GB1480050A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
GB1480050A
GB1480050A GB4507574A GB4507574A GB1480050A GB 1480050 A GB1480050 A GB 1480050A GB 4507574 A GB4507574 A GB 4507574A GB 4507574 A GB4507574 A GB 4507574A GB 1480050 A GB1480050 A GB 1480050A
Authority
GB
United Kingdom
Prior art keywords
base
collector
low resistivity
thick
thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4507574A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electronics UK Ltd
Original Assignee
Philips Electronic and Associated Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronic and Associated Industries Ltd filed Critical Philips Electronic and Associated Industries Ltd
Publication of GB1480050A publication Critical patent/GB1480050A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

1480050 Semi-conductor devices PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd 17 Oct 1974 [20 Oct 1973] 45075/74 Heading H1K A semi-conductor device includes a transistor in which the collector has high and low resistivity portions 13, 17 and the base has thick and thin portions 24b, 24a, the high resistivity collector part 13 extending at least partly between the base and the low resistivity collector part 17 which extends across the whole base area. The thick base part 24b entirely surrounds the thin part 24a at the surface and extends down to at least the low resistivity collector part 17. As shown, the transistor forms part of an I.C. in which isolation zones 15 separates one island 13 from an adjacent island 14 in which is formed a conventional transistor. The base contact 28 overlies only the thick base part 24b and the base is surrounded at the surface by a further low resistivity part 26 of the collector 13. The emitter 23 covers the whole of the thin base part area 24a. In another arrangement, the further low resistivity part (5c, Fig. 2, not shown) of the collector extends from the surface only partly through the high resistivity portion (5b) and does not connect with the main low resistivity portion (5a).
GB4507574A 1973-10-20 1974-10-17 Semiconductor device Expired GB1480050A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7314466A NL7314466A (en) 1973-10-20 1973-10-20 SEMI-GUIDE DEVICE.

Publications (1)

Publication Number Publication Date
GB1480050A true GB1480050A (en) 1977-07-20

Family

ID=19819856

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4507574A Expired GB1480050A (en) 1973-10-20 1974-10-17 Semiconductor device

Country Status (6)

Country Link
JP (1) JPS5513427B2 (en)
CH (1) CH573664A5 (en)
DE (1) DE2447867A1 (en)
FR (1) FR2248615B1 (en)
GB (1) GB1480050A (en)
NL (1) NL7314466A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004040643A1 (en) * 2002-10-28 2004-05-13 Infineon Technologies Ag Method for producing a transistor structure

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4199775A (en) * 1974-09-03 1980-04-22 Bell Telephone Laboratories, Incorporated Integrated circuit and method for fabrication thereof
DE2805008A1 (en) * 1978-02-06 1979-08-09 Siemens Ag HF transistor with strip shaped emitter zone - has collector doping in strips or grid to reduce collector-base capacitance
DE10044838C2 (en) 2000-09-11 2002-08-08 Infineon Technologies Ag Semiconductor component and method for producing such
CN107249772B (en) 2015-01-26 2019-06-14 新日铁住金株式会社 Face shape defect generates or reason region estimating method, device and recording medium

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004040643A1 (en) * 2002-10-28 2004-05-13 Infineon Technologies Ag Method for producing a transistor structure
KR100725618B1 (en) * 2002-10-28 2007-06-07 인피네온 테크놀로지스 아게 Method for producing a transistor structure
CN1331213C (en) * 2002-10-28 2007-08-08 因芬尼昂技术股份公司 Method for producing a transistor structure
US7371650B2 (en) 2002-10-28 2008-05-13 Infineon Technologies Ag Method for producing a transistor structure
SG155055A1 (en) * 2002-10-28 2009-09-30 Infineon Technologies Ag Method for producing a transistor structure

Also Published As

Publication number Publication date
JPS5513427B2 (en) 1980-04-09
CH573664A5 (en) 1976-03-15
FR2248615B1 (en) 1979-02-16
NL7314466A (en) 1975-04-22
JPS5068783A (en) 1975-06-09
DE2447867A1 (en) 1975-04-30
FR2248615A1 (en) 1975-05-16

Similar Documents

Publication Publication Date Title
GB1357516A (en) Method of manufacturing an mos integrated circuit
GB1425986A (en) Semiconductor devices comprising insulated-gate- field-effect transistors
MY6900284A (en) Semiconductor devices containing two or more circuit elements therein
JPS54157092A (en) Semiconductor integrated circuit device
GB988903A (en) Semiconductor devices and methods of making same
GB1148417A (en) Integrated circuit structures including controlled rectifiers or their structural equivalents and method of making the same
GB1397086A (en) Semiconductor device having darlington circuit
ES393035A1 (en) Semiconductor devices having local oxide isolation
GB1143308A (en) A semiconductor device assembly
GB1480050A (en) Semiconductor device
GB1311446A (en) Semiconductor devices
GB1450750A (en) Semiconductor darlington circuit
GB1223705A (en) Semiconductor devices
GB1450749A (en) Semiconductor darlington circuit
GB1477514A (en) Semiconductor devices
GB1106787A (en) Improvements in semiconductor devices
JPS57162365A (en) Semiconductor device
GB1127629A (en) Improved semi-conductor element
GB1531811A (en) Complementary transistors and their manufacture
GB1315583A (en) Integrated circuit
GB1036051A (en) Microelectronic device
GB958246A (en) Transistors and methods of making same
GB1300726A (en) Semiconductor devices
GB1305324A (en)
GB1481184A (en) Integrated circuits

Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee