GB1091656A - Improvements in or relating to semiconductor devices - Google Patents

Improvements in or relating to semiconductor devices

Info

Publication number
GB1091656A
GB1091656A GB40876/66A GB4087666A GB1091656A GB 1091656 A GB1091656 A GB 1091656A GB 40876/66 A GB40876/66 A GB 40876/66A GB 4087666 A GB4087666 A GB 4087666A GB 1091656 A GB1091656 A GB 1091656A
Authority
GB
United Kingdom
Prior art keywords
region
type
produce
wafer
inset
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB40876/66A
Inventor
Carl Peter Sandbank
Thomas Peter Cauge
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB1887163A external-priority patent/GB1013424A/en
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Priority to GB40876/66A priority Critical patent/GB1091656A/en
Priority to DE19671589696 priority patent/DE1589696C3/en
Priority to NL6712550A priority patent/NL6712550A/xx
Priority to BE703777D priority patent/BE703777A/xx
Publication of GB1091656A publication Critical patent/GB1091656A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
  • Cosmetics (AREA)

Abstract

1,091,656. Semi-conductor devices. STANDARD TELEPHONES & CABLES Ltd. Sept. 13, 1966, No. 40876/66. Addition to 1,013,424. Heading H1K. The invention of the main patent, which relates to bevelling the surface of a body on the higher resistivity side of a PN junction to increase the breakdown voltage, is applied to a junction transistor the collector region being of higher resistivity than the base region which has a greater thickness at the periphery of the body than below the emitter region which is inset in the base region. The transistor is produced by diffusing an N<SP>+</SP> type region into the lower face of a high resistivity N-type silicon wafer and etching or air abrading the top face to form a mesa, Fig. 10 (not shown). Gallium is diffused into the shaped surface to produce a thick P<SP>+</SP> type layer, Fig. 11 (not shown). This surface is then lapped flat to produce a wafer having a thick annular P<SP>+</SP> type region inside which the original N-type region is exposed, Fig. 12 (not shown), and gallium and phosphorus are diffused into this exposed region using an oxide masking technique to produce a P-type base region with an inset N<SP>+</SP> type emitter region, Fig. 13 (not shown). The edge of the wafer is then bevelled by air abrasion, Fig. 14. The N <SP>+</SP> type collector layer may be produced by epitaxy or may be omitted.
GB40876/66A 1963-05-13 1966-09-13 Improvements in or relating to semiconductor devices Expired GB1091656A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
GB40876/66A GB1091656A (en) 1963-05-13 1966-09-13 Improvements in or relating to semiconductor devices
DE19671589696 DE1589696C3 (en) 1966-09-13 1967-09-06 Semiconductor component, in particular a flat transistor
NL6712550A NL6712550A (en) 1966-09-13 1967-09-13
BE703777D BE703777A (en) 1966-09-13 1967-09-13

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB1887163A GB1013424A (en) 1963-05-13 1963-05-13 Improvements in or relating to semiconductor devices
GB40876/66A GB1091656A (en) 1963-05-13 1966-09-13 Improvements in or relating to semiconductor devices

Publications (1)

Publication Number Publication Date
GB1091656A true GB1091656A (en) 1967-11-22

Family

ID=10417074

Family Applications (1)

Application Number Title Priority Date Filing Date
GB40876/66A Expired GB1091656A (en) 1963-05-13 1966-09-13 Improvements in or relating to semiconductor devices

Country Status (4)

Country Link
BE (1) BE703777A (en)
DE (1) DE1589696C3 (en)
GB (1) GB1091656A (en)
NL (1) NL6712550A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3987476A (en) * 1974-01-18 1976-10-19 Bbc Brown Boveri & Company Limited Thyristor
US5132769A (en) * 1988-06-20 1992-07-21 Kabushiki Kaisha Meidensha Semiconductor device with high withstand voltage

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3987476A (en) * 1974-01-18 1976-10-19 Bbc Brown Boveri & Company Limited Thyristor
US5132769A (en) * 1988-06-20 1992-07-21 Kabushiki Kaisha Meidensha Semiconductor device with high withstand voltage

Also Published As

Publication number Publication date
DE1589696C3 (en) 1975-03-27
NL6712550A (en) 1968-03-14
DE1589696B2 (en) 1974-08-15
BE703777A (en) 1968-03-13
DE1589696A1 (en) 1970-07-09

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