JPS5745969A - Mis type semiconductor integrated circuit device - Google Patents

Mis type semiconductor integrated circuit device

Info

Publication number
JPS5745969A
JPS5745969A JP55121611A JP12161180A JPS5745969A JP S5745969 A JPS5745969 A JP S5745969A JP 55121611 A JP55121611 A JP 55121611A JP 12161180 A JP12161180 A JP 12161180A JP S5745969 A JPS5745969 A JP S5745969A
Authority
JP
Japan
Prior art keywords
integrated circuit
semiconductor integrated
type semiconductor
circuit device
channel length
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55121611A
Other languages
Japanese (ja)
Inventor
Seiichi Iwamatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP55121611A priority Critical patent/JPS5745969A/en
Publication of JPS5745969A publication Critical patent/JPS5745969A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0927—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising a P-well only in the substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To improve the integration of an MIS type semiconductor integrated circuit device by controlling the diffusing depth of source and drain layers. CONSTITUTION:The diffusing depth of N type source and drain layers 3, 4 is Xj1= 0.5mum, and the diffusing depth of P type source and drain layers 5, 6 Xj2=1mum. When the channel length L0=3mum of a gate region is formed equally, the effective channel length L1 become 2mum, 1mum, and MOSFET of different channel length with equal gate size can be formed on the same substrate, and a complementary MOS device can be formed with the minimum sized pattern, thereby improving the integration of the device.
JP55121611A 1980-09-02 1980-09-02 Mis type semiconductor integrated circuit device Pending JPS5745969A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55121611A JPS5745969A (en) 1980-09-02 1980-09-02 Mis type semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55121611A JPS5745969A (en) 1980-09-02 1980-09-02 Mis type semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
JPS5745969A true JPS5745969A (en) 1982-03-16

Family

ID=14815532

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55121611A Pending JPS5745969A (en) 1980-09-02 1980-09-02 Mis type semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS5745969A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6066459A (en) * 1983-09-21 1985-04-16 Seiko Epson Corp Semiconductor device
US5945715A (en) * 1995-05-29 1999-08-31 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory device having a memory cell region and a peripheral circuit region and method of manufacturing the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6066459A (en) * 1983-09-21 1985-04-16 Seiko Epson Corp Semiconductor device
JPH065710B2 (en) * 1983-09-21 1994-01-19 セイコーエプソン株式会社 Semiconductor device
US5945715A (en) * 1995-05-29 1999-08-31 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory device having a memory cell region and a peripheral circuit region and method of manufacturing the same

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