FR2275031B1 - - Google Patents

Info

Publication number
FR2275031B1
FR2275031B1 FR7518364A FR7518364A FR2275031B1 FR 2275031 B1 FR2275031 B1 FR 2275031B1 FR 7518364 A FR7518364 A FR 7518364A FR 7518364 A FR7518364 A FR 7518364A FR 2275031 B1 FR2275031 B1 FR 2275031B1
Authority
FR
France
Prior art keywords
layer
semi
doped region
conductor
june
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7518364A
Other languages
French (fr)
Other versions
FR2275031A1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of FR2275031A1 publication Critical patent/FR2275031A1/en
Application granted granted Critical
Publication of FR2275031B1 publication Critical patent/FR2275031B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12036—PN diode

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

1503545 Semi-conductor devices PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd 9 June 1975 [12 June 1974] 24621/75 Heading H1K An electroluminescent semi-conductor device has a monocrystalline semi-conductor body 1 of a III-V compound and comprises a doped region 2 which forms a PN junction 4 with an adjacent region 3, and a tin-doped indium oxide current conducting layer 5 whose sheet resistance is at most one third that of the doped region 2. The layer 5 forms a transparent electrode on a silicon oxide or nitride layer 6 and in an aperture 7 therein. A gold wire 9 is contacted with a bismuth oxide layer on the indium oxide layer 5 by thermocompression bonding. In an alternative embodiment the doped region 2 extends over the entire surface of the semiconductor body 1.
FR7518364A 1974-06-12 1975-06-12 ELECTROLUMINESCENT SEMICONDUCTOR DEVICE Granted FR2275031A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7407812A NL7407812A (en) 1974-06-12 1974-06-12 ELECTROLUMINESCATING SEMICONDUCTOR.

Publications (2)

Publication Number Publication Date
FR2275031A1 FR2275031A1 (en) 1976-01-09
FR2275031B1 true FR2275031B1 (en) 1978-10-27

Family

ID=19821526

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7518364A Granted FR2275031A1 (en) 1974-06-12 1975-06-12 ELECTROLUMINESCENT SEMICONDUCTOR DEVICE

Country Status (9)

Country Link
JP (2) JPS5111388A (en)
AU (1) AU498171B2 (en)
CA (1) CA1030643A (en)
CH (1) CH588168A5 (en)
DE (1) DE2523963A1 (en)
FR (1) FR2275031A1 (en)
GB (1) GB1503545A (en)
IT (1) IT1038801B (en)
NL (1) NL7407812A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003051216A (en) * 2001-08-07 2003-02-21 Furukawa Electric Co Ltd:The Ocean basin laying lengthy body

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5136875B2 (en) * 1971-11-02 1976-10-12

Also Published As

Publication number Publication date
CH588168A5 (en) 1977-05-31
GB1503545A (en) 1978-03-15
JPS53119872U (en) 1978-09-22
CA1030643A (en) 1978-05-02
AU8200975A (en) 1976-12-16
AU498171B2 (en) 1979-02-15
JPS5111388A (en) 1976-01-29
IT1038801B (en) 1979-11-30
FR2275031A1 (en) 1976-01-09
DE2523963A1 (en) 1976-01-02
NL7407812A (en) 1975-12-16

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Legal Events

Date Code Title Description
ST Notification of lapse