JPS5636170A - Manufacture of field-effect semiconductor device - Google Patents

Manufacture of field-effect semiconductor device

Info

Publication number
JPS5636170A
JPS5636170A JP11131579A JP11131579A JPS5636170A JP S5636170 A JPS5636170 A JP S5636170A JP 11131579 A JP11131579 A JP 11131579A JP 11131579 A JP11131579 A JP 11131579A JP S5636170 A JPS5636170 A JP S5636170A
Authority
JP
Japan
Prior art keywords
oxide film
drain current
layer
flow
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11131579A
Other languages
Japanese (ja)
Inventor
Naoki Yokoyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP11131579A priority Critical patent/JPS5636170A/en
Publication of JPS5636170A publication Critical patent/JPS5636170A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To enable easy manufacture with high reproducibility, by causing a drain current to flow through a GaAs layer and by effecting the plasma oxidation of a channel region while monitoring the current to produce an oxide film. CONSTITUTION:An n type GaAs layer 2 is epitaxially grown on a semiinsulating GaAs substrate 1. A plasma-oxidized film 6 is produced. As a result, a depletion layer 5 is extended. In that state, a drain current can be caused to flow. Plasma oxidation is continued to increase the thickness of the oxide film 6 to such an extent that no drain current flows. At that time, the bottom of the depletion layer 5 is in contact with the surface of the substrate 1. After the oxide film 6 is removed, a Schottky gate electrode 4 is manufactured. Said procedure results in providing a normally OFF-type GaAs.SB.FET.
JP11131579A 1979-08-31 1979-08-31 Manufacture of field-effect semiconductor device Pending JPS5636170A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11131579A JPS5636170A (en) 1979-08-31 1979-08-31 Manufacture of field-effect semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11131579A JPS5636170A (en) 1979-08-31 1979-08-31 Manufacture of field-effect semiconductor device

Publications (1)

Publication Number Publication Date
JPS5636170A true JPS5636170A (en) 1981-04-09

Family

ID=14558095

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11131579A Pending JPS5636170A (en) 1979-08-31 1979-08-31 Manufacture of field-effect semiconductor device

Country Status (1)

Country Link
JP (1) JPS5636170A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5892274A (en) * 1981-11-28 1983-06-01 Mitsubishi Electric Corp Manufacture of field effect transistor
EP0723300A2 (en) * 1995-01-18 1996-07-24 Murata Manufacturing Co., Ltd. Semiconductor device with Schattky electrode
EP0744773A2 (en) * 1995-05-25 1996-11-27 Murata Manufacturing Co., Ltd. Semiconductor device having a plasma-processed layer and the method of manufacturing the same

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5892274A (en) * 1981-11-28 1983-06-01 Mitsubishi Electric Corp Manufacture of field effect transistor
EP0723300A2 (en) * 1995-01-18 1996-07-24 Murata Manufacturing Co., Ltd. Semiconductor device with Schattky electrode
EP0723300A3 (en) * 1995-01-18 1996-11-20 Murata Manufacturing Co Semiconductor device with Schattky electrode
EP0744773A2 (en) * 1995-05-25 1996-11-27 Murata Manufacturing Co., Ltd. Semiconductor device having a plasma-processed layer and the method of manufacturing the same
EP0744773A3 (en) * 1995-05-25 1997-12-29 Murata Manufacturing Co., Ltd. Semiconductor device having a plasma-processed layer and the method of manufacturing the same
US6458675B1 (en) 1995-05-25 2002-10-01 Murata Manufacturing Co., Ltd. Semiconductor device having a plasma-processed layer and method of manufacturing the same

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