JPS5691470A - Semiconductor - Google Patents

Semiconductor

Info

Publication number
JPS5691470A
JPS5691470A JP16852979A JP16852979A JPS5691470A JP S5691470 A JPS5691470 A JP S5691470A JP 16852979 A JP16852979 A JP 16852979A JP 16852979 A JP16852979 A JP 16852979A JP S5691470 A JPS5691470 A JP S5691470A
Authority
JP
Japan
Prior art keywords
film
type
formed
regions
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16852979A
Other versions
JPH0232791B2 (en
Inventor
Yukimasa Uchida
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP54168529A priority Critical patent/JPH0232791B2/ja
Publication of JPS5691470A publication Critical patent/JPS5691470A/en
Priority claimed from JP2055080A external-priority patent/JPH02263475A/en
Publication of JPH0232791B2 publication Critical patent/JPH0232791B2/ja
Anticipated expiration legal-status Critical
Application status is Expired - Lifetime legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only

Abstract

PURPOSE:To attain high steric integration by forming a gate electrode of a conductive film provided on a semiconductive substrate formed using an oridinary type of process with an insulating film placed therebetween and a semiconductor device on the conductive film so that the device may intersect with the electrode. CONSTITUTION:An ordinary n channel MOS type FET is formed by providing an n<+> type source region and a drain region 4 in the region surrounded with an field oxide film 2 of a substrate 1 and a gate electrode made of a silicon oxide film on the portion between the both regions 3 and 4 on the surface of the substrate 1. A silicon oxide film 7 is provided on the regions 3 and 4 and a P-N junction is formed by providing a P type polycrystalline silicon film 8 thereon so that the film 8 may contact and intersect with a polycrystalline silicon film 6. A P type junction FET is formed with the upper portion of the junction surface used as channel region and the both sides thereof used as source and drain regions.
JP54168529A 1979-12-25 1979-12-25 Expired - Lifetime JPH0232791B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP54168529A JPH0232791B2 (en) 1979-12-25 1979-12-25

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP54168529A JPH0232791B2 (en) 1979-12-25 1979-12-25
JP2055080A JPH02263475A (en) 1979-12-25 1990-03-08 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5691470A true JPS5691470A (en) 1981-07-24
JPH0232791B2 JPH0232791B2 (en) 1990-07-23

Family

ID=15869704

Family Applications (1)

Application Number Title Priority Date Filing Date
JP54168529A Expired - Lifetime JPH0232791B2 (en) 1979-12-25 1979-12-25

Country Status (1)

Country Link
JP (1) JPH0232791B2 (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5760868A (en) * 1980-09-29 1982-04-13 Seiko Epson Corp Cmos memory cell
JPS6135565A (en) * 1984-07-27 1986-02-20 Hitachi Ltd Thin film transistor
JPS62131573A (en) * 1985-12-04 1987-06-13 Hitachi Ltd Semiconductor device
JPH0199261A (en) * 1987-10-12 1989-04-18 Nec Corp Semiconductor device and manufacture thereof
JPH0230186A (en) * 1988-07-19 1990-01-31 Agency Of Ind Science & Technol Thin-film field-effect transistor and manufacture thereof
JPH02263475A (en) * 1979-12-25 1990-10-26 Toshiba Corp Semiconductor device
JPH08213482A (en) * 1995-11-24 1996-08-20 Seiko Epson Corp Production of thin-film transistor

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53105389A (en) * 1977-02-25 1978-09-13 Oki Electric Ind Co Ltd Manufacture for insulating gate type semiconductor integrated circuit
JPS5457969A (en) * 1977-10-18 1979-05-10 Sony Corp Electric field effect transistor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53105389A (en) * 1977-02-25 1978-09-13 Oki Electric Ind Co Ltd Manufacture for insulating gate type semiconductor integrated circuit
JPS5457969A (en) * 1977-10-18 1979-05-10 Sony Corp Electric field effect transistor

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02263475A (en) * 1979-12-25 1990-10-26 Toshiba Corp Semiconductor device
JPS5760868A (en) * 1980-09-29 1982-04-13 Seiko Epson Corp Cmos memory cell
JPH0435903B2 (en) * 1980-09-29 1992-06-12 Seiko Epson Corp
JPS6135565A (en) * 1984-07-27 1986-02-20 Hitachi Ltd Thin film transistor
JPS62131573A (en) * 1985-12-04 1987-06-13 Hitachi Ltd Semiconductor device
JPH0199261A (en) * 1987-10-12 1989-04-18 Nec Corp Semiconductor device and manufacture thereof
JPH0230186A (en) * 1988-07-19 1990-01-31 Agency Of Ind Science & Technol Thin-film field-effect transistor and manufacture thereof
JPH08213482A (en) * 1995-11-24 1996-08-20 Seiko Epson Corp Production of thin-film transistor

Also Published As

Publication number Publication date
JPH0232791B2 (en) 1990-07-23

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