GB1196834A - Improvement of Electrode Structure in a Semiconductor Device. - Google Patents

Improvement of Electrode Structure in a Semiconductor Device.

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Publication number
GB1196834A
GB1196834A GB14541/68A GB1454168A GB1196834A GB 1196834 A GB1196834 A GB 1196834A GB 14541/68 A GB14541/68 A GB 14541/68A GB 1454168 A GB1454168 A GB 1454168A GB 1196834 A GB1196834 A GB 1196834A
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United Kingdom
Prior art keywords
layer
layers
refractory metal
apertures
etched
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB14541/68A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of GB1196834A publication Critical patent/GB1196834A/en
Expired legal-status Critical Current

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Abstract

1,196,834. Semi-conductor devices. HITACHI Ltd. 26 March, 1968 [29 March, 1967], Nov., 14541/68. Heading H1K. An electrode applied to a surface of a semiconductor wafer 22 having an insulating covering 32 comprises an Al layer 34 contacting the substrate surface and extending across the insulation 32, a layer 38 of a refractory metal; i.e. Mo, Cr, Ti, W or Ta; also extending across the insulation 32 and contacting the A1 layer 34, and a further metal layer 42; e.g. of Ag. Au, Ni or Cu: in contact with the layer 38. The refractory metal layer 38 is, in general, less finely shaped than the A1 layer 34, since it is less easily etched into detailed configurations. Thus in the Si transistor shown the A1 layer 34 forms a comb-like base electrode interdigitated with a similar comb-like A1 emitter electrode 36 connected to a series of strip-like emitter regions and on which are provided a relatively large-area rectangular refractory metal layer 40 and a further metal layer 44. The layer 38 is similarly relatively large and rectangular. If the layers 42, 44 are of Au, an Au wire may be thermo-compression bonded thereto. If Ni is used for the layers 42, 44 a solder terminal may be applied thereto, e.g. by dipping. The layers 42, 44 may be positioned so as not to overlie directly the A1 layers 34, 36 (Fig. 8B, not shown). The insulating layer may be of silicon oxide. In further embodiments a second insulating layer (67), Figs. 3C-3F (not shown), e.g. of silicon oxide or nitride or of glass, is applied over the A1 layers (64, 66), and the refractory metal layers (68, 70) are deposited through apertures (69, 71) etched in the layer (67) to overlie parts of the A1 layers (64, 66) and of the first insulating layer (62). The further metal layers (72, 74) are then applied and connection made thereto by thermo-compression bonding or soldering as described above. A final embodiment is described in which the refractory metal layers (110, 112), Figs. 10A- 10D (not shown), are initially applied directly to the unbroken first insulating layer (108), following which apertures are etched through the layer (108) to the active surface of the wafer (102) and the A1 layers (114, 116) are applied to contact both the exposed wafer surface and the refrac. tory metal layers (110, 112) and to overlie parts of the insulation (108). A second insulating layer (118) is deposited, apertures exposing parts of the refractory metal layers (110, 112) are etched therein and Ni layers (124, 126) are deposited in these apertures. Finally the wafer is dipped in solder to apply terminals (128, 130) to the Ni layers (124, 126).
GB14541/68A 1967-03-29 1968-03-26 Improvement of Electrode Structure in a Semiconductor Device. Expired GB1196834A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1907767 1967-03-29

Publications (1)

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GB1196834A true GB1196834A (en) 1970-07-01

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GB14541/68A Expired GB1196834A (en) 1967-03-29 1968-03-26 Improvement of Electrode Structure in a Semiconductor Device.

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GB (1) GB1196834A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2170846A1 (en) * 1972-02-03 1973-09-21 Garyainov Stanislav
FR2178007A1 (en) * 1972-03-27 1973-11-09 Signetics Corp
GB2150754A (en) * 1983-11-30 1985-07-03 Mitsubishi Electric Corp Semiconductor device electrodes
WO1988001102A1 (en) * 1986-07-31 1988-02-11 American Telephone & Telegraph Company Semiconductor devices having improved metallization
EP1366512A1 (en) * 2001-02-09 2003-12-03 International Business Machines Corporation A common ball-limiting metallurgy for i/o sites
WO2008121511A1 (en) * 2007-03-29 2008-10-09 Raytheon Company Method and structure for reducing cracks in a dielectric layer in contact with metal
EP2128740A1 (en) 1998-08-31 2009-12-02 Semiconductor Energy Laboratory Co, Ltd. Display device

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2170846A1 (en) * 1972-02-03 1973-09-21 Garyainov Stanislav
FR2178007A1 (en) * 1972-03-27 1973-11-09 Signetics Corp
GB2150754A (en) * 1983-11-30 1985-07-03 Mitsubishi Electric Corp Semiconductor device electrodes
WO1988001102A1 (en) * 1986-07-31 1988-02-11 American Telephone & Telegraph Company Semiconductor devices having improved metallization
US5356659A (en) * 1986-07-31 1994-10-18 At&T Bell Laboratories Metallization for semiconductor devices
EP2128740A1 (en) 1998-08-31 2009-12-02 Semiconductor Energy Laboratory Co, Ltd. Display device
EP1366512A1 (en) * 2001-02-09 2003-12-03 International Business Machines Corporation A common ball-limiting metallurgy for i/o sites
EP1366512A4 (en) * 2001-02-09 2009-07-08 Ibm A common ball-limiting metallurgy for i/o sites
WO2008121511A1 (en) * 2007-03-29 2008-10-09 Raytheon Company Method and structure for reducing cracks in a dielectric layer in contact with metal
US7863665B2 (en) 2007-03-29 2011-01-04 Raytheon Company Method and structure for reducing cracks in a dielectric layer in contact with metal

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