GB1078547A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- GB1078547A GB1078547A GB15561/66A GB1556166A GB1078547A GB 1078547 A GB1078547 A GB 1078547A GB 15561/66 A GB15561/66 A GB 15561/66A GB 1556166 A GB1556166 A GB 1556166A GB 1078547 A GB1078547 A GB 1078547A
- Authority
- GB
- United Kingdom
- Prior art keywords
- guard ring
- region
- diffused
- base
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 230000015556 catabolic process Effects 0.000 abstract 2
- 239000004922 lacquer Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
- C23G1/14—Cleaning or pickling metallic material with solutions or molten salts with alkaline solutions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Ceramic Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Bipolar Transistors (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
1,078,547. Semi-conductor devices. ITT INDUSTRIES Inc. April 7, 1966 [April 7, 1965], No. 15561/66. Heading H1K. The breakdown voltage of a reverse biased PN junction is increased by surrounding it with a surface " guard ring " region defining a second PN junction, the spacing between the junctions being such that in use their space charge regions merge at a voltage less than the breakdown voltage of the first junction. The invention is applied to a planar transistor, Fig. 1 (not shown), in which a P-type base region (2) and an annular P-type guard ring (4) are diffused into an N type collector layer (1) overlying an N<SP>+</SP> layer (5), and an N-type emitter region (3) is diffused into the base region (2). The guard ring may extend deeper into the collector region than does the base region and this may be achieved in the embodiment illustrated in Figs. 3 to 7 (not shown), by first diffusing-in the guard ring and then diffusing-in the base and emitter regions. In an alternative embodiment, Figs. 8 to 11 (not shown), and Fig. 12, the surface of layer 1 is covered with an oxide mask 11 which exposes the sites of the base region 2 and the guard ring 4. The surface is then covered with a photolacquer (16) which is photo-etched to expose the site of guard ring 4. An annular groove (17) is then etched in layer 1, the lacquer is removed and base region 2 and guard ring 4 are diffused-in. The surface is remasked and the emitter region is diffused-in and contacts 7, 8, 6 are applied to the emitter, base and collector regions. A plurality of devices can be manufactured in a single wafer of semi-conductor material which is then subdivided.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DEST23638A DE1273700B (en) | 1965-04-07 | 1965-04-07 | Semiconductor component |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1078547A true GB1078547A (en) | 1967-08-09 |
Family
ID=7459814
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB15561/66A Expired GB1078547A (en) | 1965-04-07 | 1966-04-07 | Semiconductor device |
Country Status (5)
Country | Link |
---|---|
BE (1) | BE679171A (en) |
DE (1) | DE1273700B (en) |
ES (1) | ES325287A1 (en) |
GB (1) | GB1078547A (en) |
NL (1) | NL6604583A (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL6904543A (en) * | 1969-03-25 | 1970-09-29 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1905127A1 (en) * | 1968-03-18 | 1969-10-16 | Schwermaschb Nobas Nordhausen | Hydraulic wheel hub drive for heavy duty vehicles |
-
1965
- 1965-04-07 DE DEST23638A patent/DE1273700B/en active Pending
-
1966
- 1966-04-05 NL NL6604583A patent/NL6604583A/xx unknown
- 1966-04-06 ES ES0325287A patent/ES325287A1/en not_active Expired
- 1966-04-07 GB GB15561/66A patent/GB1078547A/en not_active Expired
- 1966-04-07 BE BE679171A patent/BE679171A/xx unknown
Also Published As
Publication number | Publication date |
---|---|
NL6604583A (en) | 1966-10-10 |
ES325287A1 (en) | 1967-04-01 |
DE1273700B (en) | 1968-07-25 |
BE679171A (en) | 1966-10-17 |
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