GB1480050A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- GB1480050A GB1480050A GB4507574A GB4507574A GB1480050A GB 1480050 A GB1480050 A GB 1480050A GB 4507574 A GB4507574 A GB 4507574A GB 4507574 A GB4507574 A GB 4507574A GB 1480050 A GB1480050 A GB 1480050A
- Authority
- GB
- United Kingdom
- Prior art keywords
- base
- collector
- low resistivity
- thick
- thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000002955 isolation Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
1480050 Semi-conductor devices PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd 17 Oct 1974 [20 Oct 1973] 45075/74 Heading H1K A semi-conductor device includes a transistor in which the collector has high and low resistivity portions 13, 17 and the base has thick and thin portions 24b, 24a, the high resistivity collector part 13 extending at least partly between the base and the low resistivity collector part 17 which extends across the whole base area. The thick base part 24b entirely surrounds the thin part 24a at the surface and extends down to at least the low resistivity collector part 17. As shown, the transistor forms part of an I.C. in which isolation zones 15 separates one island 13 from an adjacent island 14 in which is formed a conventional transistor. The base contact 28 overlies only the thick base part 24b and the base is surrounded at the surface by a further low resistivity part 26 of the collector 13. The emitter 23 covers the whole of the thin base part area 24a. In another arrangement, the further low resistivity part (5c, Fig. 2, not shown) of the collector extends from the surface only partly through the high resistivity portion (5b) and does not connect with the main low resistivity portion (5a).
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL7314466A NL7314466A (en) | 1973-10-20 | 1973-10-20 | SEMI-GUIDE DEVICE. |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1480050A true GB1480050A (en) | 1977-07-20 |
Family
ID=19819856
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB4507574A Expired GB1480050A (en) | 1973-10-20 | 1974-10-17 | Semiconductor device |
Country Status (6)
Country | Link |
---|---|
JP (1) | JPS5513427B2 (en) |
CH (1) | CH573664A5 (en) |
DE (1) | DE2447867A1 (en) |
FR (1) | FR2248615B1 (en) |
GB (1) | GB1480050A (en) |
NL (1) | NL7314466A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2004040643A1 (en) * | 2002-10-28 | 2004-05-13 | Infineon Technologies Ag | Method for producing a transistor structure |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4199775A (en) * | 1974-09-03 | 1980-04-22 | Bell Telephone Laboratories, Incorporated | Integrated circuit and method for fabrication thereof |
DE2805008A1 (en) * | 1978-02-06 | 1979-08-09 | Siemens Ag | HF transistor with strip shaped emitter zone - has collector doping in strips or grid to reduce collector-base capacitance |
DE10044838C2 (en) | 2000-09-11 | 2002-08-08 | Infineon Technologies Ag | Semiconductor component and method for producing such |
CN107249772B (en) | 2015-01-26 | 2019-06-14 | 新日铁住金株式会社 | Face shape defect generates or reason region estimating method, device and recording medium |
-
1973
- 1973-10-20 NL NL7314466A patent/NL7314466A/en unknown
-
1974
- 1974-10-08 DE DE19742447867 patent/DE2447867A1/en not_active Withdrawn
- 1974-10-17 CH CH1394674A patent/CH573664A5/xx not_active IP Right Cessation
- 1974-10-17 GB GB4507574A patent/GB1480050A/en not_active Expired
- 1974-10-19 JP JP11991374A patent/JPS5513427B2/ja not_active Expired
- 1974-10-21 FR FR7435271A patent/FR2248615B1/fr not_active Expired
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2004040643A1 (en) * | 2002-10-28 | 2004-05-13 | Infineon Technologies Ag | Method for producing a transistor structure |
KR100725618B1 (en) * | 2002-10-28 | 2007-06-07 | 인피네온 테크놀로지스 아게 | Method for producing a transistor structure |
CN1331213C (en) * | 2002-10-28 | 2007-08-08 | 因芬尼昂技术股份公司 | Method for producing a transistor structure |
US7371650B2 (en) | 2002-10-28 | 2008-05-13 | Infineon Technologies Ag | Method for producing a transistor structure |
SG155055A1 (en) * | 2002-10-28 | 2009-09-30 | Infineon Technologies Ag | Method for producing a transistor structure |
Also Published As
Publication number | Publication date |
---|---|
JPS5513427B2 (en) | 1980-04-09 |
CH573664A5 (en) | 1976-03-15 |
FR2248615B1 (en) | 1979-02-16 |
NL7314466A (en) | 1975-04-22 |
JPS5068783A (en) | 1975-06-09 |
DE2447867A1 (en) | 1975-04-30 |
FR2248615A1 (en) | 1975-05-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed | ||
PCNP | Patent ceased through non-payment of renewal fee |