JPS55140262A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS55140262A
JPS55140262A JP4824879A JP4824879A JPS55140262A JP S55140262 A JPS55140262 A JP S55140262A JP 4824879 A JP4824879 A JP 4824879A JP 4824879 A JP4824879 A JP 4824879A JP S55140262 A JPS55140262 A JP S55140262A
Authority
JP
Japan
Prior art keywords
region
gate
layer
type
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4824879A
Other languages
Japanese (ja)
Inventor
Takeshi Matsuyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Gakki Co Ltd
Original Assignee
Nippon Gakki Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Gakki Co Ltd filed Critical Nippon Gakki Co Ltd
Priority to JP4824879A priority Critical patent/JPS55140262A/en
Publication of JPS55140262A publication Critical patent/JPS55140262A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
    • H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To simplify the fabricating steps of a semiconductor device and provide high integrity thereof by forming a reverse conducting type region at the gate region of a vertical junction type FET in the gate region when forming an insulating gate type FET and forming double diffusion type gate region disposed with gate electrodes partially on the gate region. CONSTITUTION:A silocon substrate 10 is formed with an n<+>-type layer 12 and an n<->-type layer 14 epitaxially grown thereon, and two p<+>-type region 16 consisting of a gate region of a vertical junction type FET or a SIT element Q2 and a substrate region of an insulating gate type FET element Q1 is diffused at both sides of the center 14A of the layer 14. Then, the n<+>-type source region 18 is formed at the elements Q1 and Q2 in the respective regions 16, the portion of the layer 14A interposed with the regions 16 is used as a vertical channel region of the element Q2, and the surface portion 16A between the layer 14A and the region 18 is used as the lateral channel region of the element Q1. Thereafter, an SiO2 gate insulating layer 20 is coated on the entire surface while reducing the thickness thereof on the surface portion 16A, and a gate electrode layer 24 is formed on the layer 14A.
JP4824879A 1979-04-19 1979-04-19 Semiconductor device Pending JPS55140262A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4824879A JPS55140262A (en) 1979-04-19 1979-04-19 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4824879A JPS55140262A (en) 1979-04-19 1979-04-19 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS55140262A true JPS55140262A (en) 1980-11-01

Family

ID=12798130

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4824879A Pending JPS55140262A (en) 1979-04-19 1979-04-19 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS55140262A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4543596A (en) * 1982-07-01 1985-09-24 Siemens Aktiengesellschaft Insulated-gate field-effect transistor (IGFET) with injector zone
US4584593A (en) * 1982-07-01 1986-04-22 Siemens Aktiengesellschaft Insulated-gate field-effect transistor (IGFET) with charge carrier injection
US4974059A (en) * 1982-12-21 1990-11-27 International Rectifier Corporation Semiconductor high-power mosfet device
EP0654827A1 (en) * 1993-05-26 1995-05-24 Texas Instruments Incorporated Integrated power cascode
KR100781213B1 (en) 2005-08-31 2007-12-03 샤프 가부시키가이샤 Lateral Double-diffused Field Effect Transistor and Integrated Circuit Having Same

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4543596A (en) * 1982-07-01 1985-09-24 Siemens Aktiengesellschaft Insulated-gate field-effect transistor (IGFET) with injector zone
US4584593A (en) * 1982-07-01 1986-04-22 Siemens Aktiengesellschaft Insulated-gate field-effect transistor (IGFET) with charge carrier injection
US4974059A (en) * 1982-12-21 1990-11-27 International Rectifier Corporation Semiconductor high-power mosfet device
EP0654827A1 (en) * 1993-05-26 1995-05-24 Texas Instruments Incorporated Integrated power cascode
KR100781213B1 (en) 2005-08-31 2007-12-03 샤프 가부시키가이샤 Lateral Double-diffused Field Effect Transistor and Integrated Circuit Having Same

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