JPS6461956A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS6461956A
JPS6461956A JP13663388A JP13663388A JPS6461956A JP S6461956 A JPS6461956 A JP S6461956A JP 13663388 A JP13663388 A JP 13663388A JP 13663388 A JP13663388 A JP 13663388A JP S6461956 A JPS6461956 A JP S6461956A
Authority
JP
Japan
Prior art keywords
region
extended
doped
drain
depth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13663388A
Other languages
Japanese (ja)
Inventor
Ei Haanden Jieemuzu
Ai Kogan Eidorian
Ei Buranchiyaado Richiyaado
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Vishay Siliconix Inc
Original Assignee
Siliconix Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siliconix Inc filed Critical Siliconix Inc
Publication of JPS6461956A publication Critical patent/JPS6461956A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
    • H01L29/7808—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device the other device being a breakdown diode, e.g. Zener diode

Abstract

PURPOSE: To reform the tolerance range for the application of overovltage and enhance the durability by using a circuit which has a pair of Zener diodes connected between a gate and a drain. CONSTITUTION: For a device 40, Zener diodes D1 and D2 are incorporated by providing it with a highly-doped P-type region 41, extended into a substrate 3 from the surface 4. Then, this is provided with a highly-doped N-type region 42 within the region 41, and further, it is extended into the region 41 from the surface 4. Then, the depth is shallower than the depth of the region 41 extended into the substrate 3. For example, an insulating layer 43 being silicon diode is made on the surface 4 of the device 40, and in addition, this has an opening 44 on the region 42. Moreover, the entire device 40 is made being provided with a proper conduction means 46 whose one end is connected to a metallic layer 45 and whose other end is connected to a lead wire 19, leading to a gate terminal. Hereby, the drain vs. source voltage does not exceed the breakdown voltage of the device 40 at all.
JP13663388A 1987-08-26 1988-06-02 Semiconductor device Pending JPS6461956A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US8978287A 1987-08-26 1987-08-26

Publications (1)

Publication Number Publication Date
JPS6461956A true JPS6461956A (en) 1989-03-08

Family

ID=22219557

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13663388A Pending JPS6461956A (en) 1987-08-26 1988-06-02 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS6461956A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008153142A1 (en) * 2007-06-15 2008-12-18 Rohm Co., Ltd. Semiconductor device
JP2011199141A (en) * 2010-03-23 2011-10-06 Nissan Motor Co Ltd Semiconductor device
JP2014116482A (en) * 2012-12-11 2014-06-26 Toyota Motor Corp Semiconductor device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008153142A1 (en) * 2007-06-15 2008-12-18 Rohm Co., Ltd. Semiconductor device
US8217419B2 (en) 2007-06-15 2012-07-10 Rohm Co., Ltd. Semiconductor device
US8729605B2 (en) 2007-06-15 2014-05-20 Rohm Co., Ltd. Semiconductor switch device
US9419127B2 (en) 2007-06-15 2016-08-16 Rohm Co., Ltd. Semiconductor device including switching devices in an epitaxial layer
JP2011199141A (en) * 2010-03-23 2011-10-06 Nissan Motor Co Ltd Semiconductor device
JP2014116482A (en) * 2012-12-11 2014-06-26 Toyota Motor Corp Semiconductor device

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