DE2805008A1 - HF transistor with strip shaped emitter zone - has collector doping in strips or grid to reduce collector-base capacitance - Google Patents

HF transistor with strip shaped emitter zone - has collector doping in strips or grid to reduce collector-base capacitance

Info

Publication number
DE2805008A1
DE2805008A1 DE19782805008 DE2805008A DE2805008A1 DE 2805008 A1 DE2805008 A1 DE 2805008A1 DE 19782805008 DE19782805008 DE 19782805008 DE 2805008 A DE2805008 A DE 2805008A DE 2805008 A1 DE2805008 A1 DE 2805008A1
Authority
DE
Germany
Prior art keywords
collector
base
doping
strips
zone
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE19782805008
Other languages
German (de)
Inventor
Gerhard Krause
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Priority to DE19782805008 priority Critical patent/DE2805008A1/en
Publication of DE2805008A1 publication Critical patent/DE2805008A1/en
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0821—Collector regions of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0804—Emitter regions of bipolar transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)

Abstract

The strip-, or grid-shaped emitter zone is embedded in the high frequency transistor base zone. In order to reduce the collector-base capacitance, the doping of the collector is also carried out in strips, or grid pattern. Preferably the collector doping near the emitter zone is considerably higher than between the individual emitter strips. Typically the collector doping is 2 . 1015 cm-3, being obtained by implantation or diffusion. The base thickness near the base contacts penetrates deeper into the semiconductor substrate than in contact-free regions.

Description

Ho cbfre quenztransi storHo cbfrequenztransi stor

Die Erfindung betrifft einen Hochfrequenztransistor mit einer Basiszone und einer in die Basiszone eingebrachten streifen- beziehungsweise gitterförmigen Emitterzone.The invention relates to a high-frequency transistor with a base zone and one introduced into the base zone in the form of a strip or grid Emitter zone.

Hochfrequenztransistoren haben bekanntlich streifen-oder gitterförmige Emitterzonen. Diese Emitterzonen können zwar sehr schmal hergestellt werden, jedoch ist ein enger Abstand zwischen einzelnen Streifen nicht möglich. Außerdem würden kleine Basisanschlußbreiten dem Basiskontaktwiderstand in unerwünschter Weise erhöhen. Dies bedeutet, daß die Basisfläche eines Hochfrequenztransistors viel größer als die Emitterfläche und damit als die tatsächlich wirksame Basisfläche ist.As is known, high-frequency transistors are strip-shaped or lattice-shaped Emitter zones. These emitter zones can be made very narrow, however a close spacing between individual strips is not possible. Besides, would small base connection widths undesirably increase the base contact resistance. This means that the base area of a high frequency transistor is much larger than is the emitter area and thus the actually effective base area.

Hierdurch wird die Kollektor-Basis-Kapazität erhöht und somit die Verstärkung verringert.This increases the collector-base capacity and thus the Gain decreased.

Es ist daher Aufgabe der Erfindung, einen Hochfrequenztransistor mit geringer Kollektor-Basis-Kapazität und hoher Verstärkung anzugeben.It is therefore an object of the invention to provide a high-frequency transistor with indicate low collector-base capacitance and high gain.

Diese Aufgabe wird erfindungsgemäß dadurch gelöst, daß zur Verringerung der Kollektor-Basis-Kapazität die Kollektordotierung streifen- beziehungsweise gitterförmig ausgeführt ist.This object is achieved according to the invention in that to reduce of the collector-base capacitance, the collector doping is strip-shaped or lattice-shaped is executed.

Bei der Erfindung wird also die Kollektordotierung streifen- beziehungsweise gitterförmig ausgeführt, wodurch sich die Kollektor-Basis-Kapazität verringert.In the invention, the collector doping is strip or In the form of a grid, which reduces the collector-base capacitance.

Vorzugsweise wird dabei die Kollektordotierung in der Nähe zu den Emitterstreifen wesentlich höher gewählt als zwischen den Emitterstreifen.The collector doping is preferably close to the Emitter strips chosen to be much higher than between the emitter strips.

Nachfolgend wird die Erfindung an Hand der Zeichnung näher erläutert, in deren einziger Figur ein Hochfrequenztransistor im Schnitt gezeigt ist.The invention is explained in more detail below with reference to the drawing, in the single figure of which a high-frequency transistor is shown in section.

Auf ein mit etwa 5 . 1018 Atomen/cm3 dotiertes N-leitendes Substrat 1 wird eine mit höchstens 1014 Atomen/cm3 dotierte N-leitende epitaktische Schicht 2 aufgebracht. In diese epitaktische Schicht 2 werden durch Diffusion oder Implantation mit etwa 2 . 1015 Atomen/cm3 höher dotierte N-leitende Streifen beziehungsweise Flecken 3 eingebracht. Diese Streifen oder Flecken 3 reichen bis zum Substrat 1. Anschließend wird auf die Schicht 2 eine weitere epitaktische Schicht 4 aufgebracht, die N-leitend ist und eine Dotierung von 1017 Atomen/cm3 aufweist. Die weitere epitaktische Schicht 4 kann auch gleich die Basisdotierung enthalten, wenn die Basis seitlich durch eine Mesaätzung oder eine Oxydisolation oder eine N-dotierte Zone begrenzt wird. In diese Schicht 4 wird sodann durch Diffusion oder Implantation eine P-dotierte Basiszone 5 bis zur Schicht 2 eingebracht. Schließlich werden in diese Basiszone 5 durch Diffusion oder Implantation oberhalb der Streifen 3 Emitterstreifen 6 eingebracht, die N-leitend sind.On a with about 5. 1018 atoms / cm3 doped N-conductive substrate 1 becomes an N-type epitaxial layer doped with a maximum of 1014 atoms / cm3 2 applied. In this epitaxial layer 2 are by diffusion or implantation with about 2. 1015 atoms / cm3 higher doped N-type strips respectively Stains 3 introduced. These strips or spots 3 extend as far as the substrate 1. A further epitaxial layer 4 is then applied to layer 2, which is N-conductive and has a doping of 1017 atoms / cm3. The more epitaxial Layer 4 can also contain the base doping, if the base is on the side limited by a mesa etching or an oxide insulation or an N-doped zone will. A P-doped layer is then made into this layer 4 by diffusion or implantation Base zone 5 introduced up to layer 2. Finally, in this base zone 5 by diffusion or implantation above the strips 3 emitter strips 6 introduced, which are N-conductive.

Um den Basisanschlußwiderstand zu verringern, kann die Basiszone 5 im Basiskontaktbereich tiefer in die Schicht 4 eingebracht werden, wie dies durch eine Ausbuchtung 7 angedeutet ist. Da nämlich diese Ausbuchtung 7 an einen hochohmigen Kollektorbereich angrenzt, ist die dadurch hierbei geführte Kollektor-Basis-Kapazität nur gering.In order to reduce the base connection resistance, the base zone 5 be introduced deeper into the layer 4 in the base contact area, as is done by a bulge 7 is indicated. Because this bulge 7 to a high resistance The collector-base capacitance is thereby carried out only slightly.

Selbstverständlich kann der erfindungsgemäße Hochfrequenztransistor auch integriert ausgeführt und/oder für logische Schaltkreise verwendet werden.Of course, the high-frequency transistor according to the invention can also be integrated and / or used for logic circuits.

5 Patentansprüche 1 Figur5 claims 1 figure

Claims (5)

Patentansprüche 91. Hochfrequenztransistor mit einer Basiszone und einer in die Basiszone eingebrachten streifen- beziehungsweise gitterförmigen Emitterzone, d a d u r c h g e -k e n n z e i c h n e t , daß zur Verringerung der Kollektor-Basis-Kapazität die Kollektordotierung streifen- beziehungsweise gitterförmig ausgeführt ist.Claims 91. High-frequency transistor with a base zone and a strip or grid-shaped emitter zone introduced into the base zone, d a d u r c h g e -k e n n z e i c h n e t that to reduce the collector-base capacitance the collector doping is designed in the form of a strip or grid. 2. Hochfrequenztransistor nach Anspruch 1, d a -d u r c h g e k e n n z e i c h n e t , daß die Kollektordotierung in der Nähe der Emitterzone wesentlich höher ist als zwischen einzelnen Teilen der Emitterzone (Emitterstreifen).2. High-frequency transistor according to claim 1, d a -d u r c h g e k e It should be noted that the collector doping in the vicinity of the emitter zone is essential is higher than between individual parts of the emitter zone (emitter strip). 3. Hochfrequenztransistor nach Anspruch 1 oder 2, d a d u r c h g e k e n n z e i c h n e t , daß die Kollektordotierung etwa 2 . 1015 cm 3 beträgt. 3. High-frequency transistor according to claim 1 or 2, d a d u r c h g I do not know that the collector doping is around 2. 1015 cm 3. 4. Hochfrequenztransistor nach einem der Ansprüche 1 bis 3, d a d u r c h g e k e n n z e i c h n e t daß die Kollektordotierung durch Implantation oder Diffusion erfolgt.4. High frequency transistor according to one of claims 1 to 3, d a d Acknowledgments that the collector doping by implantation or diffusion occurs. 5. Hochfrequenztrensistor nach einem der Ansprüche 1 o bis 4, d a d u r c h g e k e n n z e i c h n e t daß die Basisdicke in der Nähe der Basiskontakte tiefer in den Halbleiterkörper hineinreicht als in den kontaktfernen Gebieten. 5. High frequency transistor according to one of claims 1 o to 4, d a it is noted that the base thickness is close to the base contacts extends deeper into the semiconductor body than in the areas remote from the contact.
DE19782805008 1978-02-06 1978-02-06 HF transistor with strip shaped emitter zone - has collector doping in strips or grid to reduce collector-base capacitance Ceased DE2805008A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE19782805008 DE2805008A1 (en) 1978-02-06 1978-02-06 HF transistor with strip shaped emitter zone - has collector doping in strips or grid to reduce collector-base capacitance

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19782805008 DE2805008A1 (en) 1978-02-06 1978-02-06 HF transistor with strip shaped emitter zone - has collector doping in strips or grid to reduce collector-base capacitance

Publications (1)

Publication Number Publication Date
DE2805008A1 true DE2805008A1 (en) 1979-08-09

Family

ID=6031282

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19782805008 Ceased DE2805008A1 (en) 1978-02-06 1978-02-06 HF transistor with strip shaped emitter zone - has collector doping in strips or grid to reduce collector-base capacitance

Country Status (1)

Country Link
DE (1) DE2805008A1 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0214802A2 (en) * 1985-08-26 1987-03-18 Matsushita Electric Industrial Co., Ltd. Semiconductor device having an abrupt junction and method of manufacturing same using epitaxy
DE3903284A1 (en) * 1988-02-03 1989-08-17 Toshiba Kawasaki Kk BIPOLAR TRANSISTOR
WO2004008542A1 (en) * 2002-07-16 2004-01-22 Infineon Technologies Ag Bipolar high-frequency transistor and method for the production thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1614827B1 (en) * 1967-06-22 1972-05-31 Telefunken Patent Method of manufacturing a transistor
DE2447867A1 (en) * 1973-10-20 1975-04-30 Philips Nv SEMI-CONDUCTOR ARRANGEMENT

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1614827B1 (en) * 1967-06-22 1972-05-31 Telefunken Patent Method of manufacturing a transistor
DE2447867A1 (en) * 1973-10-20 1975-04-30 Philips Nv SEMI-CONDUCTOR ARRANGEMENT

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
US-ZS: "Proc. of the IEEE", Bd. 50, Nr. 4, April 1968, Seiten 742 und 743 *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0214802A2 (en) * 1985-08-26 1987-03-18 Matsushita Electric Industrial Co., Ltd. Semiconductor device having an abrupt junction and method of manufacturing same using epitaxy
EP0214802A3 (en) * 1985-08-26 1987-09-02 Matsushita Electric Industrial Co., Ltd. Semiconductor device having an abrupt junction and method of manufacturing same using epitaxy
DE3903284A1 (en) * 1988-02-03 1989-08-17 Toshiba Kawasaki Kk BIPOLAR TRANSISTOR
WO2004008542A1 (en) * 2002-07-16 2004-01-22 Infineon Technologies Ag Bipolar high-frequency transistor and method for the production thereof

Similar Documents

Publication Publication Date Title
DE2449688A1 (en) PROCESS FOR PRODUCING A DOPED ZONE OF A CONDUCTIVITY TYPE IN A SEMICONDUCTOR BODY AND TRANSISTOR PRODUCED BY THIS PROCESS
DE2507366C3 (en) Method for suppressing parasitic circuit elements
DE3509899A1 (en) MOS TRANSISTOR ARRANGEMENT WITH VARIABLE CONDUCTIVITY
DE1944793C3 (en) Method for manufacturing an integrated semiconductor device
CH615781A5 (en)
CH661150A5 (en) METHOD FOR PRODUCING A NARROW NUT IN A SUBSTRATE AREA, IN PARTICULAR A SEMICONDUCTOR SUBSTRATE AREA.
DE2805442A1 (en) PROCESS FOR PRODUCING A SCHOTTKY BARRIER LAYER SEMI-CONDUCTOR COMPONENT
DE2605641C3 (en) High frequency transistor and process for its manufacture
DE2133979C3 (en) Method for manufacturing a semiconductor device
DE2627203A1 (en) Semiconductor device and process for its production
DE2124764A1 (en) Method for producing a semiconductor arrangement
DE3020609C2 (en) Method for manufacturing an integrated circuit having at least one I → 2 → L element
DE1259469B (en) Process for the production of inversion layer-free semiconductor junctions
DE2364752A1 (en) SEMI-CONDUCTOR DEVICE
DE2728845A1 (en) METHOD OF MANUFACTURING A HIGH FREQUENCY TRANSISTOR
DE2236897A1 (en) METHOD FOR MANUFACTURING SEMI-CONDUCTIVE COMPONENTS
DE2805008A1 (en) HF transistor with strip shaped emitter zone - has collector doping in strips or grid to reduce collector-base capacitance
DE2600375A1 (en) MORE COMPLEMENTARY TRANSISTOR STRUCTURE AND METHOD FOR PRODUCING IT
DE1644025A1 (en) Semiconductor arrangement with diffused zone transitions
DE2627922A1 (en) SEMI-CONDUCTOR COMPONENT
DE2510951A1 (en) METHOD FOR PRODUCING A SEMICONDUCTOR ARRANGEMENT WITH AN INSULATING LAYER SINKED IN A SEMICONDUCTOR BODY AND A SEMICONDUCTOR ARRANGEMENT PRODUCED BY THIS METHOD
DE19523333A1 (en) Bipolar semiconductor device
DE1764765A1 (en) Semiconductor component
CH619072A5 (en)
DE2431813C2 (en) Process for forming a diffusion-inhibiting, buried layer in the manufacture of a semiconductor component

Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
8131 Rejection