ES325287A1 - Improvements in a semiconductor device (Machine-translation by Google Translate, not legally binding) - Google Patents

Improvements in a semiconductor device (Machine-translation by Google Translate, not legally binding)

Info

Publication number
ES325287A1
ES325287A1 ES0325287A ES325287A ES325287A1 ES 325287 A1 ES325287 A1 ES 325287A1 ES 0325287 A ES0325287 A ES 0325287A ES 325287 A ES325287 A ES 325287A ES 325287 A1 ES325287 A1 ES 325287A1
Authority
ES
Spain
Prior art keywords
translation
machine
semiconductor device
legally binding
google translate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES0325287A
Other languages
Spanish (es)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nokia Spain SA
Original Assignee
Alcatel Espana SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alcatel Espana SA filed Critical Alcatel Espana SA
Publication of ES325287A1 publication Critical patent/ES325287A1/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
    • C23G1/14—Cleaning or pickling metallic material with solutions or molten salts with alkaline solutions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Bipolar Transistors (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

Improvements in a semiconductor device formed by a semiconductor body of a conductivity type having a first conductivity region of opposite type with a first connection pn between them that extends to a surface of said body; Y an additional region of said opposite conductivity type placed in and surrounded by said body forming a second union pn with said body extending on said surface, the distance between said first and said second union pn being in the vicinity of said surface such that the Spatial charge regions associated with said junctions are within the semiconductor body. (Machine-translation by Google Translate, not legally binding)
ES0325287A 1965-04-07 1966-04-06 Improvements in a semiconductor device (Machine-translation by Google Translate, not legally binding) Expired ES325287A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DEST23638A DE1273700B (en) 1965-04-07 1965-04-07 Semiconductor component

Publications (1)

Publication Number Publication Date
ES325287A1 true ES325287A1 (en) 1967-04-01

Family

ID=7459814

Family Applications (1)

Application Number Title Priority Date Filing Date
ES0325287A Expired ES325287A1 (en) 1965-04-07 1966-04-06 Improvements in a semiconductor device (Machine-translation by Google Translate, not legally binding)

Country Status (5)

Country Link
BE (1) BE679171A (en)
DE (1) DE1273700B (en)
ES (1) ES325287A1 (en)
GB (1) GB1078547A (en)
NL (1) NL6604583A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6904543A (en) * 1969-03-25 1970-09-29

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1905127A1 (en) * 1968-03-18 1969-10-16 Schwermaschb Nobas Nordhausen Hydraulic wheel hub drive for heavy duty vehicles

Also Published As

Publication number Publication date
GB1078547A (en) 1967-08-09
BE679171A (en) 1966-10-17
NL6604583A (en) 1966-10-10
DE1273700B (en) 1968-07-25

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