JPS6428860A - Semiconductor device and manufacture thereof - Google Patents

Semiconductor device and manufacture thereof

Info

Publication number
JPS6428860A
JPS6428860A JP62184794A JP18479487A JPS6428860A JP S6428860 A JPS6428860 A JP S6428860A JP 62184794 A JP62184794 A JP 62184794A JP 18479487 A JP18479487 A JP 18479487A JP S6428860 A JPS6428860 A JP S6428860A
Authority
JP
Japan
Prior art keywords
region
type
electrode
ion
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62184794A
Other languages
Japanese (ja)
Other versions
JPH0628316B2 (en
Inventor
Shuichi Oya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62184794A priority Critical patent/JPH0628316B2/en
Publication of JPS6428860A publication Critical patent/JPS6428860A/en
Publication of JPH0628316B2 publication Critical patent/JPH0628316B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To prevent the decrease of the breakdown voltage of a junction between a drain and a substrate, by ion-implanting P-type impurity via a contact hole formed on an N-type source region of an N-channel MOS transistor. CONSTITUTION:A gate insulating film 2 and a gate electrode 3 are formed on a silicon substrate 1. By applying the electrode 3 to a mask, arsenide being N-type impurity is ion-implanted to form an N-type source region 4 and a drain region 5. After an SiO2 film is grown as an interlayer insulating film 6, a contact hole 7 for grounding electrode is made only on the N-type source region 4 by patterning. Boron, P-type impurity, is ion-implanted via the contact hole 7, and a P<+> type region 8 is formed so as to be in contact with the bottom surface of the region 4. A source electrode 9 composed of tungsten silicide for source grounding is formed. Thereby, the decrease of the breakdown voltage of a junction between a drain and a substrate, and the increase of junction capacitance can be prevented.
JP62184794A 1987-07-23 1987-07-23 Semiconductor device and manufacturing method thereof Expired - Lifetime JPH0628316B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62184794A JPH0628316B2 (en) 1987-07-23 1987-07-23 Semiconductor device and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62184794A JPH0628316B2 (en) 1987-07-23 1987-07-23 Semiconductor device and manufacturing method thereof

Publications (2)

Publication Number Publication Date
JPS6428860A true JPS6428860A (en) 1989-01-31
JPH0628316B2 JPH0628316B2 (en) 1994-04-13

Family

ID=16159406

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62184794A Expired - Lifetime JPH0628316B2 (en) 1987-07-23 1987-07-23 Semiconductor device and manufacturing method thereof

Country Status (1)

Country Link
JP (1) JPH0628316B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06104429A (en) * 1992-09-18 1994-04-15 Rohm Co Ltd Mos transistor
JP2002305299A (en) * 2001-04-05 2002-10-18 Mitsubishi Electric Corp Semiconductor device and method of manufacturing the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06104429A (en) * 1992-09-18 1994-04-15 Rohm Co Ltd Mos transistor
JP2002305299A (en) * 2001-04-05 2002-10-18 Mitsubishi Electric Corp Semiconductor device and method of manufacturing the same

Also Published As

Publication number Publication date
JPH0628316B2 (en) 1994-04-13

Similar Documents

Publication Publication Date Title
KR840008537A (en) Semiconductor device
EP0402784A3 (en) Method of manufacturing a CMOS semiconductor device
US4713329A (en) Well mask for CMOS process
EP0187260A2 (en) Process for fabricating a semiconductor integrated circuit device having MISFETs
JPS5618456A (en) Substrate potential generator
JPS55151363A (en) Mos semiconductor device and fabricating method of the same
JPS6428860A (en) Semiconductor device and manufacture thereof
JPS5691470A (en) Semiconductor
GB1503249A (en) Semiconductor devices
JPS5685851A (en) Complementary mos type semiconductor device
JPS6427272A (en) Semiconductor device
JPS6431471A (en) Semiconductor device
GB1433667A (en) Bipolar transistors
JPS5612773A (en) Silicon gate mos field-effect transistor
EP0097338A3 (en) Reference voltage generating device
JPS6420649A (en) Semiconductor device
JPS5516411A (en) Mis semiconductor device and process for production of same
JPS57173965A (en) Semiconductor device
JPS5574182A (en) Preparing junction type field effect transistor
KR960016485B1 (en) Transistor structure
JPS6477955A (en) Manufacture of semiconductor device
JPS6467968A (en) Semiconductor device
JPS5721855A (en) Manufacture of complementary mos semiconductor device
JPH0422346B2 (en)
JPS57143855A (en) Semiconductor integrated circuit device