ES380358A1 - Semiconductor rectifying junction device - Google Patents

Semiconductor rectifying junction device

Info

Publication number
ES380358A1
ES380358A1 ES380358A ES380358A ES380358A1 ES 380358 A1 ES380358 A1 ES 380358A1 ES 380358 A ES380358 A ES 380358A ES 380358 A ES380358 A ES 380358A ES 380358 A1 ES380358 A1 ES 380358A1
Authority
ES
Spain
Prior art keywords
region
junction
portions
type
diffusion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES380358A
Other languages
Spanish (es)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of ES380358A1 publication Critical patent/ES380358A1/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/866—Zener diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Element Separation (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

A Zener diode in an integrated circuit comprises a first p type region formed of two portions, one of which 28 is of high dopant concentration while the other 30 is of lower dopant concentration, and a second n + type region 32 formed so as to define a pn junction with both portions 28, 30 of the first region. The part 36 of the junction defined by the lower dopant concentration portion 30 of the first region is significantly deeper than the part 34 defined by the high concentration portion 28, and an electrical contact 38 for the second region 32 is situated only above the deeper part 36 of the junction. In the Si device described the portions 28, 30 are formed by diffusion from boron nitride into an n type island 24 defined in an epitaxial layer 14 on a p type substrate 12 by p+ isolation walls, the different depths and dopant concentrations being obtained by control of the diffusion temperature. A single diffusion from POCl 3 defines the n+ type region 32, the two junction depths being determined by the different dopant concentrations in the first region 28/30. Alloyed Al electrodes 38, 40 are finally applied as shown.
ES380358A 1969-06-10 1970-06-03 Semiconductor rectifying junction device Expired ES380358A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US83188369A 1969-06-10 1969-06-10

Publications (1)

Publication Number Publication Date
ES380358A1 true ES380358A1 (en) 1973-04-16

Family

ID=25260092

Family Applications (2)

Application Number Title Priority Date Filing Date
ES380358A Expired ES380358A1 (en) 1969-06-10 1970-06-03 Semiconductor rectifying junction device
ES410121A Expired ES410121A1 (en) 1969-06-10 1972-12-28 Semiconductor rectifying junction device

Family Applications After (1)

Application Number Title Priority Date Filing Date
ES410121A Expired ES410121A1 (en) 1969-06-10 1972-12-28 Semiconductor rectifying junction device

Country Status (9)

Country Link
BE (1) BE751635A (en)
DE (1) DE2028632C3 (en)
ES (2) ES380358A1 (en)
FR (1) FR2045944B1 (en)
GB (1) GB1271896A (en)
MY (1) MY7300409A (en)
NL (1) NL170068C (en)
SE (1) SE361555B (en)
YU (1) YU36240B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5967670A (en) * 1982-10-12 1984-04-17 Toshiba Corp Semiconductor device
JPS5988871A (en) * 1982-11-12 1984-05-22 バ−・ブラウン・コ−ポレ−ション High stabilized low voltage integrated circuit surface breakdown diode structure and method of producing same
IT1221019B (en) * 1985-04-01 1990-06-21 Ates Componenti Elettron INTEGRATED ELECTRONIC DEVICE FOR THE CONTROL OF INDUCTIVE LOADS, WITH RECIRCULATION ELEMENT

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3305913A (en) * 1964-09-11 1967-02-28 Northern Electric Co Method for making a semiconductor device by diffusing impurities through spaced-apart holes in a non-conducting coating to form an overlapped diffused region by means oftransverse diffusion underneath the coating
FR1529360A (en) * 1966-10-05 1968-06-14 Rca Corp Semiconductor devices
FR1559607A (en) * 1967-06-30 1969-03-14
FR1557080A (en) * 1967-12-14 1969-02-14

Also Published As

Publication number Publication date
NL170068B (en) 1982-04-16
SE361555B (en) 1973-11-05
YU147470A (en) 1981-04-30
GB1271896A (en) 1972-04-26
FR2045944A1 (en) 1971-03-05
BE751635A (en) 1970-11-16
DE2028632B2 (en) 1981-04-16
ES410121A1 (en) 1976-01-01
NL7008349A (en) 1970-12-14
FR2045944B1 (en) 1974-02-01
NL170068C (en) 1982-09-16
MY7300409A (en) 1973-12-31
YU36240B (en) 1982-02-25
DE2028632A1 (en) 1970-12-17
DE2028632C3 (en) 1982-01-21

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