NL170068C - METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE WHICH WITHIN AN AREA OF A SEMICONDUCTOR BODY CONTIGUOUS FIRST FIELD WITH THE GUIDANCE TYPE OF SEMICONDUCTOR BODY opposite conductivity type, comprising a first AREA HIGH MAXIMUM OF impurity concentration and leaving an adjacent second AREA WITH A SUBSTANTIALLY LOWER MAXIMUM VALUE OF THE DOPER CONCENTRATION A SECOND AREA OF THE CONDUCTIVE TYPE OF THE SEMICONDUCTOR BODY IS FORMED. - Google Patents
METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE WHICH WITHIN AN AREA OF A SEMICONDUCTOR BODY CONTIGUOUS FIRST FIELD WITH THE GUIDANCE TYPE OF SEMICONDUCTOR BODY opposite conductivity type, comprising a first AREA HIGH MAXIMUM OF impurity concentration and leaving an adjacent second AREA WITH A SUBSTANTIALLY LOWER MAXIMUM VALUE OF THE DOPER CONCENTRATION A SECOND AREA OF THE CONDUCTIVE TYPE OF THE SEMICONDUCTOR BODY IS FORMED.Info
- Publication number
- NL170068C NL170068C NL7008349A NL7008349A NL170068C NL 170068 C NL170068 C NL 170068C NL 7008349 A NL7008349 A NL 7008349A NL 7008349 A NL7008349 A NL 7008349A NL 170068 C NL170068 C NL 170068C
- Authority
- NL
- Netherlands
- Prior art keywords
- area
- semiconductor body
- type
- concentration
- doper
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 4
- 239000012535 impurity Substances 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/866—Zener diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Bipolar Integrated Circuits (AREA)
- Element Separation (AREA)
- Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US83188369A | 1969-06-10 | 1969-06-10 |
Publications (3)
Publication Number | Publication Date |
---|---|
NL7008349A NL7008349A (en) | 1970-12-14 |
NL170068B NL170068B (en) | 1982-04-16 |
NL170068C true NL170068C (en) | 1982-09-16 |
Family
ID=25260092
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL7008349A NL170068C (en) | 1969-06-10 | 1970-06-09 | METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE WHICH WITHIN AN AREA OF A SEMICONDUCTOR BODY CONTIGUOUS FIRST FIELD WITH THE GUIDANCE TYPE OF SEMICONDUCTOR BODY opposite conductivity type, comprising a first AREA HIGH MAXIMUM OF impurity concentration and leaving an adjacent second AREA WITH A SUBSTANTIALLY LOWER MAXIMUM VALUE OF THE DOPER CONCENTRATION A SECOND AREA OF THE CONDUCTIVE TYPE OF THE SEMICONDUCTOR BODY IS FORMED. |
Country Status (9)
Country | Link |
---|---|
BE (1) | BE751635A (en) |
DE (1) | DE2028632C3 (en) |
ES (2) | ES380358A1 (en) |
FR (1) | FR2045944B1 (en) |
GB (1) | GB1271896A (en) |
MY (1) | MY7300409A (en) |
NL (1) | NL170068C (en) |
SE (1) | SE361555B (en) |
YU (1) | YU36240B (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5967670A (en) * | 1982-10-12 | 1984-04-17 | Toshiba Corp | Semiconductor device |
JPS5988871A (en) * | 1982-11-12 | 1984-05-22 | バ−・ブラウン・コ−ポレ−ション | High stabilized low voltage integrated circuit surface breakdown diode structure and method of producing same |
IT1221019B (en) * | 1985-04-01 | 1990-06-21 | Ates Componenti Elettron | INTEGRATED ELECTRONIC DEVICE FOR THE CONTROL OF INDUCTIVE LOADS, WITH RECIRCULATION ELEMENT |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3305913A (en) * | 1964-09-11 | 1967-02-28 | Northern Electric Co | Method for making a semiconductor device by diffusing impurities through spaced-apart holes in a non-conducting coating to form an overlapped diffused region by means oftransverse diffusion underneath the coating |
FR1529360A (en) * | 1966-10-05 | 1968-06-14 | Rca Corp | Semiconductor devices |
FR1559607A (en) * | 1967-06-30 | 1969-03-14 | ||
FR1557080A (en) * | 1967-12-14 | 1969-02-14 |
-
1970
- 1970-02-25 SE SE242770A patent/SE361555B/xx unknown
- 1970-04-14 FR FR7013456A patent/FR2045944B1/fr not_active Expired
- 1970-06-02 GB GB2648870A patent/GB1271896A/en not_active Expired
- 1970-06-03 ES ES380358A patent/ES380358A1/en not_active Expired
- 1970-06-08 BE BE751635D patent/BE751635A/en unknown
- 1970-06-09 NL NL7008349A patent/NL170068C/en not_active IP Right Cessation
- 1970-06-09 YU YU147470A patent/YU36240B/en unknown
- 1970-06-10 DE DE19702028632 patent/DE2028632C3/en not_active Expired
-
1972
- 1972-12-28 ES ES410121A patent/ES410121A1/en not_active Expired
-
1973
- 1973-12-30 MY MY7300409A patent/MY7300409A/en unknown
Also Published As
Publication number | Publication date |
---|---|
YU147470A (en) | 1981-04-30 |
FR2045944A1 (en) | 1971-03-05 |
MY7300409A (en) | 1973-12-31 |
DE2028632A1 (en) | 1970-12-17 |
GB1271896A (en) | 1972-04-26 |
SE361555B (en) | 1973-11-05 |
ES410121A1 (en) | 1976-01-01 |
NL170068B (en) | 1982-04-16 |
FR2045944B1 (en) | 1974-02-01 |
ES380358A1 (en) | 1973-04-16 |
YU36240B (en) | 1982-02-25 |
BE751635A (en) | 1970-11-16 |
DE2028632B2 (en) | 1981-04-16 |
NL7008349A (en) | 1970-12-14 |
DE2028632C3 (en) | 1982-01-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
V4 | Lapsed because of reaching the maxim lifetime of a patent |