ES372372A1 - Semiconductor devices - Google Patents

Semiconductor devices

Info

Publication number
ES372372A1
ES372372A1 ES372372A ES372372A ES372372A1 ES 372372 A1 ES372372 A1 ES 372372A1 ES 372372 A ES372372 A ES 372372A ES 372372 A ES372372 A ES 372372A ES 372372 A1 ES372372 A1 ES 372372A1
Authority
ES
Spain
Prior art keywords
region
additional
regions
insulating layer
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES372372A
Other languages
Spanish (es)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of ES372372A1 publication Critical patent/ES372372A1/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

A semiconductor device comprising a semiconductor body having a first region of a first type of conductivity contiguous to a substantially flat surface of the body, a second region of the opposite conductivity type contiguous to said surface and surrounded in the semiconductor body, entirely by said first region, terminating the pn junction between said regions on said surface, and, in order to increase the drilling tension between said regions, at least one additional region of the opposite conductivity type, located next to the second region and contiguous to said surface and completely surrounded in the semiconductor body, by the first region, terminating the pn junction between the first region and the additional region, on said surface, and surrounding the additional region to the second region, an insulating layer being provided on said surface and having an opening in which a contact layer is provided for the second region, ca characterized in that a conductive layer is provided in the insulating layer and comprises a first part that surrounds the contact layer substantially completely, and in which, in any direction parallel to the insulating layer, the distance or distances between the contact layer and the additional region or regions are greater than the distance between the contact layer and the first part, a second part that substantially completely surrounds the additional region or regions and is connected to a surface part of the first region that is free of the insulating layer and which, seen from the second region, is located beyond the additional region or regions and at least one additional part connecting the first part to the second part, the insulating layer being covered between the first and second parts by the conductive layer only in a small portion. (Machine-translation by Google Translate, not legally binding)
ES372372A 1968-10-12 1969-10-10 Semiconductor devices Expired ES372372A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6814636A NL6814636A (en) 1968-10-12 1968-10-12

Publications (1)

Publication Number Publication Date
ES372372A1 true ES372372A1 (en) 1971-10-16

Family

ID=19804914

Family Applications (1)

Application Number Title Priority Date Filing Date
ES372372A Expired ES372372A1 (en) 1968-10-12 1969-10-10 Semiconductor devices

Country Status (11)

Country Link
AT (1) AT320740B (en)
BE (1) BE740138A (en)
BR (1) BR6913234D0 (en)
CH (1) CH500589A (en)
DE (1) DE1950547B2 (en)
ES (1) ES372372A1 (en)
FR (1) FR2020590B1 (en)
GB (1) GB1281380A (en)
NL (1) NL6814636A (en)
SE (1) SE362536B (en)
ZA (1) ZA697031B (en)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3391287A (en) * 1965-07-30 1968-07-02 Westinghouse Electric Corp Guard junctions for p-nu junction semiconductor devices
FR1534295A (en) * 1966-09-02 1968-07-26 Motorola Inc High voltage breakdown semiconductor junction, with a metallized ring

Also Published As

Publication number Publication date
NL6814636A (en) 1970-04-14
FR2020590B1 (en) 1974-11-15
GB1281380A (en) 1972-07-12
BE740138A (en) 1970-04-10
DE1950547A1 (en) 1970-06-11
FR2020590A1 (en) 1970-07-17
DE1950547C3 (en) 1973-09-13
CH500589A (en) 1970-12-15
AT320740B (en) 1975-02-25
ZA697031B (en) 1971-05-27
DE1950547B2 (en) 1973-03-01
SE362536B (en) 1973-12-10
BR6913234D0 (en) 1973-01-11

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