GB1204805A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
GB1204805A
GB1204805A GB30463/68A GB3046368A GB1204805A GB 1204805 A GB1204805 A GB 1204805A GB 30463/68 A GB30463/68 A GB 30463/68A GB 3046368 A GB3046368 A GB 3046368A GB 1204805 A GB1204805 A GB 1204805A
Authority
GB
United Kingdom
Prior art keywords
layer
screen
transistor
type
conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB30463/68A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of GB1204805A publication Critical patent/GB1204805A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/731—Location prior to the connecting process
    • H01L2224/73101—Location prior to the connecting process on the same surface
    • H01L2224/73103—Bump and layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8119—Arrangement of the bump connectors prior to mounting
    • H01L2224/81191—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed only on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/818—Bonding techniques
    • H01L2224/81801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12036—PN diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19043—Component type being a resistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)

Abstract

1,204,805. Semi-conductor devices; circuit assemblies. HITACHI Ltd. 26 June, 1968 [7 July, 1967], No. 30463/68. Headings H1K and H1R. A semi-conductor device is provided with an electrode having a conductive track extending to a point at which it is not covered by a conductive layer insulated from and overlying the electrode. The conductive layer constitutes a protective screen for the active area of the semiconductor device and overlies an insulating layer which isolates it from the electrodes and from the surface of the semi-conductor wafer. The screen protects the insulating layer from moisture and prevents the accumulation of surface charges. As shown, Fig. 2, a planar transistor is produced by epitaxially depositing a high resistivity N-type silicon layer 23 on an N+ type substrate 22 and forming a P-type base region 24, an N+ type emitter region 25 and an N- type collector contact region 26 by diffusion using silicon oxide masking layer 27. Conductive tracks 28, 29, 30 are applied to the collector, base and emitter regions the latter two tracks extending over the oxide layer to points outside the active area of the device. A second insulating layer 31, for example of a silicate glass, is deposited over the surface, windows are formed to expose the conductive tracks 28, 29, 30, and contact pads 32, 33 (34) are applied and a conductive screen 35 is applied over the insulating layer 31 so that it covers the edges of the junctions. Solder layers 36, 37, (38) and 39 are applied to the contact pads 32, 33, (34) and the screen 35 respectively. The transistor is face bonded to the conductors of a printed circuit board 40 which contains a high thermal conductivity metal insert 46 to which the screen 35 is bonded to provide improved thermal radiation. The insert 46 may be arranged in contact with a heat radiator. The screen 35 is connected to a source of constant potential, e.g. ground, and if the transistor is operated in the common emitter configuration screen 35 may be connected directly to the emitter of the transistor. One or both of the insulating layers may comprise silicon nitride. In a transistor not intended for face bonding to a printed circuit, Fig. 1 (not shown), the solder layers are omitted and the collector electrode is applied to the N+ type substrate. In a junction isolated integrated circuit, Fig. 3 (not shown) a resistor (52) and a transistor (53) are covered by a common screen layer (56) comprising an aluminium layer (56b) covered with a layer (56a) of gold or solder. The invention may also be applied to PNP transistors, planar diodes, and mesa type devices.
GB30463/68A 1967-07-07 1968-06-26 Semiconductor device Expired GB1204805A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4333467 1967-07-07

Publications (1)

Publication Number Publication Date
GB1204805A true GB1204805A (en) 1970-09-09

Family

ID=12660920

Family Applications (1)

Application Number Title Priority Date Filing Date
GB30463/68A Expired GB1204805A (en) 1967-07-07 1968-06-26 Semiconductor device

Country Status (2)

Country Link
DE (1) DE1764619C3 (en)
GB (1) GB1204805A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3754170A (en) * 1971-08-26 1973-08-21 Sony Corp Integrated circuit device having monolithic rf shields
US4177480A (en) * 1975-10-02 1979-12-04 Licentia Patent-Verwaltungs-G.M.B.H. Integrated circuit arrangement with means for avoiding undesirable capacitive coupling between leads
US4266239A (en) * 1976-04-05 1981-05-05 Nippon Electric Co., Ltd. Semiconductor device having improved high frequency characteristics
US4380115A (en) * 1979-12-06 1983-04-19 Solid State Scientific, Inc. Method of making a semiconductor device with a seal
US4580157A (en) * 1979-06-08 1986-04-01 Fujitsu Limited Semiconductor device having a soft-error preventing structure

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3754170A (en) * 1971-08-26 1973-08-21 Sony Corp Integrated circuit device having monolithic rf shields
US4177480A (en) * 1975-10-02 1979-12-04 Licentia Patent-Verwaltungs-G.M.B.H. Integrated circuit arrangement with means for avoiding undesirable capacitive coupling between leads
US4266239A (en) * 1976-04-05 1981-05-05 Nippon Electric Co., Ltd. Semiconductor device having improved high frequency characteristics
US4580157A (en) * 1979-06-08 1986-04-01 Fujitsu Limited Semiconductor device having a soft-error preventing structure
US4380115A (en) * 1979-12-06 1983-04-19 Solid State Scientific, Inc. Method of making a semiconductor device with a seal

Also Published As

Publication number Publication date
DE1764619C3 (en) 1973-12-06
DE1764619A1 (en) 1971-05-27
DE1764619B2 (en) 1973-05-24

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Legal Events

Date Code Title Description
PS Patent sealed
PE20 Patent expired after termination of 20 years