JPS6441258A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPS6441258A
JPS6441258A JP62197610A JP19761087A JPS6441258A JP S6441258 A JPS6441258 A JP S6441258A JP 62197610 A JP62197610 A JP 62197610A JP 19761087 A JP19761087 A JP 19761087A JP S6441258 A JPS6441258 A JP S6441258A
Authority
JP
Japan
Prior art keywords
drain region
source region
region
oxide film
field oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62197610A
Other languages
Japanese (ja)
Inventor
Eigo Fuse
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62197610A priority Critical patent/JPS6441258A/en
Publication of JPS6441258A publication Critical patent/JPS6441258A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To restrain leak current, and improve subthreshold characteristics, by making a part sandwitched by a source region and a drain region of a semiconductor substrate surface just under a gate electrode, and the source.drain region not brought into contact with a field oxide film side-wall. CONSTITUTION:In a P-well 4 defined by a field oxide film 3, an N-channel MOS transistor having a source region 5'a and a drain region 5'b is included. The surface part of a P-type Si substrate just under the source region 5'a, the drain region 5'b and a gate electrode 7, i.e., a part on a P-type well sandwitched by the drain 5'b and the source region 5'a is separated 0.5mum away from the field oxide film. Thereby, the leak current between the source region 5'a and the drain region 5'b is avoided, and subthreshold characteristics are improved.
JP62197610A 1987-08-07 1987-08-07 Semiconductor integrated circuit Pending JPS6441258A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62197610A JPS6441258A (en) 1987-08-07 1987-08-07 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62197610A JPS6441258A (en) 1987-08-07 1987-08-07 Semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
JPS6441258A true JPS6441258A (en) 1989-02-13

Family

ID=16377334

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62197610A Pending JPS6441258A (en) 1987-08-07 1987-08-07 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS6441258A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003000094A (en) * 2001-06-21 2003-01-07 Sakai Ovex Co Ltd Apparatus for selecting cultured feed organism

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6235557A (en) * 1985-08-09 1987-02-16 Agency Of Ind Science & Technol Semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6235557A (en) * 1985-08-09 1987-02-16 Agency Of Ind Science & Technol Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003000094A (en) * 2001-06-21 2003-01-07 Sakai Ovex Co Ltd Apparatus for selecting cultured feed organism

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