GB1288029A - - Google Patents

Info

Publication number
GB1288029A
GB1288029A GB4816370A GB4816370A GB1288029A GB 1288029 A GB1288029 A GB 1288029A GB 4816370 A GB4816370 A GB 4816370A GB 4816370 A GB4816370 A GB 4816370A GB 1288029 A GB1288029 A GB 1288029A
Authority
GB
United Kingdom
Prior art keywords
arsenic
phosphorus
boron
march
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4816370A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP1037670A external-priority patent/JPS504310B1/ja
Priority claimed from JP1710370A external-priority patent/JPS505908B1/ja
Priority claimed from JP2082670A external-priority patent/JPS4940111B1/ja
Priority claimed from JP2562770A external-priority patent/JPS501871B1/ja
Application filed filed Critical
Publication of GB1288029A publication Critical patent/GB1288029A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H01L21/2255—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)

Abstract

1288029 Semi-conductor devices TOKYO SHIBAURA ELECTRIC CO Ltd 9 Oct 1970 [7 Feb 1970 2 March 1970 13 March 1970 28 March 1970] 48163/70 Heading H1K A surface region of a silicon body is simultaneously diffused with arsenic and phosphorus or boron. At the surface of the region the ratio of the number of atoms of phosphorus or boron to that of arsenic is 100 : 3-40. The presence of arsenic reduces the number of lattice defects and precipitates formed in the region particularly if the semi-conductor substrate includes less than 1000 dislocations/c.c. and/or has its surface orientated in a 111 crystallographic plane. In described examples the arsenic and boron or phosphorus are diffused in simultaneously as from a suitably doped silicon oxide layer formed by oxidation of silane, and overlying an aperture in a silica mask. Such a process may be used to form a diode from an N-type Si body. To form a PNP transistor a P-type layer is first epitaxially grown on a P + substrate, phosphorus and arsenic doped silica deposited and then apertured at the emitter site and a second layer of boron and arsenic doped oxide deposited overall. The resulting wafer is then heated to cause diffusion. Methods of forming a P + NN + diode, a controlled rectifier, and a planar NPN transistor are also described, the last-mentioned involving diffusion from boron nitride to form the base zone followed by an emitter diffusion of phosphorus and arsenic as described above, which causes no appreciable "emitter dip".
GB4816370A 1970-02-07 1970-10-09 Expired GB1288029A (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP1037670A JPS504310B1 (en) 1970-02-07 1970-02-07
JP1710370A JPS505908B1 (en) 1970-03-02 1970-03-02
JP2082670A JPS4940111B1 (en) 1970-03-13 1970-03-13
JP2562770A JPS501871B1 (en) 1970-03-28 1970-03-28

Publications (1)

Publication Number Publication Date
GB1288029A true GB1288029A (en) 1972-09-06

Family

ID=27455384

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4816370A Expired GB1288029A (en) 1970-02-07 1970-10-09

Country Status (4)

Country Link
DE (1) DE2049696C3 (en)
FR (1) FR2080965B1 (en)
GB (1) GB1288029A (en)
NL (1) NL162512C (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2200249A (en) * 1984-02-02 1988-07-27 Stanford Res Inst Int Semiconductor circuit structure having dislocation-free substrate

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3821038A (en) * 1972-05-22 1974-06-28 Ibm Method for fabricating semiconductor structures with minimum crystallographic defects
FR2186734A1 (en) * 1972-05-29 1974-01-11 Radiotechnique Compelec Microwave semiconductor component production - by simultaneous multiple diffusion from doped insulation films

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB953034A (en) * 1961-07-13 1964-03-25 Clevite Corp Improvements in or relating to semiconductor devices
AT243318B (en) * 1962-09-21 1965-11-10 Siemens Ag Process for the production of high degrees of doping in semiconductor materials
US3249831A (en) * 1963-01-04 1966-05-03 Westinghouse Electric Corp Semiconductor controlled rectifiers with a p-n junction having a shallow impurity concentration gradient

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2200249A (en) * 1984-02-02 1988-07-27 Stanford Res Inst Int Semiconductor circuit structure having dislocation-free substrate
GB2200250A (en) * 1984-02-02 1988-07-27 Stanford Res Inst Int Semiconductor circuit structure having dislocation-free substrate
GB2200251A (en) * 1984-02-02 1988-07-27 Stanford Res Inst Int Semiconductor circuit structure having dislocation-free substrate

Also Published As

Publication number Publication date
DE2049696C3 (en) 1982-02-18
DE2049696A1 (en) 1971-08-26
NL162512C (en) 1980-05-16
NL162512B (en) 1979-12-17
DE2049696B2 (en) 1981-06-11
NL7014842A (en) 1971-08-10
FR2080965A1 (en) 1971-11-26
FR2080965B1 (en) 1976-05-28

Similar Documents

Publication Publication Date Title
US3226614A (en) High voltage semiconductor device
GB1306817A (en) Semiconductor devices
GB1226899A (en)
GB1046152A (en) Diode structure in semiconductor integrated circuit and method of making same
GB1250377A (en)
GB1522291A (en) Semiconductor device manufacture
GB1307546A (en) Methods of manufacturing semiconductor devices
GB1193692A (en) Process for Fabricating Integrated Circuits
GB1024359A (en) Semiconductor structures poviding both unipolar transistor and bipolar transistor functions and method of making same
GB1073551A (en) Integrated circuit comprising a diode and method of making the same
GB1277973A (en) Semiconductor device
GB1270130A (en) Improvements in and relating to methods of manufacturing semiconductor devices
GB1288029A (en)
GB1186945A (en) Improvements relating to Semiconductor Devices
GB1388926A (en) Manufacture of silicon semiconductor devices
GB1221882A (en) Method of diffusing impurities into a limited region of a semiconductor body.
GB1296562A (en)
GB1161978A (en) Semiconductor Integrated Circuit including a Bidirectional Transistor and Method of Making the Same
GB1325082A (en) Semiconductor devices
GB1271896A (en) Semiconductor rectifying junction device
GB1028485A (en) Semiconductor devices
JPS567472A (en) Semiconductor device
GB1026489A (en) Semiconductor device fabrication
GB1211117A (en) Integrated semiconductor devices
GB1210981A (en) Integrated semiconductor devices

Legal Events

Date Code Title Description
PS Patent sealed
435 Patent endorsed 'licences of right' on the date specified (sect. 35/1949)
PE20 Patent expired after termination of 20 years