JPS57173965A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS57173965A
JPS57173965A JP5909281A JP5909281A JPS57173965A JP S57173965 A JPS57173965 A JP S57173965A JP 5909281 A JP5909281 A JP 5909281A JP 5909281 A JP5909281 A JP 5909281A JP S57173965 A JPS57173965 A JP S57173965A
Authority
JP
Japan
Prior art keywords
layer
substrate
type
well
formation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5909281A
Other languages
Japanese (ja)
Inventor
Koji Akaha
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP5909281A priority Critical patent/JPS57173965A/en
Publication of JPS57173965A publication Critical patent/JPS57173965A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors

Abstract

PURPOSE:To prevent the formation of a parasitic transistor in a device wherein bipolar and CMOS transistors are formed in an epitaxial region formed on a substrate by a method wherein MOS well regions formed in the epitaxial region communicate with the substrate. CONSTITUTION:An N type epitaxial layer 12 is formed on a P type Si substrate 11 and the layer 12 is provided with a P<+> diffused layer 16 separating as dielectric insulator the layer 12 into a plurality of insular regions. To build an N channel MOS transistor in the insular regions of the N type epitaxial layer 12, a P type impurity is implanted in the layer 12 for the formation of a P<-> well 13 doped as deep as to reach the substrate 11, and the P<-> well 13 is provided with diffused source and drain layers 14. Lack of an N type layer between the P<-> well 13 and the P type Si substrate 11 prevents the formation of a parasitic transistor and, consequently, latch up.
JP5909281A 1981-04-21 1981-04-21 Semiconductor device Pending JPS57173965A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5909281A JPS57173965A (en) 1981-04-21 1981-04-21 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5909281A JPS57173965A (en) 1981-04-21 1981-04-21 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS57173965A true JPS57173965A (en) 1982-10-26

Family

ID=13103343

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5909281A Pending JPS57173965A (en) 1981-04-21 1981-04-21 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57173965A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5864060A (en) * 1981-10-13 1983-04-16 Toshiba Corp Manufacture of semiconductor device
US4980746A (en) * 1988-04-29 1990-12-25 Dallas Semiconductor Corporation Integrated circuit with improved battery protection

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5864060A (en) * 1981-10-13 1983-04-16 Toshiba Corp Manufacture of semiconductor device
US4980746A (en) * 1988-04-29 1990-12-25 Dallas Semiconductor Corporation Integrated circuit with improved battery protection

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