JPS57118663A - Manufacture of semiconductor integrated circuit device - Google Patents

Manufacture of semiconductor integrated circuit device

Info

Publication number
JPS57118663A
JPS57118663A JP13338680A JP13338680A JPS57118663A JP S57118663 A JPS57118663 A JP S57118663A JP 13338680 A JP13338680 A JP 13338680A JP 13338680 A JP13338680 A JP 13338680A JP S57118663 A JPS57118663 A JP S57118663A
Authority
JP
Japan
Prior art keywords
type
collector
drain
region
channel mos
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13338680A
Other languages
Japanese (ja)
Other versions
JPS6046544B2 (en
Inventor
Kimimaro Yoshikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP13338680A priority Critical patent/JPS6046544B2/en
Publication of JPS57118663A publication Critical patent/JPS57118663A/en
Publication of JPS6046544B2 publication Critical patent/JPS6046544B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To simultaneously satisfy the digital circuit of high integration density and low power consumption, and a high frequency and high current driven analogue circuit by a methd wherein a complementary MOSFET and a complementary bipolar transistor are formed on the same substrate. CONSTITUTION:An N<+> buried layer 22 is provided on a P-substrate 21, and P<+> buried layers 23 and 23' are provided on a bipolar PNP and a detached region. An N type epitaxial layer 30 is formed on the above layers, and a P-well 24', a P type collector region 24, and a P type detached region 24' are formed at the same time. Then, after an N type base 26 has been formed, an NPN base 25, a PNP emitter 25', a collector 25'', and a source and drain 25''' of P-channel MOS are formed simultaneously. Then, an emitter 27 for an NPN transistor, a collector contact 27', and a source and drain 27'' for an N-channel MOS are formed at the same time. Subsequently, a metal electrode 29 and gate electrodes 29' and 29'' are formed.
JP13338680A 1980-09-25 1980-09-25 Method for manufacturing semiconductor integrated circuit device Expired JPS6046544B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13338680A JPS6046544B2 (en) 1980-09-25 1980-09-25 Method for manufacturing semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13338680A JPS6046544B2 (en) 1980-09-25 1980-09-25 Method for manufacturing semiconductor integrated circuit device

Publications (2)

Publication Number Publication Date
JPS57118663A true JPS57118663A (en) 1982-07-23
JPS6046544B2 JPS6046544B2 (en) 1985-10-16

Family

ID=15103518

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13338680A Expired JPS6046544B2 (en) 1980-09-25 1980-09-25 Method for manufacturing semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS6046544B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6066852A (en) * 1983-09-22 1985-04-17 Toshiba Corp Semiconductor ic device and manufacture thereof
JPS6072255A (en) * 1983-09-28 1985-04-24 Toshiba Corp Semiconductor ic device and manufacture thereof
JPS61276359A (en) * 1985-05-31 1986-12-06 Nec Corp Semiconductor device and manufacture thereof
JPH02125462A (en) * 1988-11-04 1990-05-14 Fuji Electric Co Ltd Semiconductor integrated circuit device and manufacture thereof

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6066852A (en) * 1983-09-22 1985-04-17 Toshiba Corp Semiconductor ic device and manufacture thereof
JPH0554266B2 (en) * 1983-09-22 1993-08-12 Tokyo Shibaura Electric Co
JPS6072255A (en) * 1983-09-28 1985-04-24 Toshiba Corp Semiconductor ic device and manufacture thereof
JPH0148661B2 (en) * 1983-09-28 1989-10-20 Tokyo Shibaura Electric Co
JPS61276359A (en) * 1985-05-31 1986-12-06 Nec Corp Semiconductor device and manufacture thereof
JPH02125462A (en) * 1988-11-04 1990-05-14 Fuji Electric Co Ltd Semiconductor integrated circuit device and manufacture thereof

Also Published As

Publication number Publication date
JPS6046544B2 (en) 1985-10-16

Similar Documents

Publication Publication Date Title
JPS5546504A (en) Semiconductor device
GB2173638B (en) Semiconductor devices
JPS6480063A (en) Npn bipolar transistor
JPS5618456A (en) Substrate potential generator
ES8301391A1 (en) High-voltage semiconductor switch.
JPS57118663A (en) Manufacture of semiconductor integrated circuit device
JPS56100461A (en) Semiconductor ic device
JPS6484659A (en) Manufacture of semiconductor device
JPS56108255A (en) Semiconductor integrated circuit
JPS55141751A (en) Complementary mis semiconductor device and fabricating method of the same
JPS57166067A (en) Bias generating unit for substrate
JPS6441258A (en) Semiconductor integrated circuit
JPS5297683A (en) Semiconductor circuit device
JPS54113269A (en) Production of junction-type electronic field effect transistor
JPS5310282A (en) Production of mos type semiconductor integrated circuit
JPS57136358A (en) Integrated circuit device and manufacture thereof
JPS56100460A (en) Bipolar mos semiconductor device and manufacture thereof
JPS5710964A (en) Manufacture of semiconductor device
JPS5265689A (en) Semiconductor integrated circuit and its production
JPS57211263A (en) Manufacture of complementary mos semiconductor device
JPS5310281A (en) Production of mos type semiconductor integrated circuit
JPS57197863A (en) Semiconductor integrated circuit device
JPS5762565A (en) Semiconductor device
JPS57143855A (en) Semiconductor integrated circuit device
JPS57197835A (en) Semiconductor device