GB1300726A - Semiconductor devices - Google Patents

Semiconductor devices

Info

Publication number
GB1300726A
GB1300726A GB1348270A GB1348270A GB1300726A GB 1300726 A GB1300726 A GB 1300726A GB 1348270 A GB1348270 A GB 1348270A GB 1348270 A GB1348270 A GB 1348270A GB 1300726 A GB1300726 A GB 1300726A
Authority
GB
United Kingdom
Prior art keywords
region
conductivity type
regions
march
semi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1348270A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electronics UK Ltd
Original Assignee
Philips Electronic and Associated Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronic and Associated Industries Ltd filed Critical Philips Electronic and Associated Industries Ltd
Publication of GB1300726A publication Critical patent/GB1300726A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors

Abstract

1300726 Semi-conductor devices PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd 20 March 1970 [25 March 1969] 13482/70 Heading H1K A semi-conductor device comprises a body 3 of one conductivity type, a surface region 4 of the opposite conductivity type, a further region 15 of the opposite conductivity type extending laterally around the region 4, and an annular channel-interrupting surface portion 18 situated beside the region 15 and between it and the surface region 4. The portion 18 may be a heavily doped region of the one conductivity type, and may adjoin the further region 15 as in Fig. 1, or may partially overlap the region 15 as in Fig. 2 (not shown) wherein the outer circumference of the region 18 lies between the inner and outer circumferences of the regions 15. In addition there may be more than one arrangement of further regions and associated channel-interrupting surface portions as in Fig. 4 (not shown). A further surface region 22, of the one conductivity type may surround the further region(s), and in one embodiment; Fig. 5 (not shown) a metal layer (21), e.g. of aluminium may be deposited on an insulating layer 6, e.g. of silicon oxide or nitride on the body 3 so as to overlie the region(s) 15 and 18 and also be contacted to the region (22). The device may be a transistor, for which purpose an emitter 9 may be formed, and this and the base region 4 may be interdigitated. The body may be of silicon, germanium or a III-V compound, and may have boron and phosphorus dopants. In an alternative diode embdoiment, Fig. 3 (not shown), the portion 18 may be formed by a part of the body 3 lying below an annular gap in the insulating layer 6, the gap lying between the regions 4 and 15. The arrangements are stated to increase reverse breakdown voltage between region 4 and body 3. Specification 1,299,804 is referred to.
GB1348270A 1969-03-25 1970-03-20 Semiconductor devices Expired GB1300726A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6904543A NL6904543A (en) 1969-03-25 1969-03-25

Publications (1)

Publication Number Publication Date
GB1300726A true GB1300726A (en) 1972-12-20

Family

ID=19806513

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1348270A Expired GB1300726A (en) 1969-03-25 1970-03-20 Semiconductor devices

Country Status (9)

Country Link
BE (1) BE747892A (en)
BR (1) BR7017682D0 (en)
CH (1) CH504102A (en)
DE (1) DE2012945C3 (en)
ES (1) ES377825A1 (en)
FR (1) FR2037251B1 (en)
GB (1) GB1300726A (en)
NL (1) NL6904543A (en)
SE (1) SE349425B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0631320A1 (en) * 1993-06-28 1994-12-28 Motorola, Inc. High voltage semiconductor structure

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2108781B1 (en) * 1970-10-05 1974-10-31 Radiotechnique Compelec
JPS573225B2 (en) * 1974-08-19 1982-01-20
IN144541B (en) * 1975-06-11 1978-05-13 Rca Corp
DE2846637A1 (en) * 1978-10-11 1980-04-30 Bbc Brown Boveri & Cie SEMICONDUCTOR COMPONENT WITH AT LEAST ONE PLANAR PN JUNCTION AND ZONE GUARD RINGS

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA667423A (en) * 1963-07-23 Northern Electric Company Limited Semiconductor device and method of manufacture
FR1337348A (en) * 1961-09-08 1963-09-13 Pacific Semiconductors Coupling transistors
NL282779A (en) * 1961-09-08
FR1417163A (en) * 1963-08-27 1965-11-12 Ibm Semiconductor devices and their manufacture
GB1030050A (en) * 1963-11-13 1966-05-18 Motorola Inc Punchthrough breakdown rectifier
CA956038A (en) * 1964-08-20 1974-10-08 Roy W. Stiegler (Jr.) Semiconductor devices with field electrodes
FR1459892A (en) * 1964-08-20 1966-06-17 Texas Instruments Inc Semiconductor devices
DE1273700B (en) * 1965-04-07 1968-07-25 Itt Ind Ges Mit Beschraenkter Semiconductor component
FR1475201A (en) * 1965-04-07 1967-03-31 Itt Flat semiconductor device
US3391287A (en) * 1965-07-30 1968-07-02 Westinghouse Electric Corp Guard junctions for p-nu junction semiconductor devices

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0631320A1 (en) * 1993-06-28 1994-12-28 Motorola, Inc. High voltage semiconductor structure

Also Published As

Publication number Publication date
FR2037251A1 (en) 1970-12-31
NL6904543A (en) 1970-09-29
SE349425B (en) 1972-09-25
ES377825A1 (en) 1972-05-16
DE2012945C3 (en) 1985-01-31
FR2037251B1 (en) 1974-09-20
CH504102A (en) 1971-02-28
DE2012945B2 (en) 1977-12-29
DE2012945A1 (en) 1970-10-08
BE747892A (en) 1970-09-24
BR7017682D0 (en) 1973-04-17

Similar Documents

Publication Publication Date Title
GB1138237A (en) Guard junctions for p-n junction semiconductor devices
GB1520921A (en) Semiconductor devices
GB1111663A (en) Improvements in or relating to semiconductor devices
GB1301345A (en)
GB1229776A (en)
GB1049017A (en) Improvements relating to semiconductor devices and their fabrication
GB1073551A (en) Integrated circuit comprising a diode and method of making the same
GB1060208A (en) Avalanche transistor
GB998388A (en) Improvements in or relating to semiconductor junction devices
GB1300726A (en) Semiconductor devices
GB949646A (en) Improvements in or relating to semiconductor devices
GB1334745A (en) Semiconductor devices
GB1103184A (en) Improvements relating to semiconductor circuits
GB1076371A (en) Semiconductor device with auxiliary junction for enhancing breakdown voltage of primary junction
GB1106787A (en) Improvements in semiconductor devices
GB2019645A (en) Semiconductor device protected against overvoltages
GB1127629A (en) Improved semi-conductor element
GB1238876A (en)
FR2363897A1 (en) Darlington amplifier with heavily doped buried regions - forming a diode with high breakdown voltage
GB1245765A (en) Surface diffused semiconductor devices
GB1007936A (en) Improvements in or relating to semiconductive devices
GB1110321A (en) Improvements in or relating to semiconductor devices
GB1480050A (en) Semiconductor device
GB1048424A (en) Improvements in or relating to semiconductor devices
GB1481184A (en) Integrated circuits

Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee