JPS55153378A - Field effect transistor - Google Patents

Field effect transistor

Info

Publication number
JPS55153378A
JPS55153378A JP6186379A JP6186379A JPS55153378A JP S55153378 A JPS55153378 A JP S55153378A JP 6186379 A JP6186379 A JP 6186379A JP 6186379 A JP6186379 A JP 6186379A JP S55153378 A JPS55153378 A JP S55153378A
Authority
JP
Japan
Prior art keywords
layer
conducting type
semiconductor layer
type semiconductor
back gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6186379A
Other languages
Japanese (ja)
Inventor
Shutaro Nanbu
Kota Kano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP6186379A priority Critical patent/JPS55153378A/en
Publication of JPS55153378A publication Critical patent/JPS55153378A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate

Abstract

PURPOSE:To reduce the back gate capacity by forming the first reverse conducting type semiconductor layer on a one conducting type semiconductor layer and the second reverse conducting type semiconductor layer having an area of lower specific resistance caused by the first semiconductor layer thereon both to serve as the channel. CONSTITUTION:On a p<+>-layer composing the FET, formed is a reverse conducting type n<-> layer 7 on which n layer 2 is formed. The n<->-layer 7 is made higher resistance than the n layer 2 with a lower concentration of impurities both to serve as the channel. A gate 5 of a p<+> layer 1 and the source and drain 3 and 4 of the n layer 2 are formed by ion implantation and diffusion and further, a p<+> layer 6 for separating elements is formed. The n<-> layer 7 is so arranged that the concentration of the impurities decreases gradually near the interface of the back gate. Thus, the capacity due to the back gate is reduced with a larger depletion layer to facilitate the action of the depletion layer thereby preventing the lowering of gm.
JP6186379A 1979-05-18 1979-05-18 Field effect transistor Pending JPS55153378A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6186379A JPS55153378A (en) 1979-05-18 1979-05-18 Field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6186379A JPS55153378A (en) 1979-05-18 1979-05-18 Field effect transistor

Publications (1)

Publication Number Publication Date
JPS55153378A true JPS55153378A (en) 1980-11-29

Family

ID=13183373

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6186379A Pending JPS55153378A (en) 1979-05-18 1979-05-18 Field effect transistor

Country Status (1)

Country Link
JP (1) JPS55153378A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57128980A (en) * 1980-12-19 1982-08-10 Philips Nv Schottky barrier field effect transistor
US4485392A (en) * 1981-12-28 1984-11-27 North American Philips Corporation Lateral junction field effect transistor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5117676A (en) * 1974-08-05 1976-02-12 Nippon Electric Co SETSUGOGATADENKAIKOKATORANJISUTA

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5117676A (en) * 1974-08-05 1976-02-12 Nippon Electric Co SETSUGOGATADENKAIKOKATORANJISUTA

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57128980A (en) * 1980-12-19 1982-08-10 Philips Nv Schottky barrier field effect transistor
JPH0137857B2 (en) * 1980-12-19 1989-08-09 Fuiritsupusu Furuuiranpenfuaburiken Nv
US4485392A (en) * 1981-12-28 1984-11-27 North American Philips Corporation Lateral junction field effect transistor device

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