JPS55141751A - Complementary mis semiconductor device and fabricating method of the same - Google Patents

Complementary mis semiconductor device and fabricating method of the same

Info

Publication number
JPS55141751A
JPS55141751A JP4903279A JP4903279A JPS55141751A JP S55141751 A JPS55141751 A JP S55141751A JP 4903279 A JP4903279 A JP 4903279A JP 4903279 A JP4903279 A JP 4903279A JP S55141751 A JPS55141751 A JP S55141751A
Authority
JP
Japan
Prior art keywords
type
semiconductor device
drain
mosfet
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4903279A
Other languages
Japanese (ja)
Inventor
Akira Yamamoto
Kaoru Saito
Kiyobumi Uchibori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP4903279A priority Critical patent/JPS55141751A/en
Publication of JPS55141751A publication Critical patent/JPS55141751A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0921—Means for preventing a bipolar, e.g. thyristor, action between the different transistor regions, e.g. Latchup prevention

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To improve the latch-up strength of a complementary MIS semiconductor device and the reliability thereof by forming the diffusion depth of a guard band formed at the periphery of a well deeper than the source and drain of the MOS semiconductor device. CONSTITUTION:A p-type channel MOSFET Q1 is formed of a source S1, a drain D1 and a gate G1 by P diffusion partially on the surface of an n<->-type substrate 1. Then, an n-type channel MOSFET Q2 is formed of a source S2, a drain D2 and a gate G2 by N diffusion on the surface of the p<->-type well 2 on the substrate 1. Thereafter, an n<+>-type guard band 4 is formed on the surface of the n<->-type substrate 1 to surround the p-type well 2. At this time the diffusion depth d2 of the band 4 is so formed as to be deeper than the difffusion depth d1 of the source and drain of the MOSFET. Thus, the hFE of a bipolar transistor formed between the MOSFET Q1 and the MOSFET Q2 can be lowered to improve the latchup strength thereof.
JP4903279A 1979-04-23 1979-04-23 Complementary mis semiconductor device and fabricating method of the same Pending JPS55141751A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4903279A JPS55141751A (en) 1979-04-23 1979-04-23 Complementary mis semiconductor device and fabricating method of the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4903279A JPS55141751A (en) 1979-04-23 1979-04-23 Complementary mis semiconductor device and fabricating method of the same

Publications (1)

Publication Number Publication Date
JPS55141751A true JPS55141751A (en) 1980-11-05

Family

ID=12819741

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4903279A Pending JPS55141751A (en) 1979-04-23 1979-04-23 Complementary mis semiconductor device and fabricating method of the same

Country Status (1)

Country Link
JP (1) JPS55141751A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1984001241A1 (en) * 1982-09-20 1984-03-29 Semi Processes Inc Cmos integrated circuit with guard bands for latch-up protection
JPS6450555A (en) * 1987-08-21 1989-02-27 Nec Corp Complementary mos transistor
EP0680091A1 (en) * 1994-04-13 1995-11-02 Winbond Electronics Corporation Reduced latch-up CMOS device and method of fabrication

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5238890A (en) * 1975-09-23 1977-03-25 Mitsubishi Electric Corp Semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5238890A (en) * 1975-09-23 1977-03-25 Mitsubishi Electric Corp Semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1984001241A1 (en) * 1982-09-20 1984-03-29 Semi Processes Inc Cmos integrated circuit with guard bands for latch-up protection
JPS6450555A (en) * 1987-08-21 1989-02-27 Nec Corp Complementary mos transistor
EP0680091A1 (en) * 1994-04-13 1995-11-02 Winbond Electronics Corporation Reduced latch-up CMOS device and method of fabrication

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