JPS55118664A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS55118664A
JPS55118664A JP2586279A JP2586279A JPS55118664A JP S55118664 A JPS55118664 A JP S55118664A JP 2586279 A JP2586279 A JP 2586279A JP 2586279 A JP2586279 A JP 2586279A JP S55118664 A JPS55118664 A JP S55118664A
Authority
JP
Japan
Prior art keywords
diffused layer
protective element
diffused
deeper
input
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2586279A
Other languages
Japanese (ja)
Inventor
Takashi Yamanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP2586279A priority Critical patent/JPS55118664A/en
Publication of JPS55118664A publication Critical patent/JPS55118664A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To improve the reliability of an IC by increasing the depth of the junction of an input protective element larger than that of a diffused layer, thereby preventing the breakdown withstand voltage thereof from lowering. CONSTITUTION:A diffused layer 14 of an input protective element has a deeper junction depth than the diffused layers of source and drain 16, 16' of an internal element. The channel stopper 17 making contact with the diffused layer 14 of the input protective element is deeper than the channel stopper 19 making contact with the diffused layers 16, 16'. Thus, the internal element prevents a short channel effect to enhance its performance. Accordingly, shallower diffused layer may be formed. Since the input protective element employs deeper diffused layer, it can improve the reliability of the IC against the input breakdown.
JP2586279A 1979-03-06 1979-03-06 Semiconductor device Pending JPS55118664A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2586279A JPS55118664A (en) 1979-03-06 1979-03-06 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2586279A JPS55118664A (en) 1979-03-06 1979-03-06 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS55118664A true JPS55118664A (en) 1980-09-11

Family

ID=12177608

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2586279A Pending JPS55118664A (en) 1979-03-06 1979-03-06 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS55118664A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0102647A2 (en) * 1982-09-07 1984-03-14 Kabushiki Kaisha Toshiba Input protection device for C-MOS device
JPH027474A (en) * 1988-06-24 1990-01-11 Sony Corp Semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51117880A (en) * 1975-04-03 1976-10-16 Rca Corp Semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51117880A (en) * 1975-04-03 1976-10-16 Rca Corp Semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0102647A2 (en) * 1982-09-07 1984-03-14 Kabushiki Kaisha Toshiba Input protection device for C-MOS device
JPH027474A (en) * 1988-06-24 1990-01-11 Sony Corp Semiconductor device

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