NL7008349A - - Google Patents

Info

Publication number
NL7008349A
NL7008349A NL7008349A NL7008349A NL7008349A NL 7008349 A NL7008349 A NL 7008349A NL 7008349 A NL7008349 A NL 7008349A NL 7008349 A NL7008349 A NL 7008349A NL 7008349 A NL7008349 A NL 7008349A
Authority
NL
Netherlands
Application number
NL7008349A
Other versions
NL170068C (en
NL170068B (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL7008349A publication Critical patent/NL7008349A/xx
Publication of NL170068B publication Critical patent/NL170068B/en
Application granted granted Critical
Publication of NL170068C publication Critical patent/NL170068C/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/866—Zener diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Element Separation (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
NL7008349A 1969-06-10 1970-06-09 METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE WHICH WITHIN AN AREA OF A SEMICONDUCTOR BODY CONTIGUOUS FIRST FIELD WITH THE GUIDANCE TYPE OF SEMICONDUCTOR BODY opposite conductivity type, comprising a first AREA HIGH MAXIMUM OF impurity concentration and leaving an adjacent second AREA WITH A SUBSTANTIALLY LOWER MAXIMUM VALUE OF THE DOPER CONCENTRATION A SECOND AREA OF THE CONDUCTIVE TYPE OF THE SEMICONDUCTOR BODY IS FORMED. NL170068C (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US83188369A 1969-06-10 1969-06-10

Publications (3)

Publication Number Publication Date
NL7008349A true NL7008349A (en) 1970-12-14
NL170068B NL170068B (en) 1982-04-16
NL170068C NL170068C (en) 1982-09-16

Family

ID=25260092

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7008349A NL170068C (en) 1969-06-10 1970-06-09 METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE WHICH WITHIN AN AREA OF A SEMICONDUCTOR BODY CONTIGUOUS FIRST FIELD WITH THE GUIDANCE TYPE OF SEMICONDUCTOR BODY opposite conductivity type, comprising a first AREA HIGH MAXIMUM OF impurity concentration and leaving an adjacent second AREA WITH A SUBSTANTIALLY LOWER MAXIMUM VALUE OF THE DOPER CONCENTRATION A SECOND AREA OF THE CONDUCTIVE TYPE OF THE SEMICONDUCTOR BODY IS FORMED.

Country Status (9)

Country Link
BE (1) BE751635A (en)
DE (1) DE2028632C3 (en)
ES (2) ES380358A1 (en)
FR (1) FR2045944B1 (en)
GB (1) GB1271896A (en)
MY (1) MY7300409A (en)
NL (1) NL170068C (en)
SE (1) SE361555B (en)
YU (1) YU36240B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5967670A (en) * 1982-10-12 1984-04-17 Toshiba Corp Semiconductor device
JPS5988871A (en) * 1982-11-12 1984-05-22 バ−・ブラウン・コ−ポレ−ション High stabilized low voltage integrated circuit surface breakdown diode structure and method of producing same
IT1221019B (en) * 1985-04-01 1990-06-21 Ates Componenti Elettron INTEGRATED ELECTRONIC DEVICE FOR THE CONTROL OF INDUCTIVE LOADS, WITH RECIRCULATION ELEMENT

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3305913A (en) * 1964-09-11 1967-02-28 Northern Electric Co Method for making a semiconductor device by diffusing impurities through spaced-apart holes in a non-conducting coating to form an overlapped diffused region by means oftransverse diffusion underneath the coating
FR1529360A (en) * 1966-10-05 1968-06-14 Rca Corp Semiconductor devices
FR1559607A (en) * 1967-06-30 1969-03-14
FR1557080A (en) * 1967-12-14 1969-02-14

Also Published As

Publication number Publication date
YU147470A (en) 1981-04-30
FR2045944A1 (en) 1971-03-05
MY7300409A (en) 1973-12-31
DE2028632A1 (en) 1970-12-17
GB1271896A (en) 1972-04-26
SE361555B (en) 1973-11-05
ES410121A1 (en) 1976-01-01
NL170068C (en) 1982-09-16
NL170068B (en) 1982-04-16
FR2045944B1 (en) 1974-02-01
ES380358A1 (en) 1973-04-16
YU36240B (en) 1982-02-25
BE751635A (en) 1970-11-16
DE2028632B2 (en) 1981-04-16
DE2028632C3 (en) 1982-01-21

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Legal Events

Date Code Title Description
V4 Lapsed because of reaching the maxim lifetime of a patent