GB1281380A - Semiconductor devices - Google Patents
Semiconductor devicesInfo
- Publication number
- GB1281380A GB1281380A GB49688/69A GB4968869A GB1281380A GB 1281380 A GB1281380 A GB 1281380A GB 49688/69 A GB49688/69 A GB 49688/69A GB 4968869 A GB4968869 A GB 4968869A GB 1281380 A GB1281380 A GB 1281380A
- Authority
- GB
- United Kingdom
- Prior art keywords
- region
- conductivity type
- guard ring
- conductive layer
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 239000002019 doping agent Substances 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 229910052750 molybdenum Inorganic materials 0.000 abstract 1
- 239000011733 molybdenum Substances 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
1281380 Semi-conductor devices PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd 9 Oct 1969 [12 Oct 1968] 49688/69 Heading H1K A semi-conductor device includes a region 3 of one conductivity type, a region 4 of the opposite conductivity type, and at least one further region, 6, also of the opposite conductivity type extending laterally around the region 4 and forming guard ring(s), the surface of the device including an insulating layer 8 on which is formed a conductive layer, part 16 of which extends laterally around region 4 within the innermost guard ring, and part 18 of which makes contact to the region 3 beyond the guard ring(s). Parts 16 and 18 of the conductive layer are joined by narrow portions (17), Fig. 1 (not shown). The device may be a diode, or a transistor, as shown, including emitter region 11 of the one conductivity type, interdigitated with base region 4. Part 20 of the collector region 3 may be heavily doped to form a low resistance contact to part 18. The parts 16, 18 may be continuous or discontinuous. In an alternative embodiment, the conductive layer may consist of the part 16 and a tab only extending to the region 3. The substrate may be of silicon, germanium or a III-V compound, and the insulation layer 8 may be of silicon dioxide or silicon nitride. Electrodes may be of gold plated molybdenum, or aluminium. Dopants may be of boron and phosphorus. The arrangement is said to provide a stable, high voltage device by reducing the surface charges normally induced in the layer 8 within the guard ring(s).
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL6814636A NL6814636A (en) | 1968-10-12 | 1968-10-12 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1281380A true GB1281380A (en) | 1972-07-12 |
Family
ID=19804914
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB49688/69A Expired GB1281380A (en) | 1968-10-12 | 1969-10-09 | Semiconductor devices |
Country Status (11)
| Country | Link |
|---|---|
| AT (1) | AT320740B (en) |
| BE (1) | BE740138A (en) |
| BR (1) | BR6913234D0 (en) |
| CH (1) | CH500589A (en) |
| DE (1) | DE1950547B2 (en) |
| ES (1) | ES372372A1 (en) |
| FR (1) | FR2020590B1 (en) |
| GB (1) | GB1281380A (en) |
| NL (1) | NL6814636A (en) |
| SE (1) | SE362536B (en) |
| ZA (1) | ZA697031B (en) |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3391287A (en) * | 1965-07-30 | 1968-07-02 | Westinghouse Electric Corp | Guard junctions for p-nu junction semiconductor devices |
| FR1534295A (en) * | 1966-09-02 | 1968-07-26 | Motorola Inc | High voltage breakdown semiconductor junction, with a metallized ring |
-
1968
- 1968-10-12 NL NL6814636A patent/NL6814636A/xx unknown
-
1969
- 1969-10-03 DE DE19691950547 patent/DE1950547B2/en active Granted
- 1969-10-06 ZA ZA697031A patent/ZA697031B/en unknown
- 1969-10-09 GB GB49688/69A patent/GB1281380A/en not_active Expired
- 1969-10-09 CH CH1517369A patent/CH500589A/en not_active IP Right Cessation
- 1969-10-09 AT AT950969A patent/AT320740B/en not_active IP Right Cessation
- 1969-10-09 SE SE13903/69A patent/SE362536B/xx unknown
- 1969-10-10 BE BE740138D patent/BE740138A/xx unknown
- 1969-10-10 ES ES372372A patent/ES372372A1/en not_active Expired
- 1969-10-10 BR BR213234/69A patent/BR6913234D0/en unknown
- 1969-10-13 FR FR6935008A patent/FR2020590B1/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| ZA697031B (en) | 1971-05-27 |
| FR2020590B1 (en) | 1974-11-15 |
| BR6913234D0 (en) | 1973-01-11 |
| DE1950547A1 (en) | 1970-06-11 |
| ES372372A1 (en) | 1971-10-16 |
| DE1950547B2 (en) | 1973-03-01 |
| BE740138A (en) | 1970-04-10 |
| CH500589A (en) | 1970-12-15 |
| SE362536B (en) | 1973-12-10 |
| DE1950547C3 (en) | 1973-09-13 |
| FR2020590A1 (en) | 1970-07-17 |
| NL6814636A (en) | 1970-04-14 |
| AT320740B (en) | 1975-02-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PCNP | Patent ceased through non-payment of renewal fee |