JPS564279A - Insulated gate type field effect transistor - Google Patents

Insulated gate type field effect transistor

Info

Publication number
JPS564279A
JPS564279A JP8003479A JP8003479A JPS564279A JP S564279 A JPS564279 A JP S564279A JP 8003479 A JP8003479 A JP 8003479A JP 8003479 A JP8003479 A JP 8003479A JP S564279 A JPS564279 A JP S564279A
Authority
JP
Japan
Prior art keywords
region
regions
type
film
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8003479A
Other languages
Japanese (ja)
Inventor
Hiroshi Iwahashi
Masamichi Asano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP8003479A priority Critical patent/JPS564279A/en
Publication of JPS564279A publication Critical patent/JPS564279A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7838—Field effect transistors with field effect produced by an insulated gate without inversion channel, e.g. buried channel lateral MISFETs, normally-on lateral MISFETs, depletion-mode lateral MISFETs

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electronic Switches (AREA)

Abstract

PURPOSE:To provide an insulated gate type field effect transistor (IGFET) having sufficiently high charging capacity when used as a load element by forming a region having the same conducting type as the source and the drain regions and low impurity density while disposing the region between the source region and the drain region under a gate electrode. CONSTITUTION:A central portion as the element forming region of a P-type semiconductor substrate 21 is protruded, the thickness of the other portion is reduced, and N-type drain and source regions 22 and 23 are diffused in the central portion in space each other. Then, ion is implanted to the surface layer of the substrate 21 except the regions to form a P<+>-type channel cut region 28 is formed on the surface layer of the substrate 21, a thick field oxide film 27 is formed thereon, and a thin gate oxide film 25 is coated on the regions 22 and 23 surrounded by the film 27. Thereafter, a gate electrode 25 is bridged over the film 27 and is formed at the end on the film 26 as an FET. In this configuration an N<->-type region 24 having narrow width W is newly added between the regions 22 and 23 under the electrode 25 to prevent the decrease of the charging capacity.
JP8003479A 1979-06-25 1979-06-25 Insulated gate type field effect transistor Pending JPS564279A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8003479A JPS564279A (en) 1979-06-25 1979-06-25 Insulated gate type field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8003479A JPS564279A (en) 1979-06-25 1979-06-25 Insulated gate type field effect transistor

Publications (1)

Publication Number Publication Date
JPS564279A true JPS564279A (en) 1981-01-17

Family

ID=13706971

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8003479A Pending JPS564279A (en) 1979-06-25 1979-06-25 Insulated gate type field effect transistor

Country Status (1)

Country Link
JP (1) JPS564279A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4680605A (en) * 1984-03-12 1987-07-14 Xerox Corporation High voltage depletion mode transistor with serpentine current path
US5210437A (en) * 1990-04-20 1993-05-11 Kabushiki Kaisha Toshiba MOS device having a well layer for controlling threshold voltage
US7173076B2 (en) * 2003-09-03 2007-02-06 H.B. Fuller Licensing & Financing Inc Composition and method relating to a hot melt adhesive

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4680605A (en) * 1984-03-12 1987-07-14 Xerox Corporation High voltage depletion mode transistor with serpentine current path
US5210437A (en) * 1990-04-20 1993-05-11 Kabushiki Kaisha Toshiba MOS device having a well layer for controlling threshold voltage
US7173076B2 (en) * 2003-09-03 2007-02-06 H.B. Fuller Licensing & Financing Inc Composition and method relating to a hot melt adhesive

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