GB1249812A - Improvements relating to semiconductor devices - Google Patents

Improvements relating to semiconductor devices

Info

Publication number
GB1249812A
GB1249812A GB2713869A GB2713869A GB1249812A GB 1249812 A GB1249812 A GB 1249812A GB 2713869 A GB2713869 A GB 2713869A GB 2713869 A GB2713869 A GB 2713869A GB 1249812 A GB1249812 A GB 1249812A
Authority
GB
United Kingdom
Prior art keywords
base
collector
emitter
oxide layer
conductivity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2713869A
Inventor
Kenneth Lawson Hughes
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ferranti International PLC
Original Assignee
Ferranti PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ferranti PLC filed Critical Ferranti PLC
Priority to GB2713869A priority Critical patent/GB1249812A/en
Publication of GB1249812A publication Critical patent/GB1249812A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/585—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries comprising conductive layers or plates or strips or rods or rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

1,249,812. Semi-conductor devices. FERRANTI Ltd. 13 May, 1970 [29 May, 1969], No. 27138/69. Heading H1K. A transistor 10 formed in a Si wafer of N conductivity material comprises a N conductivity collector 11, a P conductivity base 12 adjacent a major surface 13, and a N conductivity emitter 14 extending to the surface; the base and emitter being formed by diffusion through a Si oxide mask 15. The collector, base, and emitter base junctions comprise depletion layers 16, 17, and the oxide mask also passivates the surface portions of the junctions. Annular and circular apertures 18, 19 for base and emitter contacts are etched through the oxide layer, and a gold collector electrode 20 is provided on opposite face 21. The oxide layer 15 tends to lower the resistivity of the surface of annular portion 22 of the collector, and to diminish the thickness of the surface portions of the collector-base junction depletion layer, but base contact 23 in aperture 18 is connected to a field electrode 24 on the oxide layer overlying the collector portions 22, which is maintained at a potential difference thereto, producing an electric field across the oxide layer and counteracting the reduction in thickness of the depletion layer. This increases the breakdown value of the collector-base junction. The base and emitter contacts 23, 25 in apertures 18, 19 and the field electrode 24 are formed by selectively etching an aluminium layer deposited on the apertured oxide layer 15, and the field electrode 24 is connected to base contact 23 by a narrow aluminium neck or a small diameter wire 26 spanning a minor part of the surface of the depletion layer of PN junction 16, to avoid instability thereof.
GB2713869A 1969-05-29 1969-05-29 Improvements relating to semiconductor devices Expired GB1249812A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB2713869A GB1249812A (en) 1969-05-29 1969-05-29 Improvements relating to semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB2713869A GB1249812A (en) 1969-05-29 1969-05-29 Improvements relating to semiconductor devices

Publications (1)

Publication Number Publication Date
GB1249812A true GB1249812A (en) 1971-10-13

Family

ID=10254841

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2713869A Expired GB1249812A (en) 1969-05-29 1969-05-29 Improvements relating to semiconductor devices

Country Status (1)

Country Link
GB (1) GB1249812A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0021643A1 (en) * 1979-06-08 1981-01-07 Fujitsu Limited Semiconductor device having a soft-error preventing structure
WO1982003949A1 (en) * 1981-05-06 1982-11-11 Hartmut Michel Planar transistor structure
GB2128025A (en) * 1982-09-24 1984-04-18 Hitachi Ltd Protective electrode for electronic device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0021643A1 (en) * 1979-06-08 1981-01-07 Fujitsu Limited Semiconductor device having a soft-error preventing structure
WO1982003949A1 (en) * 1981-05-06 1982-11-11 Hartmut Michel Planar transistor structure
GB2128025A (en) * 1982-09-24 1984-04-18 Hitachi Ltd Protective electrode for electronic device

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