JPS5691470A - Semiconductor - Google Patents

Semiconductor

Info

Publication number
JPS5691470A
JPS5691470A JP16852979A JP16852979A JPS5691470A JP S5691470 A JPS5691470 A JP S5691470A JP 16852979 A JP16852979 A JP 16852979A JP 16852979 A JP16852979 A JP 16852979A JP S5691470 A JPS5691470 A JP S5691470A
Authority
JP
Japan
Prior art keywords
film
type
regions
region
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16852979A
Other languages
Japanese (ja)
Other versions
JPH0232791B2 (en
Inventor
Yukimasa Uchida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP16852979A priority Critical patent/JPS5691470A/en
Publication of JPS5691470A publication Critical patent/JPS5691470A/en
Priority to JP2055080A priority patent/JPH02263475A/en
Publication of JPH0232791B2 publication Critical patent/JPH0232791B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To attain high steric integration by forming a gate electrode of a conductive film provided on a semiconductive substrate formed using an oridinary type of process with an insulating film placed therebetween and a semiconductor device on the conductive film so that the device may intersect with the electrode. CONSTITUTION:An ordinary n channel MOS type FET is formed by providing an n<+> type source region and a drain region 4 in the region surrounded with an field oxide film 2 of a substrate 1 and a gate electrode made of a silicon oxide film on the portion between the both regions 3 and 4 on the surface of the substrate 1. A silicon oxide film 7 is provided on the regions 3 and 4 and a P-N junction is formed by providing a P type polycrystalline silicon film 8 thereon so that the film 8 may contact and intersect with a polycrystalline silicon film 6. A P type junction FET is formed with the upper portion of the junction surface used as channel region and the both sides thereof used as source and drain regions.
JP16852979A 1979-12-25 1979-12-25 Semiconductor Granted JPS5691470A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP16852979A JPS5691470A (en) 1979-12-25 1979-12-25 Semiconductor
JP2055080A JPH02263475A (en) 1979-12-25 1990-03-08 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16852979A JPS5691470A (en) 1979-12-25 1979-12-25 Semiconductor

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2055080A Division JPH02263475A (en) 1979-12-25 1990-03-08 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5691470A true JPS5691470A (en) 1981-07-24
JPH0232791B2 JPH0232791B2 (en) 1990-07-23

Family

ID=15869704

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16852979A Granted JPS5691470A (en) 1979-12-25 1979-12-25 Semiconductor

Country Status (1)

Country Link
JP (1) JPS5691470A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5760868A (en) * 1980-09-29 1982-04-13 Seiko Epson Corp Cmos memory cell
JPS6135565A (en) * 1984-07-27 1986-02-20 Hitachi Ltd Thin film transistor
JPS62131573A (en) * 1985-12-04 1987-06-13 Hitachi Ltd Semiconductor device
JPH0199261A (en) * 1987-10-12 1989-04-18 Nec Corp Semiconductor device and manufacture thereof
JPH0230186A (en) * 1988-07-19 1990-01-31 Agency Of Ind Science & Technol Thin-film field-effect transistor and manufacture thereof
JPH02263475A (en) * 1979-12-25 1990-10-26 Toshiba Corp Semiconductor device
JPH08213482A (en) * 1995-11-24 1996-08-20 Seiko Epson Corp Production of thin-film transistor

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53105389A (en) * 1977-02-25 1978-09-13 Oki Electric Ind Co Ltd Manufacture for insulating gate type semiconductor integrated circuit
JPS5457969A (en) * 1977-10-18 1979-05-10 Sony Corp Electric field effect transistor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53105389A (en) * 1977-02-25 1978-09-13 Oki Electric Ind Co Ltd Manufacture for insulating gate type semiconductor integrated circuit
JPS5457969A (en) * 1977-10-18 1979-05-10 Sony Corp Electric field effect transistor

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02263475A (en) * 1979-12-25 1990-10-26 Toshiba Corp Semiconductor device
JPS5760868A (en) * 1980-09-29 1982-04-13 Seiko Epson Corp Cmos memory cell
JPH0435903B2 (en) * 1980-09-29 1992-06-12 Seiko Epson Corp
JPS6135565A (en) * 1984-07-27 1986-02-20 Hitachi Ltd Thin film transistor
JPS62131573A (en) * 1985-12-04 1987-06-13 Hitachi Ltd Semiconductor device
JPH0199261A (en) * 1987-10-12 1989-04-18 Nec Corp Semiconductor device and manufacture thereof
JPH0230186A (en) * 1988-07-19 1990-01-31 Agency Of Ind Science & Technol Thin-film field-effect transistor and manufacture thereof
JPH08213482A (en) * 1995-11-24 1996-08-20 Seiko Epson Corp Production of thin-film transistor

Also Published As

Publication number Publication date
JPH0232791B2 (en) 1990-07-23

Similar Documents

Publication Publication Date Title
JPS55133574A (en) Insulated gate field effect transistor
JPS5691470A (en) Semiconductor
JPS55151363A (en) Mos semiconductor device and fabricating method of the same
JPS6439069A (en) Field-effect transistor
JPS57201070A (en) Semiconductor device
JPS5559759A (en) Semiconductor device
JPS57155777A (en) Mos transistor
JPS54136275A (en) Field effect transistor of isolation gate
JPS57162360A (en) Complementary insulated gate field effect semiconductor device
JPS57192069A (en) Insulated gate field effect semiconductor device
JPS55107229A (en) Method of manufacturing semiconductor device
JPS5552275A (en) Junction field effect transistor
JPS54107270A (en) Semiconductor device and its production
JPS5346287A (en) Production of semiconductor integrated circuit
JPS5513944A (en) C-mos semiconductor device
JPS6417475A (en) Manufacture of mos semiconductor device
JPS5561072A (en) Manufacture of diffusion matching type mis ic device
JPS57211278A (en) Semiconductor device
JPS6465875A (en) Thin film transistor and manufacture thereof
JPS6428860A (en) Semiconductor device and manufacture thereof
JPS5721865A (en) Manufacture of semiconductor device
JPS55120169A (en) Semiconductor device
JPS566464A (en) Semiconductor device and manufacture thereof
JPS57201063A (en) Manufacture of semiconductor device
JPS6431469A (en) Field effect transistor