NL174304C - METHOD FOR MANUFACTURING AN INTEGRATED SEMICONDUCTOR CIRCUIT COMPOSED OF COMPLEMENTARY FIELD EFFECT TRANSISTORS WITH AN INSULATED CONTROL ELECTRODE. - Google Patents

METHOD FOR MANUFACTURING AN INTEGRATED SEMICONDUCTOR CIRCUIT COMPOSED OF COMPLEMENTARY FIELD EFFECT TRANSISTORS WITH AN INSULATED CONTROL ELECTRODE.

Info

Publication number
NL174304C
NL174304C NL7709870A NL7709870A NL174304C NL 174304 C NL174304 C NL 174304C NL 7709870 A NL7709870 A NL 7709870A NL 7709870 A NL7709870 A NL 7709870A NL 174304 C NL174304 C NL 174304C
Authority
NL
Netherlands
Prior art keywords
manufacturing
field effect
control electrode
effect transistors
semiconductor circuit
Prior art date
Application number
NL7709870A
Other languages
Dutch (nl)
Other versions
NL174304B (en
NL7709870A (en
Original Assignee
Sanyo Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co filed Critical Sanyo Electric Co
Publication of NL7709870A publication Critical patent/NL7709870A/en
Publication of NL174304B publication Critical patent/NL174304B/en
Application granted granted Critical
Publication of NL174304C publication Critical patent/NL174304C/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0927—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising a P-well only in the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H01L21/823807—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
NL7709870A 1976-09-08 1977-09-08 METHOD FOR MANUFACTURING AN INTEGRATED SEMICONDUCTOR CIRCUIT COMPOSED OF COMPLEMENTARY FIELD EFFECT TRANSISTORS WITH AN INSULATED CONTROL ELECTRODE. NL174304C (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10860276A JPS5333074A (en) 1976-09-08 1976-09-08 Production of complementary type insulated gate field effect semiconductor device

Publications (3)

Publication Number Publication Date
NL7709870A NL7709870A (en) 1978-03-10
NL174304B NL174304B (en) 1983-12-16
NL174304C true NL174304C (en) 1984-05-16

Family

ID=14488949

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7709870A NL174304C (en) 1976-09-08 1977-09-08 METHOD FOR MANUFACTURING AN INTEGRATED SEMICONDUCTOR CIRCUIT COMPOSED OF COMPLEMENTARY FIELD EFFECT TRANSISTORS WITH AN INSULATED CONTROL ELECTRODE.

Country Status (3)

Country Link
JP (1) JPS5333074A (en)
DE (1) DE2740549C2 (en)
NL (1) NL174304C (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56118372A (en) * 1980-02-22 1981-09-17 Nec Corp Semiconductor device
DE3133841A1 (en) * 1981-08-27 1983-03-17 Siemens AG, 1000 Berlin und 8000 München METHOD FOR PRODUCING HIGHLY INTEGRATED COMPLEMENTARY MOS FIELD EFFECT TRANSISTOR CIRCUITS
US4462151A (en) * 1982-12-03 1984-07-31 International Business Machines Corporation Method of making high density complementary transistors
EP0123384A1 (en) * 1983-02-25 1984-10-31 Western Digital Corporation Complementary insulated gate field effect integrated circuit structure and process for fabricating the structure
DE3314450A1 (en) * 1983-04-21 1984-10-25 Siemens AG, 1000 Berlin und 8000 München METHOD FOR PRODUCING HIGHLY INTEGRATED COMPLEMENTARY MOS FIELD EFFECT TRANSISTOR CIRCUITS
DE3318213A1 (en) * 1983-05-19 1984-11-22 Deutsche Itt Industries Gmbh, 7800 Freiburg METHOD FOR PRODUCING AN INTEGRATED INSULATION LAYER FIELD EFFECT TRANSISTOR WITH CONTACTS FOR THE GATE ELECTRODE SELF-ALIGNED
DE3330851A1 (en) * 1983-08-26 1985-03-14 Siemens AG, 1000 Berlin und 8000 München METHOD FOR PRODUCING HIGHLY INTEGRATED COMPLEMENTARY MOS FIELD EFFECT TRANSISTOR CIRCUITS
DE3340560A1 (en) * 1983-11-09 1985-05-15 Siemens AG, 1000 Berlin und 8000 München METHOD FOR THE SIMULTANEOUS PRODUCTION OF FAST SHORT-CHANNEL AND VOLTAGE-RESISTANT MOS TRANSISTORS IN VLSI CIRCUITS
JPS6187375A (en) * 1985-10-18 1986-05-02 Nec Corp Manufacture of semiconductor device
JPH03101264A (en) * 1990-05-07 1991-04-26 Nec Corp Manufacture of complementary field effect transistor

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7017066A (en) * 1970-11-21 1972-05-24
JPS51147184A (en) * 1975-06-11 1976-12-17 Toshiba Corp Method of mawufacturing of mosic circuit device

Also Published As

Publication number Publication date
JPS5333074A (en) 1978-03-28
NL174304B (en) 1983-12-16
DE2740549A1 (en) 1978-03-09
NL7709870A (en) 1978-03-10
DE2740549C2 (en) 1986-02-20

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Legal Events

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SNR Assignments of patents or rights arising from examined patent applications

Owner name: SANYO ELECTRIC CO., LTD.

V1 Lapsed because of non-payment of the annual fee