JPS6464364A - Semiconductor device and its manufacture - Google Patents
Semiconductor device and its manufactureInfo
- Publication number
- JPS6464364A JPS6464364A JP62220226A JP22022687A JPS6464364A JP S6464364 A JPS6464364 A JP S6464364A JP 62220226 A JP62220226 A JP 62220226A JP 22022687 A JP22022687 A JP 22022687A JP S6464364 A JPS6464364 A JP S6464364A
- Authority
- JP
- Japan
- Prior art keywords
- depletion
- drain
- channel
- mode
- layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To execute an operation with good reliability by using a conventional power-supply voltage by a method wherein a depletion-mode region is formed in a self-aligned manner at ends of a source and a drain of a channel in an MIS-type transistor of an LDD structure. CONSTITUTION:In an LDD structure having a low-concentration layer 5 in a source and a drain, a threshold voltage near the source and the drain of a channel is set to a depletion mode. Because depletion-mode layers 4 exist at both ends of the channel, a symmetrical operation like a transfer gate is possible. In the case of a driver MOS such as an inverter or the like, only a drain side is sufficient. In addition, when punchthrough stopper layers 16 are added and the depletion-mode layers 4 are formed, boron is implanted into a substrate at higher energy. In addition, the punchthrough stopper layers 16 are formed on a whole face inside the substrate 1; by this setup, high reliability is realized; a short-channel effect such as a punchthrough or the like can be reduced.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62220226A JP2550092B2 (en) | 1987-09-04 | 1987-09-04 | Semiconductor device and manufacturing method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62220226A JP2550092B2 (en) | 1987-09-04 | 1987-09-04 | Semiconductor device and manufacturing method thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6464364A true JPS6464364A (en) | 1989-03-10 |
JP2550092B2 JP2550092B2 (en) | 1996-10-30 |
Family
ID=16747859
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62220226A Expired - Fee Related JP2550092B2 (en) | 1987-09-04 | 1987-09-04 | Semiconductor device and manufacturing method thereof |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2550092B2 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5216272A (en) * | 1990-04-13 | 1993-06-01 | Nippondenso Co., Ltd. | High withstanding voltage MIS transistor |
US5594264A (en) * | 1994-12-16 | 1997-01-14 | Mitsubishi Denki Kabushiki Kaisha | LDD semiconductor device with peak impurity concentrations |
US5606191A (en) * | 1994-12-16 | 1997-02-25 | Mosel Vitelic, Inc. | Semiconductor device with lightly doped drain regions |
-
1987
- 1987-09-04 JP JP62220226A patent/JP2550092B2/en not_active Expired - Fee Related
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5216272A (en) * | 1990-04-13 | 1993-06-01 | Nippondenso Co., Ltd. | High withstanding voltage MIS transistor |
US5342802A (en) * | 1990-04-13 | 1994-08-30 | Nippondenso Co., Ltd. | Method of manufacturing a complementary MIS transistor |
US5594264A (en) * | 1994-12-16 | 1997-01-14 | Mitsubishi Denki Kabushiki Kaisha | LDD semiconductor device with peak impurity concentrations |
US5606191A (en) * | 1994-12-16 | 1997-02-25 | Mosel Vitelic, Inc. | Semiconductor device with lightly doped drain regions |
Also Published As
Publication number | Publication date |
---|---|
JP2550092B2 (en) | 1996-10-30 |
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Legal Events
Date | Code | Title | Description |
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S111 | Request for change of ownership or part of ownership |
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R370 | Written measure of declining of transfer procedure |
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S111 | Request for change of ownership or part of ownership |
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R350 | Written notification of registration of transfer |
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LAPS | Cancellation because of no payment of annual fees |