GB1028956A - Semiconductor devices - Google Patents
Semiconductor devicesInfo
- Publication number
- GB1028956A GB1028956A GB428965A GB428965A GB1028956A GB 1028956 A GB1028956 A GB 1028956A GB 428965 A GB428965 A GB 428965A GB 428965 A GB428965 A GB 428965A GB 1028956 A GB1028956 A GB 1028956A
- Authority
- GB
- United Kingdom
- Prior art keywords
- region
- type
- layer
- produced
- epitaxial
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000000151 deposition Methods 0.000 abstract 3
- 239000012535 impurity Substances 0.000 abstract 3
- 238000009792 diffusion process Methods 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 230000015556 catabolic process Effects 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/761—PN junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Thyristors (AREA)
- Bipolar Transistors (AREA)
- Element Separation (AREA)
Abstract
1,028,956. Semi-conductor devices. STANDARD TELEPHONES & CABLES Ltd. Feb. 1, 1965, No. 4289/65. Heading H1K. The surface breakdown voltage of a PN junction is increased by increasing the width of the depletion layer at the surface by surrounding the region enclosed by the junction with a region of the same conductivity type as the enclosed region but having a lower impurity concentration than the other region. A transistor, Fig. 2d, is produced by depositing on an N+-type silicon substrate 11 an epitaxial N-type layer 12 and an epitaxial P-type layer 13 having a lower impurity concentration than layer 12. The surface of the wafer is masked by oxidizing and using a photolithographic technique and boron is diffused in to produce P-type base region 15. A second diffusion process using phosphorus produces N-type regions 16 and 17. Region 16 is the emitter region and region 17 isolates a portion of P-type layer 13 surrounding P-type region 15. Aluminium contacts 18 are applied to the base and emitter regions 15 and 16. A diode may be produced by omitting emitter region 16. An SCR, Fig. 3 (not shown), is produced by depositing on a low resistivity substrate 21 of one conductivity type an epitaxial layer 22 of the opposite type and an epitaxial layer 23 of the one type but having a lower impurity concentration than layer 22. An annular region 24 and a base region 25, both of the one type, are diffused into the wafer and followed by the simultaneous diffusion of cathode region 27 and isolating region 26, both of the opposite type. Certain of the diffused regions in any of the embodiments may alternatively be produced by etching a recess and epitaxially depositing semi-conductor material in this recess.
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB428965A GB1028956A (en) | 1965-02-01 | 1965-02-01 | Semiconductor devices |
| DE19661564109 DE1564109A1 (en) | 1965-02-01 | 1966-01-21 | Method for manufacturing a semiconductor device |
| CH121866A CH490735A (en) | 1965-02-01 | 1966-01-28 | Method for manufacturing a semiconductor device |
| NL6601230A NL6601230A (en) | 1965-02-01 | 1966-01-31 | |
| BE675855D BE675855A (en) | 1965-02-01 | 1966-02-01 | |
| FR47963A FR1466785A (en) | 1965-02-01 | 1966-02-01 | Improvements in semiconductor manufacturing methods |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB428965A GB1028956A (en) | 1965-02-01 | 1965-02-01 | Semiconductor devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1028956A true GB1028956A (en) | 1966-05-11 |
Family
ID=9774342
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB428965A Expired GB1028956A (en) | 1965-02-01 | 1965-02-01 | Semiconductor devices |
Country Status (5)
| Country | Link |
|---|---|
| BE (1) | BE675855A (en) |
| CH (1) | CH490735A (en) |
| DE (1) | DE1564109A1 (en) |
| GB (1) | GB1028956A (en) |
| NL (1) | NL6601230A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114914325A (en) * | 2022-07-18 | 2022-08-16 | 西安电子科技大学 | Multi-junction near-infrared single-photon avalanche diode and preparation method thereof |
-
1965
- 1965-02-01 GB GB428965A patent/GB1028956A/en not_active Expired
-
1966
- 1966-01-21 DE DE19661564109 patent/DE1564109A1/en active Pending
- 1966-01-28 CH CH121866A patent/CH490735A/en not_active IP Right Cessation
- 1966-01-31 NL NL6601230A patent/NL6601230A/xx unknown
- 1966-02-01 BE BE675855D patent/BE675855A/xx unknown
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114914325A (en) * | 2022-07-18 | 2022-08-16 | 西安电子科技大学 | Multi-junction near-infrared single-photon avalanche diode and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CH490735A (en) | 1970-05-15 |
| BE675855A (en) | 1966-08-01 |
| NL6601230A (en) | 1966-08-02 |
| DE1564109A1 (en) | 1969-12-18 |
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