GB953034A - Improvements in or relating to semiconductor devices - Google Patents

Improvements in or relating to semiconductor devices

Info

Publication number
GB953034A
GB953034A GB2382762A GB2382762A GB953034A GB 953034 A GB953034 A GB 953034A GB 2382762 A GB2382762 A GB 2382762A GB 2382762 A GB2382762 A GB 2382762A GB 953034 A GB953034 A GB 953034A
Authority
GB
United Kingdom
Prior art keywords
semi
region
atomic radius
conductor
impurities
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2382762A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Clevite Corp
Original Assignee
Clevite Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Clevite Corp filed Critical Clevite Corp
Publication of GB953034A publication Critical patent/GB953034A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)

Abstract

953,034. Semi-conductor devices. CLEVITE CORPORATION. June 20, 1962 [July 13, 1961], No. 23827/62. Drawings to Specification. Heading H1K. A method of producing a semi-conductor device which contains two regions of differing impurity concentrations comprises forming one of said regions so that it includes atoms of at least two different impurity types and causing the relative proportion of these impurity atoms to be such that the average atomic radius of the impurities and the semi-conductor material in said one region is equal to the average atomic radius of the impurities (if any) and the semi. conductor material in the other region. The method may utilize a diffusion technique for making a transistor (Fig. 5, not shown) or an epitaxial growth technique for a solar cell (Fig. 4, not shown). In an example the atomic radius of boron is stated to be 0.19 Angstrom units (A.U.) less than that of silicon while the radius for aluminium is 0.16 A.U. larger so that an N-type region may be formed in a silicon wafer by diffusing in 19 parts of Al to 16 parts of B. The proportions necessary for the elements P, Sb, Ga, In, As and Bi are also stated in the Specification.
GB2382762A 1961-07-13 1962-06-20 Improvements in or relating to semiconductor devices Expired GB953034A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12377861A 1961-07-13 1961-07-13

Publications (1)

Publication Number Publication Date
GB953034A true GB953034A (en) 1964-03-25

Family

ID=22410827

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2382762A Expired GB953034A (en) 1961-07-13 1962-06-20 Improvements in or relating to semiconductor devices

Country Status (2)

Country Link
DE (1) DE1208009B (en)
GB (1) GB953034A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1288029A (en) * 1970-02-07 1972-09-06

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2824269A (en) * 1956-01-17 1958-02-18 Bell Telephone Labor Inc Silicon translating devices and silicon alloys therefor
FR74285E (en) * 1956-05-15 1960-11-07 Siemens Ag Silicon-based semiconductor device
NL107648C (en) * 1956-05-15
DE1037015B (en) * 1956-05-21 1958-08-21 Ibm Deutschland N-type interference semiconductors for transistors or the like.

Also Published As

Publication number Publication date
DE1208009B (en) 1965-12-30

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