるサイリスタでは、上記
絶縁性支持部材５はアルミナ焼結体等を用いる必
要があるため寸法精度が悪く、そのため外部陰極
電極３と該絶縁性支持部材５及びゲート取り出し
リード４とのクリアランスを大きくせざるを得
ず、位置決め精度が悪くなり、その結果この従来
のゲート取り出し構造は高精度な位置決めを要す
るゲートターンオフサイリスタに使用するには精
度上不十分な場合があつた。 In the thyristor according to the second conventional example, the insulating support member 5 has poor dimensional accuracy because it is necessary to use an alumina sintered body, etc. As a result, this conventional gate extraction structure has sometimes been insufficient in terms of accuracy to be used in gate turn-off thyristors that require highly accurate positioning.

また、環状ゲート構造のゲートターンオフサイ
リスタの場合に、上記従来の第２例による構造を
採用するには、ゲート取り出しリード４のエレメ
ント１と接触する先端部４ａを環状にする必要が
あるが、この環状部分を容易かつ高精度に位置決
めできる加圧接触形ゲート構造は実用化されてい
なかつた。 In addition, in the case of a gate turn-off thyristor having an annular gate structure, in order to adopt the structure according to the second conventional example, it is necessary to make the tip 4a of the gate lead 4 in contact with the element 1 into an annular shape. A pressure contact type gate structure that allows easy and highly accurate positioning of the annular portion has not been put into practical use.

本発明はこのような従来のゲート取り出し構造
の欠点を除去するためになされたもので、性御電
極の取り出しを容易に、かつ高精度で所定位置に
おいて行なえ、信頼性を向上できる半導体装置を
提供することを目的としている。 The present invention has been made in order to eliminate the drawbacks of the conventional gate extraction structure, and provides a semiconductor device in which the control electrode can be extracted easily and precisely at a predetermined position, and the reliability can be improved. It is intended to.

〔問題点を解決するための手段〕[Means for solving problems]

本発明は、半導体装置において、半導体基体の
制御電極を外部制御電極と接続するための略環状
の制御電極取り出し電極を設け、該制御電極取り
出し電極の下面の接触部を除く部分をフツ素樹脂
を主成分とする絶縁制皮膜で被覆し、上記接触部
を上記制御電極に圧接せしめるようにしたもので
ある。 The present invention provides a semiconductor device with a substantially annular control electrode lead-out electrode for connecting a control electrode of a semiconductor substrate with an external control electrode, and a portion of the lower surface of the control electrode lead-out electrode excluding the contact portion is coated with fluororesin. It is coated with an insulating film as a main component, and the contact portion is brought into pressure contact with the control electrode.

〔作用〕[Effect]

本発明では、制御電極取り出し電極が大きな面
積でもつてゲートと加圧状態で当接し、ゲート取
り出し部の電位ドロツプが極めて小さくなり、そ
のため電流分布が均一になり、また上記取り出し
電極は所定位置に精度よく位置決めされる。 In the present invention, the control electrode lead-out electrode contacts the gate under pressure even if it has a large area, and the potential drop at the gate lead-out portion is extremely small, resulting in a uniform current distribution. Well positioned.

〔実施例〕〔Example〕

以下、この発明の実施例を図について説明す
る。 Embodiments of the present invention will be described below with reference to the drawings.

第１図は本発明の一実施例による大容量ゲート
ターンオフサイリスタの構造を示し、図中、１は
半導体基体であるサイリスタエレメントであり、
これの第１主面（図示上面）には第１主電極であ
るカソード電極及び制御電極であるゲート電極が
形成され、またその第２主面（図示下面）には第
２主電極であるアノード電極が形成されている。
１４は上記エレメント１のカソード電極の外周部
と第１外部主電極である外部陰極電極２３との間
に挿入された外側挿入板、１５はエレメント１の
カソード電極の内側部と外部陰極電極２３との間
に挿入された内側挿入板である。そして該外部陰
極電極２３の第１主面側には環状の保持溝２３ａ
が凹設され、該保持溝２３ａ内には環状のゲート
取り出し電極１３が上下動自在に挿入され、該取
り出し電極１３は、これと保持溝２３ａと底面と
の間に挿入されたスプリング１６により図示下方
に付勢されてエレメント１のゲート電極に圧接し
ている。 FIG. 1 shows the structure of a large-capacity gate turn-off thyristor according to an embodiment of the present invention, in which numeral 1 represents a thyristor element which is a semiconductor substrate;
A cathode electrode, which is a first main electrode, and a gate electrode, which is a control electrode, are formed on the first main surface (upper surface in the drawing), and an anode, which is a second main electrode, is formed on the second main surface (lower surface in the drawing). Electrodes are formed.
14 is an outer insertion plate inserted between the outer circumference of the cathode electrode of the element 1 and the outer cathode electrode 23 which is the first outer main electrode; 15 is an outer insertion plate inserted between the inner part of the cathode electrode of the element 1 and the outer cathode electrode 23; This is an inner insertion plate inserted between the two. An annular holding groove 23a is formed on the first main surface side of the external cathode electrode 23.
An annular gate take-out electrode 13 is vertically movably inserted into the holding groove 23a, and the take-out electrode 13 is supported by a spring 16 inserted between the holding groove 23a and the bottom surface. It is urged downward and is brought into pressure contact with the gate electrode of element 1.

第２図は上記ゲート取り出し電極１３の構造を
示す断面図である。図中、１３ａはゲート取り出
し電極１３の取り出し電極本体である環状金属
部、１３ｄは上記環状金属部１３ａの下面全周に
沿つて突設されたエレメント１との接触部、１３
ｃは環状金属部１３ａのろう付部１３ｅにろう付
された制御リード部であるワイヤ部、１３ｂは上
記環状金属部１３ａ表面の上記接触部１３ｄ及び
ろう付部１３ｅを除く部分に被着されたフツ素樹
脂を主成分とする絶縁性皮膜である。 FIG. 2 is a sectional view showing the structure of the gate lead-out electrode 13. In the figure, 13a is a ring-shaped metal part which is the main body of the gate lead-out electrode 13; 13d is a contact part with the element 1 that protrudes along the entire lower surface of the ring-shaped metal part 13a;
A wire portion c is a control lead portion brazed to the brazing portion 13e of the annular metal portion 13a, and a wire portion 13b is attached to a portion of the surface of the annular metal portion 13a excluding the contact portion 13d and the brazing portion 13e. It is an insulating film whose main component is fluororesin.

次に上記ゲート取り出し電極１３の製造方法を
説明する。 Next, a method of manufacturing the gate lead-out electrode 13 will be explained.

(1) まず環状金属部１３ａ及び接触部１３ｄを所
望の精度にて切削加工して形成し、ろう付部１
３ｅにワイヤ部１３ｃをろう付けする。ここで
ワイヤ部１３ｃの材質は純銀（99.99％）とし、
ろう付は銀銅ろうを用いて水素中で行なう。(1) First, the annular metal part 13a and the contact part 13d are formed by cutting with desired precision, and the brazed part 1
The wire portion 13c is brazed to the wire portion 3e. Here, the material of the wire part 13c is pure silver (99.99%),
Brazing is performed in hydrogen using silver-copper solder.

(2) 次に上記ろう付の完了した環状金属部１３ａ
のエレメント１との接触部１３ｄをマスキング
した後、フツ素樹脂、例えばテフロン等を環状
金属部１３ａを包み込むようにコーテイングす
る。このようにして所望のゲート取り出し電極
１３が得られる。(2) Next, the annular metal part 13a after the above-mentioned brazing has been completed.
After masking the contact portion 13d with the element 1, a fluororesin such as Teflon is coated so as to wrap around the annular metal portion 13a. In this way, the desired gate extraction electrode 13 is obtained.

次に作用効果について説明する。 Next, the effects will be explained.

本実施例のゲートターンオフサイリスタでは、
環状金属部１３ａの断面積が大きので、該環状金
属部１３ａの電気抵抗が極めて小さく、またワイ
ヤ部１３ｃの線径を十分に大きいので、ゲート取
り出し電極１３の電位ドロツプを極めて小さくす
ることができ、そのため電流分布の均一性も向上
し、その結果、ゲートターンオフサイリスタの遮
断能力を向上することができる。 In the gate turn-off thyristor of this example,
Since the cross-sectional area of the annular metal part 13a is large, the electrical resistance of the annular metal part 13a is extremely small, and the wire diameter of the wire part 13c is sufficiently large, so that the potential drop of the gate lead-out electrode 13 can be made extremely small. Therefore, the uniformity of current distribution is improved, and as a result, the interrupting ability of the gate turn-off thyristor can be improved.

また本実施例では外側、内側挿入板１４，１５
は各々ゲート取り出し電極１３の外周壁面、内周
壁面によつて位置決めされるので、組立作業が極
めて良い。また本実施例のゲート取り出し電極１
３は従来のゲート圧接構造における絶縁性支持部
材とゲート取り出し用ワイヤとの両方の機能を兼
ね備えており、従つて従来のようなこれらを結合
させる作業も不要となり、作業性を向上できると
同時に、本実施例では寸法精度の高い環状金属部
１３ａにより、取り出し電極１３の位置決め精度
が支配されるので、従来問題であつた位置決め精
度も極めて良好となる。 In addition, in this embodiment, the outer and inner insertion plates 14 and 15
are positioned by the outer circumferential wall surface and inner circumferential wall surface of the gate lead-out electrode 13, respectively, so assembly work is extremely easy. In addition, the gate lead-out electrode 1 of this embodiment
3 has the functions of both the insulating support member and the wire for taking out the gate in the conventional gate press-contact structure, so there is no need for the conventional work of joining these together, and at the same time, work efficiency can be improved. In this embodiment, the positioning accuracy of the take-out electrode 13 is controlled by the annular metal portion 13a having high dimensional accuracy, so that the positioning accuracy, which was a problem in the prior art, is also extremely improved.

また、本実施例では、取り出し電極本体１３の
絶縁性皮膜にフツ素樹脂を使用したので、この絶
縁性皮膜のコストを低減できる。 Furthermore, in this embodiment, since fluororesin is used for the insulating film of the extraction electrode main body 13, the cost of this insulating film can be reduced.

なお上記実施例では、ゲートターンオフサイリ
スタについて述べたが、本発明は環状の制御電極
を有する大容量の半導体装置、例えば大電力トラ
ンジスタやゲート補助ターンオフサイリスタ等に
ついても同様に適用でき、同様の効果をもたらす
ことができる。さらに、本発明は環状の制御電極
を取り出すための構造だけでなく、従来のセンタ
ーゲート構造のゲート取り出し電極についても適
用でき、このようにすれば作業性及び位置決め精
度を向上できる。 In the above embodiment, a gate turn-off thyristor was described, but the present invention can be similarly applied to a large-capacity semiconductor device having an annular control electrode, such as a high-power transistor or a gate-auxiliary turn-off thyristor, and similar effects can be obtained. can bring. Furthermore, the present invention can be applied not only to a structure for taking out an annular control electrode, but also to a gate taking-out electrode of a conventional center gate structure, and in this way, workability and positioning accuracy can be improved.

〔発明の効果〕〔Effect of the invention〕

以上のように、本発明に係る半導体装置によれ
ば、半導体基体の制御電極を外部制御電極に接続
する略環状の制御電極取り出し電極を設け、該制
御電極取り出し電極の下面の接触部を除く部分を
フツ素樹脂を主成分とする絶縁性皮膜で被覆し、
上記接触部を制御電極に圧接せしめるようにした
ので、環状ゲートを有する半導体基体に対する極
めて高精度で信頼性が高く、作業性の良いゲート
の取り出し構造が得られる効果があり、また絶縁
材料のコストを低減して装置のコストアツプを防
止できる効果がある。 As described above, according to the semiconductor device of the present invention, a substantially annular control electrode extraction electrode is provided for connecting the control electrode of the semiconductor substrate to an external control electrode, and the portion of the lower surface of the control electrode extraction electrode excluding the contact portion is provided. is coated with an insulating film whose main component is fluororesin,
Since the contact portion is brought into pressure contact with the control electrode, it is possible to obtain a gate extraction structure with extremely high precision, high reliability, and good workability for a semiconductor substrate having an annular gate, and also to reduce the cost of insulating materials. This has the effect of reducing equipment costs and preventing increases in equipment costs.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は本発明の一実施例によるゲートターン
オフサイリスタの断面図、第２図はそのゲート取
り出し電極部分の断面図、第３図は環状ゲート構
造を有するゲートターンオフサイリスタのカソー
ド・ゲートパターンを示す平面図、第４図は従来
のセンターゲート加圧方式のサイリスタの構造を
示す断面図である。 １……エレメント（半導体基体）、８……外部
陽極電極（第２外部主電極）、１２……外部制御
電極、１３……ゲート取り出し電極（制御電極取
り出し電極）、１３ａ……環状金属部（取り出し
電極本体）、１３ｂ……絶縁性皮膜、１３ｃ……
ワイヤ部（制御リード部）、１３ｄ……接触部、
１６……スプリング、２３……外部陰極電極（第
１外部主電極）、２３ａ……保持溝。なお図中、
同一符号は同一又は相当部分を示す。 FIG. 1 is a cross-sectional view of a gate turn-off thyristor according to an embodiment of the present invention, FIG. 2 is a cross-sectional view of a gate lead-out electrode portion thereof, and FIG. 3 is a cathode/gate pattern of a gate turn-off thyristor having an annular gate structure. The plan view and FIG. 4 are cross-sectional views showing the structure of a conventional center gate pressurizing type thyristor. DESCRIPTION OF SYMBOLS 1... Element (semiconductor base), 8... External anode electrode (second external main electrode), 12... External control electrode, 13... Gate extraction electrode (control electrode extraction electrode), 13a... Annular metal part ( take-out electrode body), 13b...insulating film, 13c...
Wire part (control lead part), 13d...contact part,
16... Spring, 23... External cathode electrode (first external main electrode), 23a... Holding groove. In addition, in the figure,
The same reference numerals indicate the same or equivalent parts.

Claims (1)

【特許請求の範囲】 １ その第１、第２主面に第１，第２主電極を、
かつ第１主面に制御電極を有する半導体基体と、
該半導体基体の第１、第２主電極に電気的に接続
して上記第１、第２主面に配設された第１、第２
外部主電極と、上記半導体基体の制御電極に接続
されるべき外部制御電極と、上記制御電極を上記
外部制御電極に接続する制御電極取り出し電極と
を備えた半導体装置において、上記制御電極取り
出し電極はその下面に接続部を有する略環状の取
り出し電極本体と、上記外部制御電極に接続され
た制御リード部とからなるものであり、上記取り
出し電極本体の上記接触部を除く部分にはフツ素
樹脂を主成分とする絶縁性皮膜が被着され、上記
取り出し電極本体はその接触部にて上記半導体基
体の制御電極に圧接されていることを特徴とする
半導体装置。 ２ 上記取り出し電極本体の上記制御電極への圧
接は、上記第１外部主電極に凹設された環状の保
持溝に上記取り出し電極本体とともに挿入された
スプリングによつてなされていることを特徴とす
る特許請求の範囲第１項記載の半導体装置。 ３ 上記接触部は、上記取り出し電極本体の全周
に沿う環状のものであることを特徴とする特許請
求の範囲第１項又は第２項記載の半導体装置。 ４ 上記接触部は、上記取り出し電極本体の全周
に沿つて配置された複数の円弧状部からなること
を特徴とする特許請求の範囲第１項又は第２項記
載の半導体装置。 ５ 上記接触部は、その表面に銀又は金メツキが
施されていることを特徴とする特許請求の範囲第
１項ないし第４項のいずれかに記載の半導体装
置。 ６ 上記制御電極取り出し電極は、銅又はアルミ
ニウムを主成分とする電気良導体を用いて形成さ
れていることを特徴とする特許請求の範囲第１項
ないし第５項のいずれかに記載の半導体装置。[Claims] 1. First and second main electrodes on the first and second main surfaces,
and a semiconductor substrate having a control electrode on the first main surface;
first and second main electrodes electrically connected to the first and second main electrodes of the semiconductor substrate and disposed on the first and second main surfaces;
In a semiconductor device comprising an external main electrode, an external control electrode to be connected to a control electrode of the semiconductor substrate, and a control electrode extraction electrode that connects the control electrode to the external control electrode, the control electrode extraction electrode is It consists of a generally annular lead-out electrode body having a connection part on its lower surface, and a control lead part connected to the external control electrode, and the part of the lead-out electrode body other than the contact part is coated with fluororesin. 1. A semiconductor device, characterized in that an insulating film is deposited as a main component, and the lead-out electrode body is pressed into contact with a control electrode of the semiconductor substrate at a contact portion thereof. 2. Pressure contact of the extraction electrode body to the control electrode is achieved by a spring inserted together with the extraction electrode body into an annular holding groove recessed in the first external main electrode. A semiconductor device according to claim 1. 3. The semiconductor device according to claim 1 or 2, wherein the contact portion is annular along the entire circumference of the extraction electrode main body. 4. The semiconductor device according to claim 1 or 2, wherein the contact portion comprises a plurality of arcuate portions arranged along the entire circumference of the extraction electrode main body. 5. The semiconductor device according to any one of claims 1 to 4, wherein the surface of the contact portion is plated with silver or gold. 6. The semiconductor device according to claim 1, wherein the control electrode extraction electrode is formed using a good electrical conductor whose main component is copper or aluminum.
JP59235677A 1984-11-08 1984-11-08 Semiconductor device Granted JPS61113249A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP59235677A JPS61113249A (en) 1984-11-08 1984-11-08 Semiconductor device
DE3538815A DE3538815C3 (en) 1984-11-08 1985-10-31 Semiconductor device
FR858516575A FR2572852B1 (en) 1984-11-08 1985-11-08 SEMICONDUCTOR DEVICE IN PARTICULAR THYRISTOR COMPRISING AN ELECTRODE FOR ACCESS TO THE CONTROL ELECTRODE

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59235677A JPS61113249A (en) 1984-11-08 1984-11-08 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS61113249A JPS61113249A (en) 1986-05-31
JPH039622B2 true JPH039622B2 (en) 1991-02-08

Family

ID=16989566

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59235677A Granted JPS61113249A (en) 1984-11-08 1984-11-08 Semiconductor device

Country Status (3)

Country Link
JP (1) JPS61113249A (en)
DE (1) DE3538815C3 (en)
FR (1) FR2572852B1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4227063A1 (en) * 1992-08-15 1994-02-17 Abb Research Ltd High-performance semiconductor component that can be switched off
US5539232A (en) * 1994-05-31 1996-07-23 Kabushiki Kaisha Toshiba MOS composite type semiconductor device
DE19505387A1 (en) * 1995-02-17 1996-08-22 Abb Management Ag Pressure contact housing for semiconductor components
DE19530264A1 (en) * 1995-08-17 1997-02-20 Abb Management Ag Power semiconductor module

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3559001A (en) * 1968-08-21 1971-01-26 Motorola Inc Semiconductor housing assembly
US3992717A (en) * 1974-06-21 1976-11-16 Westinghouse Electric Corporation Housing for a compression bonded encapsulation of a semiconductor device
FR2440077A1 (en) * 1978-10-23 1980-05-23 Transformation En Cie Indle Semiconductor power module casing - with metal discs pressed against O=ring by insulating lipped clamp ring
JPS56131955A (en) * 1980-09-01 1981-10-15 Hitachi Ltd Semiconductor device
JPS58148433A (en) * 1982-02-26 1983-09-03 Mitsubishi Electric Corp Semiconductor device
JPS60150670A (en) * 1984-01-17 1985-08-08 Mitsubishi Electric Corp Semiconductor device
JPS60194565A (en) * 1984-03-15 1985-10-03 Mitsubishi Electric Corp Semiconductor device

Also Published As

Publication number Publication date
DE3538815C3 (en) 1994-04-14
FR2572852B1 (en) 1990-10-05
DE3538815A1 (en) 1986-05-15
DE3538815C2 (en) 1994-04-14
FR2572852A1 (en) 1986-05-09
JPS61113249A (en) 1986-05-31

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