GB1078547A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
GB1078547A
GB1078547A GB15561/66A GB1556166A GB1078547A GB 1078547 A GB1078547 A GB 1078547A GB 15561/66 A GB15561/66 A GB 15561/66A GB 1556166 A GB1556166 A GB 1556166A GB 1078547 A GB1078547 A GB 1078547A
Authority
GB
United Kingdom
Prior art keywords
guard ring
region
diffused
base
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB15561/66A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Micronas GmbH
ITT Inc
Original Assignee
Deutsche ITT Industries GmbH
ITT Industries Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Deutsche ITT Industries GmbH, ITT Industries Inc filed Critical Deutsche ITT Industries GmbH
Publication of GB1078547A publication Critical patent/GB1078547A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23GCLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G1/00Cleaning or pickling metallic material with solutions or molten salts
    • C23G1/14Cleaning or pickling metallic material with solutions or molten salts with alkaline solutions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Ceramic Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Bipolar Transistors (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

1,078,547. Semi-conductor devices. ITT INDUSTRIES Inc. April 7, 1966 [April 7, 1965], No. 15561/66. Heading H1K. The breakdown voltage of a reverse biased PN junction is increased by surrounding it with a surface " guard ring " region defining a second PN junction, the spacing between the junctions being such that in use their space charge regions merge at a voltage less than the breakdown voltage of the first junction. The invention is applied to a planar transistor, Fig. 1 (not shown), in which a P-type base region (2) and an annular P-type guard ring (4) are diffused into an N type collector layer (1) overlying an N<SP>+</SP> layer (5), and an N-type emitter region (3) is diffused into the base region (2). The guard ring may extend deeper into the collector region than does the base region and this may be achieved in the embodiment illustrated in Figs. 3 to 7 (not shown), by first diffusing-in the guard ring and then diffusing-in the base and emitter regions. In an alternative embodiment, Figs. 8 to 11 (not shown), and Fig. 12, the surface of layer 1 is covered with an oxide mask 11 which exposes the sites of the base region 2 and the guard ring 4. The surface is then covered with a photolacquer (16) which is photo-etched to expose the site of guard ring 4. An annular groove (17) is then etched in layer 1, the lacquer is removed and base region 2 and guard ring 4 are diffused-in. The surface is remasked and the emitter region is diffused-in and contacts 7, 8, 6 are applied to the emitter, base and collector regions. A plurality of devices can be manufactured in a single wafer of semi-conductor material which is then subdivided.
GB15561/66A 1965-04-07 1966-04-07 Semiconductor device Expired GB1078547A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DEST23638A DE1273700B (en) 1965-04-07 1965-04-07 Semiconductor component

Publications (1)

Publication Number Publication Date
GB1078547A true GB1078547A (en) 1967-08-09

Family

ID=7459814

Family Applications (1)

Application Number Title Priority Date Filing Date
GB15561/66A Expired GB1078547A (en) 1965-04-07 1966-04-07 Semiconductor device

Country Status (5)

Country Link
BE (1) BE679171A (en)
DE (1) DE1273700B (en)
ES (1) ES325287A1 (en)
GB (1) GB1078547A (en)
NL (1) NL6604583A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6904543A (en) * 1969-03-25 1970-09-29

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1905127A1 (en) * 1968-03-18 1969-10-16 Schwermaschb Nobas Nordhausen Hydraulic wheel hub drive for heavy duty vehicles

Also Published As

Publication number Publication date
NL6604583A (en) 1966-10-10
ES325287A1 (en) 1967-04-01
DE1273700B (en) 1968-07-25
BE679171A (en) 1966-10-17

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