JPS5768078A - Normally off type field effect transistor - Google Patents

Normally off type field effect transistor

Info

Publication number
JPS5768078A
JPS5768078A JP14503380A JP14503380A JPS5768078A JP S5768078 A JPS5768078 A JP S5768078A JP 14503380 A JP14503380 A JP 14503380A JP 14503380 A JP14503380 A JP 14503380A JP S5768078 A JPS5768078 A JP S5768078A
Authority
JP
Japan
Prior art keywords
layer
electrode
normally
extending
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14503380A
Other languages
Japanese (ja)
Inventor
Kazunori Yamamoto
Masamichi Omori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP14503380A priority Critical patent/JPS5768078A/en
Publication of JPS5768078A publication Critical patent/JPS5768078A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To obtain readily a normally OFF type FET by forming a semiconductor layer forming a P-N junction with a semiconductor layer of a semiconductor substrate at the position faced with a gate electrode on the semiconductor layer, extending it to the surface of the substrate, and attaching an electrode thereto. CONSTITUTION:An N type layer 3 is formed on a semiconductor substrate 1, and an ohmic source electrode 4, a drain electrode 5 and a gate electrode 6 forming a Schottky junction are provided. A P type layer 8 is provided in contact with the layer 3 faced with the electrode 6, extends to the main surface 2 side of the substrate 1, and an ohmic control electrode 9 is attached. With this construction, when the gate voltage is O, a depletion layer 7 extending from the Schottky junction does not reach the substate 1, but a P-N junction 10 is reversely biased. Then, a depletion layer 11 extending to the layer 3 is obtained, and when a voltage is controlled, it is connected to a depletion layer 7 to become normally OFF state. Accordingly, a normally OFF FET can be readily obtained even if carrier density is not accurately maintained.
JP14503380A 1980-10-15 1980-10-15 Normally off type field effect transistor Pending JPS5768078A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14503380A JPS5768078A (en) 1980-10-15 1980-10-15 Normally off type field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14503380A JPS5768078A (en) 1980-10-15 1980-10-15 Normally off type field effect transistor

Publications (1)

Publication Number Publication Date
JPS5768078A true JPS5768078A (en) 1982-04-26

Family

ID=15375849

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14503380A Pending JPS5768078A (en) 1980-10-15 1980-10-15 Normally off type field effect transistor

Country Status (1)

Country Link
JP (1) JPS5768078A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58148466A (en) * 1982-02-26 1983-09-03 Mitsubishi Electric Corp Semiconductor device
JPS59191385A (en) * 1983-04-15 1984-10-30 Oki Electric Ind Co Ltd Semiconductor device
JPS6459961A (en) * 1987-08-31 1989-03-07 Toshiba Corp Semiconductor device
JP2007234644A (en) * 2006-02-27 2007-09-13 Toyota Central Res & Dev Lab Inc Diode

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58148466A (en) * 1982-02-26 1983-09-03 Mitsubishi Electric Corp Semiconductor device
JPS59191385A (en) * 1983-04-15 1984-10-30 Oki Electric Ind Co Ltd Semiconductor device
JPS6459961A (en) * 1987-08-31 1989-03-07 Toshiba Corp Semiconductor device
JP2007234644A (en) * 2006-02-27 2007-09-13 Toyota Central Res & Dev Lab Inc Diode

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