GB1271896A - Semiconductor rectifying junction device - Google Patents
Semiconductor rectifying junction deviceInfo
- Publication number
- GB1271896A GB1271896A GB2648870A GB2648870A GB1271896A GB 1271896 A GB1271896 A GB 1271896A GB 2648870 A GB2648870 A GB 2648870A GB 2648870 A GB2648870 A GB 2648870A GB 1271896 A GB1271896 A GB 1271896A
- Authority
- GB
- United Kingdom
- Prior art keywords
- region
- junction
- portions
- type
- diffusion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000002019 doping agent Substances 0.000 abstract 5
- 238000009792 diffusion process Methods 0.000 abstract 3
- 229910052582 BN Inorganic materials 0.000 abstract 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 abstract 1
- 238000002955 isolation Methods 0.000 abstract 1
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/866—Zener diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Bipolar Integrated Circuits (AREA)
- Element Separation (AREA)
- Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
1,271,896. Semi-conductor devices. RCA CORPORATION. 2 June, 1970 [10 June, 1969], No. 26488/70. Heading H1K. A Zener diode in an integrated circuit comprises a first p type region formed of two portions, one of which 28 is of high dopant concentration while the other 30 is of lower dopant concentration, and a second n + type region 32 formed so as to define a pn junction with both portions 28, 30 of the first region. The part 36 of the junction defined by the lower dopant concentration portion 30 of the first region is significantly deeper than the part 34 defined by the high concentration portion 28, and an electrical contact 38 for the second region 32 is situated only above the deeper part 36 of the junction. In the Si device described the portions 28, 30 are formed by diffusion from boron nitride into an n type island 24 defined in an epitaxial layer 14 on a p type substrate 12 by p<SP>+</SP> isolation walls, the different depths and dopant concentrations being obtained by control of the diffusion temperature. A single diffusion from POCl 3 defines the n+ type region 32, the two junction depths being determined by the different dopant concentrations in the first region 28/30. Alloyed Al electrodes 38, 40 are finally applied as shown.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US83188369A | 1969-06-10 | 1969-06-10 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1271896A true GB1271896A (en) | 1972-04-26 |
Family
ID=25260092
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB2648870A Expired GB1271896A (en) | 1969-06-10 | 1970-06-02 | Semiconductor rectifying junction device |
Country Status (9)
| Country | Link |
|---|---|
| BE (1) | BE751635A (en) |
| DE (1) | DE2028632C3 (en) |
| ES (2) | ES380358A1 (en) |
| FR (1) | FR2045944B1 (en) |
| GB (1) | GB1271896A (en) |
| MY (1) | MY7300409A (en) |
| NL (1) | NL170068C (en) |
| SE (1) | SE361555B (en) |
| YU (1) | YU36240B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2130792A (en) * | 1982-11-12 | 1984-06-06 | Burr Brown Res Corp | Integrated circuit subsurface breakdown diode structure and process |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5967670A (en) * | 1982-10-12 | 1984-04-17 | Toshiba Corp | Semiconductor device |
| IT1221019B (en) * | 1985-04-01 | 1990-06-21 | Ates Componenti Elettron | INTEGRATED ELECTRONIC DEVICE FOR THE CONTROL OF INDUCTIVE LOADS, WITH RECIRCULATION ELEMENT |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3305913A (en) * | 1964-09-11 | 1967-02-28 | Northern Electric Co | Method for making a semiconductor device by diffusing impurities through spaced-apart holes in a non-conducting coating to form an overlapped diffused region by means oftransverse diffusion underneath the coating |
| FR1529360A (en) * | 1966-10-05 | 1968-06-14 | Rca Corp | Semiconductor devices |
| FR1559607A (en) * | 1967-06-30 | 1969-03-14 | ||
| FR1557080A (en) * | 1967-12-14 | 1969-02-14 |
-
1970
- 1970-02-25 SE SE242770A patent/SE361555B/xx unknown
- 1970-04-14 FR FR7013456A patent/FR2045944B1/fr not_active Expired
- 1970-06-02 GB GB2648870A patent/GB1271896A/en not_active Expired
- 1970-06-03 ES ES380358A patent/ES380358A1/en not_active Expired
- 1970-06-08 BE BE751635D patent/BE751635A/en unknown
- 1970-06-09 YU YU147470A patent/YU36240B/en unknown
- 1970-06-09 NL NL7008349A patent/NL170068C/en not_active IP Right Cessation
- 1970-06-10 DE DE19702028632 patent/DE2028632C3/en not_active Expired
-
1972
- 1972-12-28 ES ES410121A patent/ES410121A1/en not_active Expired
-
1973
- 1973-12-30 MY MY7300409A patent/MY7300409A/en unknown
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2130792A (en) * | 1982-11-12 | 1984-06-06 | Burr Brown Res Corp | Integrated circuit subsurface breakdown diode structure and process |
Also Published As
| Publication number | Publication date |
|---|---|
| BE751635A (en) | 1970-11-16 |
| NL170068C (en) | 1982-09-16 |
| SE361555B (en) | 1973-11-05 |
| DE2028632A1 (en) | 1970-12-17 |
| FR2045944A1 (en) | 1971-03-05 |
| MY7300409A (en) | 1973-12-31 |
| NL7008349A (en) | 1970-12-14 |
| DE2028632B2 (en) | 1981-04-16 |
| DE2028632C3 (en) | 1982-01-21 |
| NL170068B (en) | 1982-04-16 |
| ES410121A1 (en) | 1976-01-01 |
| YU147470A (en) | 1981-04-30 |
| YU36240B (en) | 1982-02-25 |
| ES380358A1 (en) | 1973-04-16 |
| FR2045944B1 (en) | 1974-02-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PE20 | Patent expired after termination of 20 years |